鈣鈦礦具有光敏特性，常被應用於許多不同功能的元件上，例如：太陽能電池、發光二極體、光電感測器、電阻式記憶體等。目前眾多文獻皆發現摻雜不同種類的陽離子與摻雜不同的陽離子濃度可以有效提升鈣鈦礦太陽能電池性能，而在鈣鈦礦金屬-氧化物-半導體電容器(Metal-oxide-semiconductor capacitor, MOS-C)元件上尚無探討改變陽離子種類或濃度對元件的影響。
本論文主要分為兩大部分。第一部分討論在甲基胺鈣鈦礦(MAPbI3)中以不同濃度的甲脒離子(Formamidinium, FA+)取代部分甲基胺離子(Methylammonium, MA+)對鈣鈦礦薄膜與鈣鈦礦MOS-C元件的影響。在鈣鈦礦薄膜方面，由於FA+的離子半徑比MA+大，可以提高公差因子增強晶體結構，晶粒尺寸上升而減少晶界，使晶界中的缺陷密度下降。在鈣鈦礦MOS-C元件方面，由於MA+的偶極矩比FA+大，因此在1MHz下受到的方向極化影響降低，使得相對介電常數下降。元件在照光前的反轉區不明顯，照光後使移動載子增加累積數量，因此有較明顯的反轉區。
第二部分討論在FA0.75MA0.25PbI3鈣鈦礦中摻雜不同濃度的銫離子(Cs+)對鈣鈦礦薄膜與鈣鈦礦MOS-C元件的影響。在鈣鈦礦薄膜方面，由於Cs+的摻雜可以提升結晶性，形成無孔洞且均勻的鈣鈦礦薄膜，降低薄膜的缺陷，提升光吸收度，因此在大氣下的穩定性相較於FA0.75MA0.25PbI3來得更好。在鈣鈦礦MOS-C元件方面，由於Cs+取代部份陽離子，使得電偶極數量減少，因此造成相對介電常數降低。由於Cs+的摻雜降低了薄膜的缺陷，使得移動載子不易被陷阱俘獲，因此在照光前的反轉區已經明顯形成。

This research consists of two parts. The first part discusses the influence of incorporating different concentrations of formamidinium ion (FA+) in MAPbI3 perovskite on thin film and metal-oxide-semiconductor capacitor (MOS-C) device. Because the ionic radius of FA+ is larger than that of methylammonium (MA+), the substitution of FA+ increases the tolerance factor and grain size, reducing the grain boundary and defect density to form a stable cubic structure. Because the dipole moment of MA+ is larger than that of FA+, the effect of orientation polarization decreases at 1 MHz, reducing the relative dielectric constant. No inversion behavior was found under dark current-voltage (I-V) measurement, but obvious inversion was found under irradiation with light, owing to the increase of mobile carriers.
In the second part of this research, we discussed the influence of doping different concentrations of cesium ion (Cs+) in FA0.75MA025PbI3 perovskite on thin film and MOS-C device. The crystallinity was improved by doping Cs+. Doping Cs+ can improve the quality of perovskite thin films, reducing the defect, and enhancing the light absorption. Therefore, it was much stable than the FA0.75MA025PbI3 perovskite. Because the Cs+ ions occupied some cation sites, the number of dipole moment was decreased, reducing the relative dielectric constant. Moreover, the inversion region was observed under dark I-V measurement, indicating that the capture of mobile charges was also reduced by the Cs+ doping.

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