由於透明導電氧化物薄膜具有低電阻率及可見光範圍高穿透率，應用範圍非常廣泛，其中，二氧化錫(SnO2)為一寬能階材料具優異光穿透特性。SnO2本質為n-type半導體，藉氧空缺存在提升材料導電性質，也可藉由摻雜其他元素來提升材料導電率。而本研究採用同時添加Sb2O3 與CuO 的SnO2靶材成分，並藉由射頻磁控濺鍍法濺鍍緻密化二氧化錫陶瓷靶材，沈積所需之薄膜，在本研究中，利用改變射頻磁控濺鍍參數(射頻功率及氧氣分率)、靶材組成不同（改變Sb2O3添加量改變）、後續不同氣氛熱處理對薄膜光電特性之影響。
實驗結果顯示，在同時添加Sb2O3與CuO的SnO2靶材成分中，添加Sb2O3對於SnO2導電性質提升有幫助，對於靶材緻密化卻有負面影響，因此同時添加Sb2O3與CuO可製備兼具高緻密性(相對密度最高達98.9%)與良好導電性之SnO2靶材，而對合成之SnO2:Sb2O3:CuO陶瓷靶材所沈積SnO2：（Sb, Cu）薄膜，隨著Sb2O3添加量增加，薄膜光電性質皆降低，以（2Sb2Cu）靶材成分所製備薄膜具有最佳性質。此外，隨著射頻功率及氧氣分率參數條件改變，由於薄膜結晶性增加，有助於導電性質與光學性質的提升，而氧空缺的減少，卻導致電阻上升，因此，射頻功率為120W時及氧氣分率0%的參數條件，（2Sb2Cu）可得最佳電阻率2.5×10-2Ω-cm。
為了進一步改善SnO2：（Sb, Cu）薄膜之光電性質，初鍍膜分別在O2（氧化氣氛）及95%N2+5%H2（還原氣氛）熱處理，可知SnO2：（Sb, Cu）薄膜隨著熱處理氣氛之不同，而有明顯的光電性質變化，在氧化氣氛下，薄膜明顯電阻上升至4.5×10-1Ω-cm，而可見光穿透率提高至90%；在還原氣氛下，薄膜的電阻降低，但穿透率卻略微下降。因此，本研究所製備之SnO2：（Sb, Cu）薄膜可藉由濺鍍參數或後續熱處理的控制，達到薄膜最佳光電特性。

Transparent and conductive oxide (TCO) thin films, which have wide low resistance and high transmittance in the visible wavelength range, have been widely used as various applications. Besides, SnO2 (wide band-gap) has been known to be excellent material for these applications. SnO2 is a n-type semiconductors and has some oxygen vacancies. Other elements will be doped in order to improve electrical property. In this study, SnO2：(Sb, Cu) thin films will be deposited by RF magnetron sputtering using Sb2O3 and CuO co-doped SnO2 ceramic targets. The effects of the RF power, oxygen ratio, targets composition and heat treatment on the electrical and optical properties of SnO2：(Sb, Cu) thin films were investigated.
The experimental results show the addition of Sb2O3 can improve the electrical properties of SnO2 bulks, but suppress bulk density. Therefore, we can obtain targets with highly dense and good electrical property by adding Sb2O3 and CuO. With increasing the contents of Sb¬2O3, the optical and electrical properties of the films degenerate and (2Sb2Cu) films have the best properties. Furthermore, RF power and oxygen ratio parameters have significant influence on the composition, electrical properties and optical properties. Because film crystallization increases, it is helpful to improve film properties. Electrical properties worsen with decreasing oxygen vacancies. On the RF power(120W) and oxygen ratio(0%) parameters, (2Sb2Cu) films have better resistivity 2.5×10-2Ω-cm.
In order to further improve the optical and electrical properties of SnO2：(Sb, Cu) films, the as-deposited films were heat-treated at 250、500°C in O2(oxidation atmosphere) and N2(reduction atmosphere).Under oxidation atmosphere, the resistivity and transmittance of films raise. Under reduction atmosphere, the resistivity of films decrease to 9.1×10-3Ω-cm, but transmittance slightly decrease to 70~75%. Therefore, the purpose of this work is to obtain optical and electrical optimum of SnO2：(Sb, Cu) thin films by controlling sputtering parameters and heat treatment conditions.

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