KTa1-xNbxO3可藉由調節組成成分x的比例而改變居禮溫度Tc (13-708K)，因此在室溫下KTa1-xNbxO3可以具有順電相立方晶系(x＜0.4) 、鐵電相正方晶系(0.4≦x≦0.57)及斜方晶系(x＞0.57)三種不同的結構，且其具有高介電常數、自發性極化、熱釋電效應、二次電光係數、及非線性光學係數的特性，為一非常有應用價值的鐵電材料。本論文主要探討以固態反應法製備摻雜Er3+之KTa1-xNbxO3(x=0.0-0.9)，分別改變其主體結構、摻雜濃度及燒結溫度，以提升Er3+發光效率，並藉由XRD、SEM、PL、RAMAN作特性之量測。在研究中發現，隨燒結溫度的提高，Er3+可以取代K+的位置而完全固溶於主體當中，當Er3+摻雜的濃度2 mol%時，為其最佳比例；且隨著Ta的比例逐漸提高，發光效率進而獲得大幅改善。

　KTN crystal is an attractive material which exhibits high dielectric constants, spontaneous polarization, pyroelectric, quadratic electrooptic effect and nonlinear optical. The Curie point (Tc) of KTN can be adjusted by the variation of Nb content. Therefore, KTN has three kinds of crystal structures which are cubic (x<0.4), tetragonal (0.4≦x≦0.57) and orthorhombic (x>0.57) at room temperature. In this paper, we investigates the luminescence properties of erbium doped Potassium tantalate niobate ceramics, which are prepared by the solid state synthesized method. In this work, we tried to raise the efficiency of luminescence by adjusting host content, concentration of erbium and sintering temperature. The experiments showed that the Er3+ ion can be dispersed in host completely by substitution for K+ ion site. In concentration study, as KTN doped with 2 mol% Er2O3 has the strongest fluorescence intensity due to Er3+ 4f energy level transitions. We also find that the fluorescence intensity increasing gradually because Ta5+ ion substitutes Nb5+ ion. The material characteristics were also analyzed by using XRD, SEM and Raman spectrometer.

[1]Shibin, L. Tao, H. Bor-Chyuan, S. Fred, S. Karine, L. Jacques, Pl Nasser, “J. Non-Crys. Solids” 263, 364 (2000)
[2]M. Okayasu, T. Takeshita, M. Yamada, O. Kogure, M. Horiguchi, M. Fjkuda, K. Oe, S. Uehara, “Elec. Lett.” 25[9], 1563 (1989)
[3]D. J. Cherng, C. Sien, “Optics Communications” 162, 219 (1999)
[4]Z. J. Chen, J. D. Minelly, Y. Gu, “Electron. Lett.” 32, 1812 (1996)
[5]J. Nilsson, P. Scheer, B. Jaskorzynska, “IEEE Photon. Technol. Lett.” 6[3], 383 (1994)
[6]N. Park, P. Wysochi, R. Pedrazzani, S. Grubb, D. D. K. Walker, “IEEE Photon. Technol. Lett.” 8[9], 1148 (1996)
[7]A. J. Tae, J. M. Yong, K. K. Hon, “Optics Communications”197,121(2001)
[8]Z. Mierczyk, M. Kwasny, K. Kopczynski, A. Gietka, T. Lukasiewicz, Z. Frukacz, J. Kisielewski, R. Stepien, K. Jedrzejewski, “Journal of Alloys and Compounds” 301, 398 (2000)
[9]M. Karasek, “IEEE J. Quantum Electr.” 33[10], 207 (1997)
[10]A. F. Obaton, C. Parent, G. Le Flem, P.Thony, A. Brenier, G. Boulon, “Journal of Alloys and Compounds” 300, 123 (2000)
[11]A. Levoshkin, A. Petrov, J. E. Montagne, “Optics Communications” 185, 399 (2000)
[12]E. Georgiou, O. Musset, J. P. Boquillon, B. Denker, S. E. Sverchkov, “Optics Communcations” 198, 147 (2001)
[13]P. Laporta, S. De Silvestri, V. Magni, O. Sveito, “Optical Letters” 16[24], 1952 (1991)
[14]S. J. Hamlin, J. D. Myers, M. J. Myers, “SPIE Eyesafe laser: Components, Systems, and Application” 1419, 100 (1991)
[15]H. Yamamoto, S. Okamoto, H. Kobayashi, “J. Lumin.” 100, 235 (2002)
[16]S. Makishima, H. Yamanoto, T. Tomotsu, S. Shionoya, “J. Phys. Soc. Japan” 20, 2147 (1965)
[17]N. Wada, M. Kubo, N. Maeda, M. Akira, K. Kojima, “J. Mater. Res.” 19, 2, 667 (2004)
[18]F. C. D. Lemos, D. M. A. Melo, J. E. C. da Silva, “Opti. Comm.” 231, 251 (2004)
[19]D. L. Zhang, Y. F. Wang, E. Y. B. Pun, Y. Z. Yu, C. H. Chen, J. Q. Yao, “Opti. Mater.” 25, 379 (2004)
[20]H. Sun. “Journal of Alloys and compounds” 391, 198 (2005)
[21]C. H. Wen, S. Y. Chu, S. L. Tyan, Y. D. Juang, “J. Crys. Growth” 262, 225 (2004)
[22]Triebwasser. S ”Phys. Rev” 114, 63 (1956)
[23]O. M. Stafsudd, M. Y. Pines, “J. Opt. Soc. Am.” 62, 1553 (1972)
[24]F. S. Chen, J. E. Geusic, S. K. Kurtz, J. G. Skinner, S. H. Wemple, “J. Appl. Phys.” 37(1), 338 (1966)
[25]A. J. Fox, “Applied Optics” 14(2), 343 (1975)
[26]D. Von der Linde, A. M. Glass, K. F. Rodgers, “Appl. Phys. Lett.” 26(1), 22 (1975)
[27]陳皇鈞譯, “材料科學與工程” 曉園出版社, p.735 (1989)
[28]方志烈著, “半導体發光材料和器件” 復旦大學出版社, p.4-6.
[29]中村哲郎, “固体發光素子とその應用” (1971)
[30]青木昌治, “發光ダイオド.” (1977)
[31]S. Shionoya, W. M. Yen, “Phosphor handbook”, CRC Press LLC, New York, USA (1998)
[32]蘇勉增,吳世康, “發光材料” 第四卷, 1~39頁
[33]G. Blasse, B.C. Grabmaier, “Luminescent Materials” Springer Verlag, Berlin
[34]R. C. Ropp, “Luminescence and the solid state” Elsevier Science Publishers, B. V, The Netherlands（1991）
[35]劉如熹,紀喨勝, “紫外光發光二極體用螢光粉介紹”
[36]林麗玉, “奈米硫化鋅與硫化鋅鎘螢光體微粒之製備、特性鑑定與發光特性研究”
[37]A. Kamimura, S. Sugano, and Y. Tanabe, “Ligand Field Theory and Its Application” First Edition, Shokabo, 269 in Japanese (1969)
[38]G. Blassr and B. C. Grabmaier, “Luminescence Material”, 19, Springer, Berlin
[39]D. L. Dexter, “Chem. Phys.” 22(6), 1063 (1954)
[40]B. Walter, “Ann. Physik” 36, 502, 518 (1889)
[41]P. D. Johnson and F.E. Williams, “J. Chem. Phys.” 18, 1477 (1950)
[42]A. DeLuca, “J.Chem. Educ.” 57, 8, 541 (1980)
[43]P.W. Atkins, “Physical chemistry” 6th edition (1988)
[44]G. Blasse, B.C. Grabmaier, “Luminescent materials”, Springer Verlag, Berlin Heidelberg, Germany (1994)
[45]C. H. Lu, S. Y. Lo, H. C. Lin, “Mater. Lett.” 34, 1375 (1986)
[46]S. I. Shablaev, A. M. Danishebskii, V. K. Subashiev, “Sov. Phys. JETP” 59, 1256 (1984)
[47]E. Wiesendanger, “Ferroelectrics” 1, 141 (1970)
[48]R. Loudon, “Phys. Rev.” 137, A1784 (1965)
[49]E. Burstein, Phonons and Phonon Interactions, Thor A. Bak, Ed.(W. A. Benjamin, Inc. New York, 1964) 276
[50]C. H. Peery, H. J. H. Fertel, T. F. Mcnell, “J. Chem. Phys.” 47, 5, 1619 (1967)
[51]A. Vecht, D. W. Smith, S. S. Chadha, C. S. Gibbons, J. Koh, D. Morton, “J. Vac. Sci. Technol.” B12, 781 (1994)
[52]H. Toki, Y. Sato, K. Tamura, F. Kataoka, S. Itoh, “Proc. Third Int. Display Workshops” 2, 919 (1996)
[53]S. Riehemann, D. Sabbert, S. Loheide, F. Matthes, G. von Bally, E. Kraetzig, “Optical Materials” 4, 2, 437 (1995)
[54]R. Hofmeister, A. Yariv, A. Agranat, “J. Crys. Growth”131,486(1993)
[55]L. A. Knauss, B. E. Vuqmeister, J. Toulouse, “Ferroelectrics” 157, 1-4, 251 (1994)
[56]H. J. Bae, J. Sigman, D. P. Norton, L. Boatner, “Materials Science and Engineering B: Solid-State Materials for Advanced Technology” 177, 1, 87 (2005)
[57]R. Gutmann, J. Hulliger, E. Reusser, “J. Crys. Growth” 126, 4, 578 (1993)
[58]H. Pierhofer, Z. Sitar, F. Gitmans, H. Wuest, P. Gunter, “Ferroelectrics” 201, 1-4, 269 (1997)
[59]Boatner. L. A, Kratzig E, Orlowski. R. “Ferroelectrics” 27, 247 (1980)
[60]王繼揚,管慶才,魏景謙,劉耀崗,王民, “人工晶體學報” 21, 105 (1992)
[61]R. Jagannathan, S.P. Manoharan, R. P. Rao, R. L. Narayanan and N. Rajaram, Bull.