本研究利用(Ba,Ca)(Ti,Zr)O3為主要材料，並添加錳矽氧玻璃作為燒結助劑，以卑金屬積層陶瓷電容製程來備製樣品，在其積層的結構中加入釔/矽摻雜之鈦酸鋇抑制層，使樣品中BCTZ基材在燒結時的X及Y方向收縮與晶粒成長受到抑制，進而得到較小平均晶粒分佈所形成的非殼核結構。
此外亦導入快速燒結的製程，使其在燒結過程中更能有效降低卑金屬電極與陶瓷體之間的收縮應力，亦得到較佳的電極連續性，提昇樣品之電容值特性。
實驗結果發現，錳矽氧玻璃添加之BCTZ與釔/矽摻雜之鈦酸鋇共燒的基層結構確能有效地抑制BCTZ基材的收縮及晶粒成長，經1260度燒結後其平均晶粒大小可抑制在0.6um，進而影響其電容器相關之介電常數、介電損失及溫度係數等特性。

The (Ba,Ca)(Ti,Zr)O3 was used as the primary dielectric material in this study. And the Mn-Si-O glass was applied in the BCTZ system as a sintering aids to prepare multilayer ceramic capacitor by BME process. The Yttrium/Silicon doped BaTiO3 material was applied as the constraining layer to inhibit the XY direction shrinkage and grain growth of BCTZ dielectrics while sintering. Then the constrained BCTZ will have smaller mean grain size after sintering process.
The fast sintering technology was applied in this study also. It could reduce the internal stress caused by sintering shrinkage between base metal electrode and ceramic dielectric. The electrode continuity will become better and the capacitance will be increased.
The experimental result shows that the constraining construction could inhibit the shrinkage and grain growth of BCTZ dielectrics indeed. The mean grain size could be inhibited around 0.6um after 1260 oC sintering process, the dielectric constant, dissipation factor and temperature dependence characters of capacitor will be affected.

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