良好低雜訊特性的磷化銦鎵/砷化銦鎵/砷化鎵及砷化鋁鎵/砷化銦鎵/砷化鎵假形高速電子移動電晶體(PHEMT) 將在本論文中探討，在特性比較上，所使用的PHEMT元件之閘極尺寸分別為0.25×160 µm2 及0.25×300 µm2，用量測直流及高頻低雜訊特性的方式來展示及比較兩種PHEMT的特性。小訊號模型是用0.25×160 µm2 尺寸大小的元件，透過S參數的量測來建立，並使用所建立的小訊號模型來設計低雜訊模組，以驗證小訊號模型，並將此兩種元件加以比較。就比較砷化鋁鎵而言，磷化銦鎵材料在製程及低雜訊特性上的優點也將在此論文中驗示。
　　在直流與溫度加速應力過後，磷化銦鎵PHEMT元件在直流及雜訊特性上的退化機制，以及在熱電子應力過後，砷化鋁鎵及磷化銦鎵PHEMT元件在直流及雜訊特性上變化的比較，所使用的元件是 MOCVD 所磊晶成長的磷化銦鎵/砷化銦鎵/砷化鎵及砷化鋁鎵/砷化銦鎵/砷化鎵假形高速電子移動電晶體結構所做成的，其大小為0.25 × 160 µm2。就雜訊特性而言，其重點元件參數會被討論，而就直流特性而言，在直流與溫度應力過後，電流電壓曲線及二極體特性及空乏區的變化探討，這些是相關於撞擊離子化所造成的陷阱捕捉及陷阱跳離現象。藉由在直流與溫度應力過後，在頻率為12 GHz下所量到很小的低雜訊特性變化來驗證磷化銦鎵PHEMT元件的高穩定度。
　　就熱電子加速應力對磷化銦鎵或磷化鋁鎵的直流特性影響而言，蕭特基能障特性扮演著極為重要的角色，所以應力前後逆向蕭特基能障特性的研究會在此論文中被探討。
　　論文中亦會探討兩種元件在不同溫度下的直流與雜訊特性，所使用元件大小是0.25 × 160 µm2，研究的溫度範圍是絕對溫度300K到450K，雜訊特性的量測頻率為12 GHz，直流方面，主要是研究汲極端跟閘極端之間的蕭特基二極體特性與截止電壓對溫度的變化，比較兩種元件雜訊特性對溫度的變化，我們可以再次發現磷化銦鎵元件是比較穩定的。
　　論文中提出一種直流偏壓，能使熱電子所造成的衝擊離子化現象達到最強的狀態，此直流偏壓稱為 ”最強加速直流應力 MSADC stress”，為加速直流應力研究提供一個新的方式。
最後，我們發現了在不同的加速應力下磷化銦鎵/砷化銦鎵/砷化鎵假形高速電子移動電晶體在應用上較砷化鋁鎵/砷化銦鎵/砷化鎵假形高速電子移動電晶體更為穩定。

　In this thesis, very high performance InGaP/InGaAs/GaAs and AlGaAs/InGaAs/ GaAs pseudomorphic high electron mobility transistors (PHEMTs) is demonstrated. The gate dimensions of fabricated InGaP and AlGaAs gated PHEMT devices are 0.25×160 µm2 and 0.25×300 µm2. The noise performance of 160 µm and 300 µm gate-width devices are measured. The small signal models are also extrapolated. 　　The low noise modules using InGaP and AlGaAs PHEMTs are designed and manufactured. The comparison of InGaP and AlGaAs PHEMTs is also illustrated.
　The degradation mechanisms of the DC characteristics and noise performance after hot-electron (DC accelerated) stresses are investigated. The devices used for investigation were MOCVD-grown In0.49Ga0.51P/In0.15Ga0.85As/GaAs and Al0.25Ga0.75As/In0.15Ga0.85As/ GaAs low noise PHEMT structures with the gate dimensions of 0.25 × 160 µm2. Based on the noise performance, the key noise–effect parameters of devices after DC and thermal stresses are discussed. Based on the DC characteristics with related trapping/detrapping phenomena induced by impact ionization and the variation of depletion in gate-drain region are also investigated. The extreme small variations of minimum noise figure and associated power gain at 12 GHz under DC and thermal stresses are able to demonstrate the high reliability in InGaP low noise PHEMTs.
　The influence of the hot-electron stress on DC characteristics of InGaP or AlGaAs PHEMTs is found to be related to the Schottky characteristics. The studies of reverse Schottky characteristics before and after stress are presented.
　Furthermore, the temperature-dependent DC characteristics and noise performance of InGaP and AlGaAs PHEMTs with the gate dimensions of 0.25 × 160 µm2 are investigated at 12 GHz with temperatures ranging from 300K to 450K. Comparisons of noise performance including minimum noise figure and associated power gain between InGaP and AlGaAs PHEMTs are also presented.
　The best DC bias, termed the Most-Strong Accelerated DC (MSADC) stress condition, for inducing the strongest impact ionization via hot-electron is proposed. This study proposes a new method for determining the strongest hot-electron stress conditions.
Finally, it is found that InGaP/InGaAs/GaAs PHEMTs, after different accelerated stress, are more reliable than AlGaAs/InGaAs/GaAs PHEMTs in device applications.

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