利用金屬取代矽製作壓印模具為解決矽模具易脆且使用壽命不長的方法之一。
以無電鍍法在被覆S1818光阻之矽晶片進行鎳磷合金層，作為鎳電鑄之電鑄晶種層，製作具微米級圖案之鎳金屬壓印模具。
添加陽離子界面活性劑於無電鍍鎳鍍浴中以改善鍍層性質，提升無電鍍鎳層在電鑄製程應用上之整體表現。
本研究以黃光微影之方式製作被覆S1818光阻圖形之矽晶片母模，經過化學溶液前處理、敏化及活化等前處理後，
在其表面以添加DTAB (Dodecyltrimethylammounium bromide)及CTAB (Cetyltrimethylammonium bromide)兩種陽離子
界面活性劑之無電鍍鎳液進行無電鍍製程，探討界面活性劑對鍍層在光阻表面成長方式，及鍍層性質之影響，
最後以電沉積的方式將鎳模增厚，脫模後得到具微米級圖案之鎳金屬壓印模具。
研究結果顯示，具光阻結構之矽晶片經過HPM(hydrochloric acid and hydrogen peroxide mixture)前處理後，
利用無電鍍鎳製程將具導電性之鎳磷合金層完整的沉積在光阻及矽晶片表面，鍍層在矽晶片表面之初始成長速率大於
S1818光阻表面；隨著成長溫度的上升，無電鍍鎳層之電阻率隨之下降。添加DTAB及CTAB於無電鍍鎳鍍浴中，
幫助氫氣從S1818表面移除，因而增加鎳磷合金層在S1818光阻表面之初始成長速率，其中以在DTAB濃度為3ppm時
可得到表面平整且無針孔之鍍層。利用鎳電鑄的方式可將鎳沉積在無電鍍鎳層表面使結構增厚；
以丙酮溶液浸泡可將鎳模具與母模分離，模具圖形完整，以本研究中所使用之設備，可得最小線寬為5μm，
圖形高度為2μm；經類鑽碳薄膜表面改質之鎳模具可用於高溫壓印，PMMA圖形複製情形良好。經由此研究可知，
是一個可行且極具有實際應用價值之製程。

A metallic mould can replace the Si mould to solve the problem that Si mould is too brittle to endure the cyclic imprinting process. Nickel mould was fabricated by nickel electroforming on electroless Ni-P thin film plated on polymer (photoresist Shipley S1818)/Silicon composite material. To improve the surface performance of electroless Ni-P film, cationic surfactants were added in the acidic hypophosphite plating baths.
The master mould consisting of a polymer (photoresist)/Si composite material was fabricated by photolithography process. Electroless Ni-P film was deposited on master mould by acidic hypophosphite plating baths contain cationic surfactants. The effects of added cationic surfactants, DTAB (Dodecyltrimethylammounium bromide) and CTAB (Cetyltrimethylammonium bromide) in the acidic hypophosphite plating baths on the properties of the resulting electroless Ni-P deposits on the polymer substrate were studied. Then, the metallic imprint mould was fabricated by electroforming on electroless Ni-P film.
The results show that pretreating polymer/Si surface surfaces with hydrochloric acid and hydrogen peroxide mixture (HPM) was found to enhance the reactivity of electroless Ni-P deposition on polymer/Si master molds. Uniform and glossy Ni-P film was deposited on master mould successfully, and the deposition rate of Ni-P deposited on Si is faster than that on photoresist S1818. As deposition temperature is increased, the deposition rate of Ni-P film is promoted, but the resistivity of Ni-P thin film is dropped. The deposition rate of electroless Ni-P film on S1818 is promoted by adding DTAB and CTAB in the plating baths. Addition of DTAB 3ppm to the plating solution produces the Ni-P deposits with smoother morphology. Pits are not so obvious. Replication of a Ni mold for imprint lithography was demonstrated using Ni electroless plating and Ni electroforming. Fine patterns were successfully replicated using a polymer/Si master mold. The line width is 5 μm, the pitch is 12 μm, and the line depth is 2 μm. Using the replicated Ni mold deposited DLC (Diamond-like carbon)film, the fine pattern is successfully fabricated by the replicated mold. In particular, this process does not need any e-beam evaporation and etching process. It is believed that it is a promising technology to mass-produce micron-scale mold at low costs.

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