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研究生： 顏伯丞
Yen, Bo-Cheng
論文名稱： 使用TCAD模擬閾值電壓工程隨機變異性研究：應用於Nanosheet MOSFET與6T-SRAM
TCAD-Based Random Variability Study on Threshold Voltage Engineering for Nanosheet MOSFET and 6T-SRAM Application
指導教授： 江孟學
Chiang, Meng-Hsueh
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics
論文出版年： 2025
畢業學年度： 113
語文別： 英文
論文頁數： 51
中文關鍵詞： 靜態隨機存取記憶體 、介面偶極工程 、TCAD 、全包覆式奈米片電晶體 、功函數變異
外文關鍵詞： SRAM, Interface dipole engineering, TCAD , GAA Nanosheet transistor, Workfunction variation
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    • 摘要 I Abstract II 致謝 III Table of Contents IV List of figures VI List of Table VIII Chapter 1 Introduction 1 1.1 Background and Motivations 1 Chapter 2 Fundamental Theorem 3 2.1 Multi-Vt engineering for Nanosheet MOSFET 3 2.1.1 Volumeless Multi-Vt in Nanosheet 4 2.1.2 Mechanism of interface dipole engineering 5 2.2 Random variation sources 7 2.2.1 Gate Workfunction Variation (WFV) 7 2.2.2 Random Dipole Fluctuation-Induced Variation (DFV) 8 2.3 6T-SRAM 9 2.3.1 Read 10 2.3.2 Write 10 2.3.3 A Compact Model to estimate SRAM Yield 11 2.4 Simulator Calibrations 16 2.5 Impedance Field Method (IFM) 17 2.6 Random Dipole Fluctuation-Induced Variation Method 18 Chapter 3 Single device variation 20 3.1 Nanosheet Device Structure (High performance) 20 3.1.1 HP Single device Vt variation by WFV 22 3.1.2 Single device Vt variation by Dipole 23 3.1.3 Single device Vt variation by Dipole+WFV 25 3.2 Nanosheet Device Structure (Low Power) 27 3.2.1 LP Single device Vt variation 27 Chapter 4 SRAM Design and yield analysis 29 4.1 High density SRAM composed by HP device 29 4.1.1 SRAM Yield analysis 29 4.1.2 SRAM Yield Optimization 32 4.2 LP Single device Vt variation 35 4.2.1 SRAM Analysis 35 4.2.2 LP SRAM Yield analysis 35 4.2.3 SRAM Yield Optimization 36 Chapter 5 Conclusion 39 References 40

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