本論文將討論介電陶瓷材料Nd(Zn1/2Ti1/2)O3，添加不同燒結促進劑B2O3 、V2O5 與ZnO，探討燒結促進劑對Nd(Zn1/2Ti1/2)O3 其微波特性的影響及在高頻的應用。文獻顯示，原始的Nd(Zn1/2Ti1/2)O3 燒結溫度必須達到1330 ℃，此時可得介電特性εr~31.6， Q×f ~170000 (8.5GHz) ，τf ~-42 (ppm/oC)。由實驗結果發現，在1300℃燒結且添加0.70 wt% ZnO 於Nd(Zn1/2Ti1/2)O3 時，具有最佳的介電特性﹔εr ~32.26， Q×f ~128000 (7.7GHz)，τf ~45 (ppm/oC) 的最佳特性，確實有達到降低燒結溫度之效果。
最後，本論文利用印刷電路板的方式，製作一個具有可調式零點的高頻帶通濾波器，操作頻段涵蓋2.0 GHz，使用之基板則分別為FR4 ，Al2O3 ，及添加了燒結促進劑ZnO 之Nd(Zn1/2Ti1/2)O3 三種材料。比較使用不同基板的濾波器響應以及元件尺寸，可以發現應用於同一電路上，具有高介電常數(εr)的自製基板可以達到縮小電路面積的效果，且有更好的濾波特性。

The influence of sintering aids on dielectric properties of Nd(Zn1/2Ti1/2)O3 ceramic at microwave frequency would be discussed in this paper. We expected to decrease the
sintering temperature of Nd(Zn1/2Ti1/2)O3 by adding three kinds of different sintering aids : Fe2O3、ZnO and V2O5 respectively.
The experiment results showed that adding 0.75 wt% ZnO could not only achieve the goal of reducing sintering temperature but also reach to the best dielectric properties amount three kinds of sintering aids. Adding 0.75 wt% ZnO has high dielectric constant(εr) of 32.26，Q×f ~128000 (7.7GHz) and τf ~-45 (ppm/oC) while reducing the sintering temperature from 1330 oC to 1300 oC.
In the end, we designed and fabricated a microstrip band pass filters with one tunable transmission zero in upper band of mid-band frequency 2.0 GHz on FR4 、Al2O3 and
Nd(Zn1/2Ti1/2)O3 + 0.75 wt% ZnO substrates. We could find that with the higher dielectric constant(εr) and Q×f , our filter could diminish the scale of size and demonstrate better frequency response.

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