| 研究生: |
吳宛叡 Wu, Wan-Rui |
|---|---|
| 論文名稱: |
燒結促進劑ZnO、MoO3、ZnMoO4對0.91(Mg0.95Co0.05)2(Ti0.95Sn0.05)O4-0.09(Ca0.8Sr0.2)TiO3在介電陶瓷微波特性影響 Effect of Added Sintering Aids ZnO、MoO3、ZnMoO4 on Microwave Dielectric Properties of 0.91(Mg0.95Co0.05)2(Ti0.95Sn0.05)O4-0.09(Ca0.8Sr0.2)TiO3 Ceramics |
| 指導教授: |
李炳鈞
Li, Bing-Jing |
| 學位類別: |
碩士 Master |
| 系所名稱: |
電機資訊學院 - 電機工程學系 Department of Electrical Engineering |
| 論文出版年: | 2017 |
| 畢業學年度: | 105 |
| 語文別: | 中文 |
| 論文頁數: | 81 |
| 中文關鍵詞: | 微波介電陶瓷材料 、燒結促進劑 、ZnO 、MoO3 、ZnMoO4 、0.91(Mg0.95Co0.05)2(Ti0.95Sn0.05)O4-0.09(Ca0.8Sr0.2)TiO3 |
| 外文關鍵詞: | sintering aids, ZnO, MoO3, ZnMoO4, 0.91(Mg0.95Co0.05)2(Ti0.95Sn0.05)O4-0.09(Ca0.8Sr0.2)TiO3, microwave dielectric ceramics |
| 相關次數: | 點閱:97 下載:9 |
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本研究的目的為降低0.91(Mg0.95Co0.05)2(Ti0.95Sn0.05)O4-0.09(Ca0.8Sr0.2)TiO3陶瓷材料的燒結溫度,同時維持良好的微波特性,降低燒結溫度的方法為添加不同重量百分比的燒結促進劑ZnO、MoO3與ZnMoO4。首先針對三種燒結促進劑的影響進行實驗與量測,結果顯示,分別添加0.5wt%的ZnO、MoO3與ZnMoO4,降低的溫度為100℃、50℃與75℃,Qxf由原本的221,000GHz降為100,000GHz、56,000GHz與66,000GHz,最佳結果為添加0.5wt%的ZnO,但是與0.91(Mg0.95Co0.05)2(Ti0.95Sn0.05)O4-0.09(Ca0.8Sr0.2)TiO3未添加燒結促進劑在1225℃的量測結果顯示Qxf為124,000GHz,添加ZnO後的Qxf降太多,所以本研究所提出的三種燒結促進劑對於此材料降低的燒結溫度太少且在Qxf的特性上並沒有達到預期的效果。其次,將微波電路製作在FR4、Al2O3及自製基板0.91(Mg0.95Co0.05)2(Ti0.95Sn0.05)O4-0.09(Ca0.8Sr0.2)TiO3+0.5wt% ZnO,最後量測其頻率響應,由量測結果得到,自製基板中心頻率2.4GHz、插入損耗3.1dB、頻寬比6.6%的帶通濾波器,符合預期,高介電常數的自製基板確實能達到縮小尺寸之需求且自製基板的頻寬也是三者之中最小的,代表選擇性佳,但實作損耗方面不如FR4與Al2O3基板。
The dielectric material 0.91(Mg0.95Co0.05)2(Ti0.95Sn0.05)O4-0.09(Ca0.8Sr0.2)TiO3 sintered at 1325oC presents excellent microwave properties, such as εr =19, temperature coefficient of resonant frequency |τf |< 5 ppm/℃ and Q×f≅220,000GHz. The purpose of this study was to reduce sintering temperature of the dielectric material further while maintaining its good microwave characteristics by adding sintering aids such as ZnO, MoO3 and ZnMoO4 during the conventional sintering process. The effect of sintering aids with varied weight percentages of addition, 0.5, 1.0 and 2.0, on the dielectric material was investigated, respectively. The experimental results showed that the sintering temperature decreased with the amount of sintering aids as expected and εr and τf were less influenced by the addition of these sintering aids. However, Q×f was greatly degraded with the addition of sintering aids. For the present study, the best Q×f was 103,211 GHz for 0.5 wt% addition of ZnO sintered at 1225 oC. Experiment also showed that Q×f was 124,876 GHz for 0.91(Mg0.95Co0.05)2(Ti0.95Sn0.05)O4-0.09(Ca0.8Sr0.2)TiO3 sintered at 1225 oC without any sintering aids. Therefore, ZnO, MoO3 and ZnMoO4 were not qualified as the effective sintering aids for 0.91(Mg0.95Co0.05)2(Ti0.95Sn0.05)O4-0.09(Ca0.8Sr0.2)TiO3. In addition, a microwave filter in microstrip structure was realized on the substrate of 0.91(Mg0.95Co0.05)2(Ti0.95Sn0.05)O4-0.09(Ca0.8Sr0.2)TiO3+0.5wt% ZnO. The measured properties were 2.4 GHz for the center frequency, 3.1dB for the insertion loss and 6.6% for the bandwidth ratio.
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