本研究利用自製PECVD(plasma enchanced chemical vapor deposition)系統成長氮化鎵奈米柱晶體(GaN nanorods)。本研究發現，在矽基板與溫度Ga source溫度分別設定為900-950 ℃及950-1000℃下，均可成長出高品質、高密度且垂直之GaN奈米柱。但由於此參數所得到之GaN奈米柱密度過高，亦造成晶體融合生長現象而影響晶體品質，不利於後續元件之製作，因此，本研究開發出三種不同的製程方法以降低成長密度，能有效地降低氮化鎵奈米柱之密度1/2至1/3。

In this study, vertical GaN nanorods are grown on the Si substrate by self-designed PECVD system with substrate temperature around 900 to 950℃ and Ga source temperature around 950 to 1000℃ respectively. PL, XRD and EDS analysis suggest that the crystal quality are excellent and the growth orientation is along [0001]. Also, this study provides three approaches to decrease the density of GaN nanorods. The density of as-grown GaN nanorods could be deducted to half of that grown by conventional methods.

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