在此篇論文中主要介紹兩大部分，第一部份將介紹低損耗的介電材料，且嘗試添加燒結促進劑降低其燒結溫度；第二部份將介紹其在被動元件之應用，並實作於不同基板上，用以探討元件尺寸的改善。
第一部份首先要介紹(Mg1-xZnx)4Ta2O9陶瓷系統之微波介電特性。由實驗中可得知(Mg1-xZnx)4Ta2O9在1460°C燒結4小時可獲得最佳之介電特性 ~ 12.6，Q׃~ 385,000，τf ~ –61.9 ppm/°C。並且，我們試著在(Mg0.95Zn0.05)4Ta2O9中添加0.5–2 wt%的燒結促進劑B2O3，來降低其燒結溫度，以期達到降低製作成本，增加微波材料的應用性。
第二部份我們設計及實作一操作在2.4 GHz的微帶線帶通濾波器，二階混和耦合髮夾式帶通濾波器為主體，利用SIR(Stepped-impedance resonators)結構產生不同的阻抗比，進而抑制二倍頻效應。最後，我們將此電路實作在FR4、氧化鋁和(Mg0.95Zn0.05)4Ta2O9–0.5 wt% B2O3基板上，並量測其頻率響應。由量測的結果可得知，利用高介電係數及低損耗的材料做為電路基板時，確實能達到提升效能和縮小面積的需求。

There are two main subjects in this thesis. First, we will discuss the low loss dielectric material, and try to add sintering aids in order to decrease the sintering temperature. Second, there will be a discussion of passive components and improvement of circuit size in different substrates.
First, we discuss the microwave dielectric properties of (Mg1–xZnx)4Ta2O9 (x = 0.02–0.08) ceramics. In our experiment, the composition (Mg0.95Zn0.05)4Ta2O9 sintered at 1460°C for 4 hours has better microwave dielectric properties with an of 12.6, an extremely high Qf of 385,000 GHz, and a of –61.9 ppm/°C. Addition of B2O3 can lower the sintering temperatures of specimens, whereas it also degrades the Qf values. The experiment result showed that (Mg0.95Zn0.05)4Ta2O9–0.5 wt% B2O3 have the best microwave dielectric properties.( of 12.3, an extremely high Qf of 319,000 GHz, and of –59.1 ppm/°C).
Second, we design and fabricate a microstrip band-pass filter which operation at 2.4 GHz. The filter was constructed by second-order hybrid coupling hairpin-line bandpass filter. In order to control suppress the spurious response, the filter using SIR (step impedance resonator) structure have been designed. Finally, the pattern was printed on FR4, Al2O3 and (Mg0.95Zn0.05)4Ta2O9–0.5 wt% B2O3 substrates. The frequency response of measurement results, using the substrates of high dielectric constant and low loss, which can improve the performance and reduce filter’s size.

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