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研究生：	李柏毅 Lee, Bo-Yi
論文名稱：	絕緣閘極雙極性電晶體模擬實作與表面終端耐壓結構設計 Simulation and Fabrication of Insulated-Gate-Bipolar-Transistor with surface termination design
指導教授：	李文熙 Lee, Wen-Hsi
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電機工程學系 Department of Electrical Engineering
論文出版年：	2014
畢業學年度：	102
語文別：	中文
論文頁數：	95
中文關鍵詞：	絕緣閘雙極性電晶體、高功率元件、表面結構設計
外文關鍵詞：	IGBT, Power device, Surface termination structure
相關次數：	點閱：98 下載：9
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絕緣閘極雙極性電晶體(Insulated-Gate-Bipolar-Transistor)，乃是因應功率元件在高頻應用上所開發出來的元件。它利用整合高功率雙極性電晶體 (Power Bipolar Transistor)以及高功率金氧半電晶體 (Power MOSFET)結構的方法，克服兩個功率元件在應用上的缺點，達到了中高功率、頻率上的有效應用。
隨著半導體元件尺寸的縮小,功率元件的主動區特性會受到影響而降低,本文研究如何在不影響元件主動區特性的前提下,利用最佳化保護環(Guard-rings)設計來提升絕緣閘雙極性電晶體的崩潰電壓並利用元件模擬軟體來探討保護環與矽基板接面形成的空乏效應。
在論文中,我們利用元件模擬軟體(Silvaco)輔助設計高耐壓大電流的絕緣閘極雙極性電晶體,並利用改變表面結構的設計來增強元件對耐壓的能力,不同於過去傳統的表面結構,我們提出新表面結構的崩潰電壓模擬約為1000V,在相同的製程條件下傳統的結構則為300V,且兩者擁有相同的主動特性。
在不同濃度保護環的離子佈值條件中,我們發現當主動區(P-Body)到鄰近的一個保護環距離為21um時且保護環離子佈植的濃度在1X〖10〗^14時,會有崩潰電壓的最大值(1120V),最後我們利用改變主動區的離子佈植濃度和不同的光罩設計得知當主動區的面積大小下降2.3%時會使元件主動區特性降低10%。

Insulation-Gate Bipolar Transistor（IGBT）,which is developed for power devices using medium-power and medium-frequency. It integrates the structures of Power Bipolar Transistor and Power MOSFET, and has better performance in many applications.
With the dimension of semiconductors scaling down, achieving a desired active performance becomes a challenge. The aim of this study is to keep the device active performance and improve the breakdown voltage by optimizing the Guard-ring.
In this paper, we use T-CAD simulation software (Silvaco) to achieve an Insulated Gate Bipolar Transistor (IGBT) design with high breakdown voltage and current. We change the surface structure to enhance the breakdown voltage. Under the same implant and annealing parameters, these two structures have the same forward characteristic, while the new structure breakdown voltage (1000V) is three times higher than the conventional structure (300V).
If the guard-ring implant parameters are altered, the highest breakdown voltage (1120V) can be achieved with a 〖1X10〗^14 ions/cm^2 implant concentration for the Guard-rings. The distance between the first Guard-ring and the main junction (P-body) is found to be 21um. Finally, we change the P-body implant concentration and layout and found that when the cell region is decreased by 2.3%, the active performance will be reduced by 10%.

Contents
摘要 I
Abstract II
誌謝 III
Contents IV
Table Captions VIII
Figure Captions IX
Chapter 1 Introduction 1
1-1 Power Device Over view 1
1-2 Motivation 3
Chapter 2 IGBT Technology Develop Procedure 4
2-1 Technological Development Overview 4
2-2 IGBT Surface Structure Develop 5
2-2-1 Planar IGBT 5
2-2-2 Trench IGBT 6
2-3 IGBT Bottom Structure Develop 7
2-3-1 Punch-Through IGBT(PT-IGBT) 7
2-3-2 Non-Punch-Through IGBT(NPT-IGBT) 8
2-3-3 Field-Stop IGBT(FS-IGBT) 10
2-4 Development of IGBT Related Technology 12
2-4-1Injection Enhanced IGBT(IEGT) 12
2-5 Edge Termination Structure 14
Chapter 3 IGBT Device Operational Modes And Latch-up 17
3-1 Device Operational Modes 17
3-2-1 Reverse-Blocking Mode 17
3-2-2 Forward-Blocking and Conduction Modes 18
3-3 Static Switching Behavior of IGBT 20
3-3-1 Turn-On State 20
3-3-2 Turn-off Stage 21
3-4 IGBT Breakdown Phenomenon 22
3-4-1Avalanche Breakdown 22
3-4-2Punch Through Breakdown 22
3-5 IGBT Latch-up 23
3-5-1 Static Latch-up Mode 23
3-5-2 Dynamic Latch-up Mode 23
3-5-3 Latching prevention methods 24
Chapter 4 Experiment Scheme
4-1 Power Device IGBT characteristic enhancement 25
4-2 Experimental procedure 26
4-3 Factors of P-body concentration on Vth(Threshold voltage)27
4-4 Factors of P-body concentration on Vce(On-State voltage)31
4-5 Facotrs of Guard-rings concentration on Breakdown voltage 34
4-6 New design concepts of Guard-rings 38
4-7 Layout design and Device fabrication 40
Chapter 5 Results and Discussion 50
5-1-1 Effects of P-body concentration on the Vth of IGBT 50
5-1-2 Effects of P-body concentration on the Von of IGBT 60
5-2-1 Effects of Guard-rings structure on the simulation 69
5-2-2 Effects of Guard-rings structure on the measurement 75
5-2-3 IGBT Breakdown voltage discussion 83
Chapter 6 Conclusion 91
Reference 92

Table Captions
Table 2-1 IGBT Generation Developed.[1] 4
Table 2-2 Comparison of the different IGBT concepts.[3] 10
Table 2-3 Different type IGBT structure and characteristic.[3] 11
Table 4-1 Structural parameters for the different Voltage-Rating FLR Designs.[8] 39
Table 4-2 IGBT Layout conditions 43
Table 4-3 Process flow 44
Table 4-4 Edge termination region(left side) and Cell region(right side) 45
Table 5-1 Threshold voltage simulation 52
Table 5-2 Threshold voltage measurement 54
Table 5-3 Different Layout VS Threshold voltage 56
Table 5-4 Threshold voltage Simulation VS Fabrication 58
Table 5-5 On-state voltage simulation 61
Table 5-6 IGBT On-state voltage measurement 63
Table 5-7 Different P-body concentration VS On-sate voltage 65
Table 5-8 The ratio of GR and Cell region 67
Table 5-9 On-State Voltage Simulation & Fabrication 68
Table 5-10 Spacing =15um Breakdown Voltage simulation 69
Table 5-11Spacing=21um Breakdown Voltage simulation 70
Table 5-12Spacing=31um Breakdown Voltage simulation 70
Table 5-13Spacing=31um Breakdown Voltage simulation 70
Table 5-14 Simulation VBD Curve 71
Table 5-15 Simulation Breakdown Voltage trend 73
Table 5-16 IGBT Breakdown voltage measurement 75
Table 5-17 Different Layout and IMPL concentration 77
Table 5-18 Different layout patterns for different GR IMPL 79
Table 5-19 The number of Guard-rings 81
Table 5-20 Simulation VS Experimental 83
Table 5-21 Different Spacing VS Breakdown voltage 85
Figure Captions
Fig 2-1 Cross-section view of the IGBT unit cell 5
Fig2-2 Trench IGBT Structure 6
Fig2-3 PT-IGBT structure 7
Fig2-4 Representative impurity diffusion profile of PT-IGBT 8
Fig2-5 NPT-IGBT structure 9
Fig2-6 Representative impurity diffusion profile of NPT-IGBT 9
Fig2-7 Examples of non-IE and IE structure 12
Fig2-8 Calculated carrier distribution in n-base for different p-base contact ratios 13
Fig2-9 Calculated I-V characteristics for different p-base contact ratios 13
Fig 2-10 Electric field lines(a)shallow and (b)deep planar diffused junctions 14
Fig 2-11 Top vies of diffusion window 15
Fig2-12 Cross-section of edge termination with a single floating field rin 16
Fig3-1 Cross-section of Reverse Blocking Mode 17
Fig 3-2 Cross-section of Forward Blocking 18
Fig 3-3 Spreading of the depletion layer in the central and peripheral regions of an IGBT 18
Fig 3-4 Cross-section of conduction Mode 19
Fig 3-5 Equivalent Circuit for the IGBT & a Cross Section of the IGBT Structure 20
Fig 3-6 Avalanche Breakdown 22
Fig 3-7 Deep P+ body 23
Fig 3-8 Minority Carrier By-pass IGBT 24
Fig4-1 IGBT Top View 25
Fig4-2 MOS gate voltage band gap 27
Fig4-3 The threshold inversion point charge space distribution 29
Fig 4-4 Apply positive voltage on gate 29
Fig 4-5 Schematic diagram of IGBT as a combination of PIN and MOSFET 31
Fig4-6 PN Junction and Depletion Region 34
Fig4-7 Abrupt PN Junction depletion region 35
Fig4-8 Spacing between the main junction and ring d(um)[8] 39
Fig4-9 Conventional Guard-Ring Structure 40
Fig4-10 Propose Guard-Ring Structure 40
Fig 4-11 Edge termination cross-section 41
Fig 4-12 Conventional structure V.S Proposed structure 41
Fig 4-13 Spacing between Main junction to First Ring 42
Fig 4-14 Trench-non-punch-through IGBT 43
Fig 4-15 One cell structure 44
Fig 5-1 IGBT cell region 50
Fig 5-2 Simplified schematic 51
Fig 5-3 Cell region Cross-section 51
Fig 5-4 Threshold Voltage I-V Curve 52
Fig 5-5 Different P-body concentration Structure 53
Fig 5-6 Different P-body concentration Current flowlines 53
Fig 5 -7-1 Threshold voltage Simulation VS Fabrication 58
Fig 5 -7-2 Different P-body concentration VS Threshold voltage 59
Fig5-8 IGBT cell region 60
Fig 5-9 Simplified schematic 60
Fig 5-10 Cell region Cross-section 61
Fig 5-11 On-state Voltage with different P-body concentration 62
Fig 5-12 Ratio of On-state 67
Fig 5-13 Edge termination structure(New structure) 69
Fig 5-14 Depletion region and Ionization 84
Fig 5-15 VBD V.S Different GR IMPL 84
Fig 5-16 High concentration High electric field 85
Fig 5-17 Breakdown voltage Peak value 86
Fig 5-18 Schematic diagram 86
Fig 5-19 Breakdown Voltage 6GR VS 5GR 87
Fig 5-20 5GR depletion region 88
Fig 5-21 6GR depletion region 88
Fig 5-22 Electric field distribution 89
Fig 5-23 GR potential voltage 90 

                                    

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