氮化鋁陶瓷具有高導熱、高絕緣、低介電常數和低熱膨脹係數等優異性質，因此在電子基板方面有很大的應用性，但由於氮化鋁粉體的零售價格相當貴，使氮化鋁材料難以普及。

本實驗期望以燃燒合成法(SHS) 熱處理800°C、900°C以及1000°C期能生成石墨，同時也是一導熱性能相當好的材料，來包覆氮化鋁粉體，並改善其各種性能，達到低成本的合成及應用。

首先將Scruse加入70%硝酸中，溶解後再加入氮化鋁粉體，均勻混合後兩階段烤乾，後在氬氣氣氛中熱處理，最後壓胚成形。完成後元件施以各種量測，包括：密度及收縮率、晶相、顯微結構、介電性質和導熱率……等等。

實驗結果發現，雖然密度及收縮率會隨溫度上升而增加，但其效果並不明顯。X-ray繞射結果也顯示，當碳源的添加量越多時，會有碳原子取代AlN中的氮，而使其晶格結構改變，造成XRD峰值偏移(Peak Shift)。SEM結果顯示出燒結體內有很多的孔隙，且隨溫度升高，孔隙會越明顯。在介電性質方面，發現碳的添加並無助於介電性質的提升，反倒是在添加濃度為25wt%，且燒結溫度為800°C時可得最佳之介電常數13.17，及介電損耗0.314，最後吾人以在800°C熱處理下添加前驅物濃度為35wt%所得之成品量測導熱率為1.048 W/m•K。

Great electric insulation, high thermal conductivity, low dielectric constant, and low thermal expansion coefficient make AlN a very promising material for electric applications. Due to the high cost of the material, it is hard to be popular.
In the study, we sintered the precursor-coated AlN powder at 800°C、900°C and 1000°C by SHS in order to obtain carbon-coated AlN powder for lower-cost synthesis use and further applications.
We add sucrose in the 70% nitric acid solution first, wait until it was fully dissolved, then add AlN powder in the solution. After two steps of drying, it was sintered under Ar atmosphere for 2 hours. At last, we studied the density, grain, microstructure, dielectric properties and thermal conductivity with the product.
We found that although the density and shrinkage rate increase as the sintered temperature increases, but it was not apparent. The X-ray patterns showed as we add more carbon precursor, the more carbon atom will substitute the “N” atom in the AlN crystal structure during the whole combustion process which will result in peak shift. The SEM also showed pores and defects from breaking plane of the product. For dielectric properties, we found as we increased the carbon precursor concentration, the dielectric properties didn’t get improved. We obtained the best dielectric constant 13.17 and dielectric loss 0.314 with 25wt% precursor concentration sintered at 800°C. At last, we obtained the thermal conductivity 1.048 W/m•K from the sample synthesized at 800°C. with 35wt% precursor added.

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