本研究利用管式高溫爐來成長氧化鋅奈米線於鍍金之矽基板上，在氧氣與氬氣氣氛下，藉由改變成長溫度、成長時間、成長壓力、氣體流量、氣體濃度、鍍金厚度等，探討這些變化對氧化鋅奈米線成長及特性之影響，進而找出最佳的成長條件。由VLS法成長之氧化鋅奈米線於高溫時，其成長關鍵為溫度的變化，但於低溫時，溫度雖然依舊對其成長有很大的影響，但必須再配合另一個關鍵的成長因素-壓力才能成長氧化鋅奈米線。經由X-ray、SEM、TEM、Raman、PL等儀器分析結果顯示，氧化鋅奈米線長度隨燒結的時間增加而增長，且氧化鋅奈米線直徑隨金之厚度增加而增加，在此實驗中成功以低溫350 oC成長奈米線及其最小直徑為20 nm。

　　In this study, zinc oxide nanowires were synthesized on the Au/Si substrates. By reacting in tubular furnace at the oxygen and argon atmosphere, different gas concentrations, gas flow rates, growing time, growing temperatures, growing pressures and Au thickness were introduced to investigate the influences on the characteristics of zinc oxide nanowires. By means of the Raman spectra, Photoluminescence spectra, X-ray Diffraction pattern, scanning electron microscopy and transmission electron microscopy, the chemical and physical characteristics of zinc oxide nanowires were analyzed. In our experiments, when reacting at high temperature, the reacting temperature was the key factor of nanowires’ growth. And when reacting at low temperature, the furnace pressure became more important. The length of ZnO nanowires increases with the reacting time and the diameter of wires increases with the gold thickness as well.
　　The lowest reacting temperature in this study was 350 ℃ and it exhibited the thin diameter as 20 nm.

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