半導體源極汲極端的應力工程從45奈米世代至現今仍然被應用，當半導體尺寸的微縮，需要提高鍺濃度加入更多的應力，但增加鍺的同時會減少硼的含量，故需要使用離子佈植的方式補償硼濃度。本實驗著重於解決因離子佈植造成的問題，其中包含離子佈植損傷，擴散及摻雜離子的活化。故以各製程的各個節點著手設計實驗，進行不同矽鍺組成和二次離子佈值處理後，硼離子之活化情形及矽鍺材料的電性討論，同時，為了應對鍺的低溫製程，加入了低熱預算之微波退火和傳統快速熱退火的比對。
實驗主要分成三部份。第一部分，在矽鍺薄膜上覆蓋矽、鍺及不覆蓋的情況下，經由離子佈植和熱退火後對薄膜品質及電性進行探討。在離子佈植之前覆蓋鍺的樣品經過後續的退火處理遭受到表面損失，使其表現接近未覆蓋的樣品，矽覆蓋樣品可以有效防止表面變得粗糙，進一步降低片電阻值。另一部分試片在退火之前覆蓋一層二氧化矽，在高溫的情況下，能有效的保護矽鍺試片，抑制表面氧化防止表面損失。
第二部分，探討不同鍺含量之矽鍺合金其活化程度的趨勢與行為。研究顯示，硼的活化程度會隨著鍺含量增大而增加，較高鍺含量區間中，硼離子活化比率漸緩，高於臨界點會出現偏析現象導致元件特性下降。故不同濃度矽鍺與硼之間有一平衡點，實驗顯示在特定硼濃度下20~40%鍺含量之間，35%矽鍺為最佳值。矽鍺材料的表現在半導體尺寸持續微縮的進程下，熱處理溫度處於主導地位，但矽鍺材料的組成影響逐漸增大，精準控制內摻雜濃度(In-Situ Doping)成為需要重視的課題。
第三部分，聚焦在不同材料預非晶化離子佈植的擴散情況及電性的研究，隨後以微波退火及快速熱退火進行晶格的修復，使用二次離子質譜儀(SIMS)確認對照組及矽、鍺離子佈植造成的非晶層中硼離子分布情況，以片電阻及遷移率等分析判斷硼離子的活化及離子佈植造成缺陷的演變，三種材料的預非晶化離子佈植以鍺離子佈植表現較佳，且微波退火能夠更有效地增進硼離子活化程度同時防止擴散發生。
本論文證明經各製程步驟的改善及微波退火，有助於矽鍺材料的載子活化，抑制擴散情形及提高電性的表現。

The strain engineering of the source/drain has been applied from the N45 till now. When the size of transistor is reduced continuously, it is necessary to increase the germanium concentration to add more stress, but it reduce boron concentration with increasing the germanium. The use of ion implantation compensates for the boron concentration well, while caused some problems, including ion implantation damage, diffusion and activation of dopant ions. Therefore, improvement was based on the process flow, to activate dopants by tuning different Ge content or pre- amorphized-implantation. At the same time, in order to cope with the low temperature process for Ge, microwave annealing was added to compare with rapid thermal annealing.
There are three parts in this paper. First part, silicon germanium film covered with Si, Ge and uncovered before ion implantation is investigated. The sample covered with Ge undergoes surface loss after annealing, making it behave close to the uncovered sample, and the Si covering sample can effectively prevent the surface from roughness and further reduce the sheet resistance. The other part of the samples is covered with SiO2 before annealing, especially at a high temperature, can be effectively prevent surface from oxidation thus to suppress surface loss.
The second part discusses the trend of the Boron activation in SiGe alloys with different Ge contents. The boron activation level increases with the increase of Ge content. When the content of Ge is higher, the trend will gradually saturate, and even segregate to cause the device degradation. So there is a trade-off between different concentrations of SiGe and boron. Experiments show that from 20% to 40% Ge with a dose of B (ISD 3.2x1020cm-2+I/I 3 x1015cm-2 and 2 x1015cm-2), Si0.65Ge0.35 is an optimum value. For dopants activation in SiGe material, thermal process is dominant, but the influence of SiGe composition is gradually increasing. The control of in-situ doping concentration has become an important issue.
Third part, we focuse on the diffusion and electrical properties of various species pre-amorphized implantation, repair implant damage by microwave annealing and rapid thermal annealing. The sheet resistance, Boron distribution and mobility of sample was investigated to infer the activation level and defect evolution. The performance is the best with Ge PAI among the three samples, and it can enhance the boron activation by microwave annealing to prevent the diffusion effectively.

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