本論文係研究以感應耦合電漿輔助式熱燈絲化學氣相沉積在低溫製程下，製備多晶型碳化矽薄膜。碳化矽是一種具有寬能隙、高機械強度且與生物體不排斥之材料，而大量運用在光、機、電以及生醫領域。但是在傳統製程上形成碳化矽需要極高的結晶溫度因而無法適用於耐溫性較差之基板，如：銦錫氧化物、高分子聚合物…等。因此，開發低溫碳化矽之製程技術已是各領域所關注之研究。
本論文以熱燈絲化學氣相沉積製備碳化矽薄膜。使用之金屬觸媒為鎢絲線在高溫下熱裂解反應氣體，因此首先探討鎢絲之使用壽命。研究中對鎢絲在不同使用製程中進行實驗，以光學顯微鏡可觀察到，在利用碳化保護之鎢絲線在相同製程條件下其壽命較無碳化處理之鎢絲線長且更能穩定維持其反映溫度。金屬熱燈絲其溫度極高而會造成熱輻射影響，使基板與燈絲之間距離影響薄膜沉積甚鉅。本研究調整金屬熱燈絲與基板之間距離並以X光繞射儀分析，發現在燈絲距離10mm ~ 20mm處其沉積效果最好。
在本研究中係利用矽甲烷、甲烷與氫氣之混和氣體系統沉積多晶碳化矽薄膜。研究中首先探討矽甲烷與甲烷流量比例對結晶碳化矽行程之影響，並以X光繞射儀分析其晶向結構，其中觀察到隨矽甲烷比例升高，薄膜逐漸由碳化矽晶相轉變成矽晶相，反之，逐步提升甲烷流量則可得到碳化矽結晶。
接著論文中探討以感應耦和電漿輔助沉積碳化矽薄膜，觀察沉積情況可發現在電漿能量提升超過50W時，會產生大量矽粉末沉積且沉積速率下降。當電漿能量繼續提升至500W，由場發式電子顯微鏡圖像顯示幾乎沒有薄膜沉積效果。最後，在電漿能量10W時，具有最佳之沉積效果。
研究中利用碳化矽之異質磊晶需碳化緩衝層之基礎原理，在矽基板上沉積高度有序之石墨結晶藉以導向碳化矽之成長方向，由X光繞射圖譜可看出以高度有序石墨處理之基板成長之碳化矽在(111)面之繞射峰強度較無石墨處理之炭化矽強。
本論文最後探討在碳化矽不同氣體氛圍下退火，以紅外線光譜儀觀測氫鍵結確實被去除，但在空氣以及氮氫混合氣體退火後，X光繞射圖譜可觀測出氧化物以及氮化物之形成。

This thesis is to research to make the polycrystalline silicon carbide (SiC) film under low temperature by Inductively Coupled Plasma Hot Filament Chemical Vapor Deposition (ICP-HFCVD, HWCVD). Silicon carbide is a material which is wide ban-gap, provided with excellent mechanical strength and biocompatibility, and have been widely used in photo electricity, machinery, semiconductor and biology fields. Due to the conventional procedure of forming SiC needs high temperature to crystallize, so it's unable to be applicable on low thermal stability substrate, ex: ITO, Polymer. Therefore, the development of low temperature SiC's process technology is an interesting research in recent years.

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