Cu2ZnSnS4（CZTS）是一種有潛力的吸收材料，因為它的成分在地表含量豐富且無毒，它主要的難題是在製程高效率的太陽能電池中，吸收層與鉬基板之間接觸面的接合性不佳，易造成孔隙與裂縫，為了解決這個問題，我們嘗試在鉬基板與吸收層之間摻入一層自成份硫化物中間層CuS、SnS、ZnS來改善接觸面特性，藉由XRD、SEM、TEM等量測分析。
本研究發現當摻入自成份硫化物中間層時將有效改善鉬基板與吸收層之間的接觸面特性，然而一些問題卻會浮現，譬如當摻入CuS中間層時，底部的銅空缺問題將會嚴重擴大，當摻入ZnS中間層時則將ZnS這個二次相存留下來；最有潛力的選擇是SnS中間層，在結晶性、接觸面特性都有明顯改良，且在元件的效率上有所提升，將是CZTS太陽能電池中間層的有利選擇之一。

Cu2ZnSnS4 (CZTS) is a promising absorber material because of its earth abundant and non-toxic constituents. The major challenge for synthesis the high-efficiency CZTS solar cell is the high-density voids and secondary phases at the interface of the CZTS absorber and the Mo back contact. To overcome this problem, we comparatively study the effect of inserting a self-constituent intermediate layer such as CuS, SnS and ZnS between the CZTS and Mo substrate. Influences of these interlayer materials on the phase purity, crystallinity, interface quality and elementary segregation of the CZTS films made by metal precursors were presented. A crack-free, pinhole-free, and high quality CZTS thin film was obtained by insertion of a SnS buffer layer.

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