近年來隨著通訊設備的傳輸頻率逐漸提升，元件之高頻特性亦逐漸重要，擁有high-Q 之MLCC元件即適用在高頻設備上，其中，(Ca,Sr)(Ti,Zr)O3之NP0 (Negative Positive Zero/C0G)即屬於溫度補償型之陶瓷電容器，其特色除了擁有特低之介電損耗(＜10E-4)與高頻下high-Q值外，其電容值在溫度-55~125℃間之容值變化量幾乎為零(±30ppm/℃)，但(Ca,Sr)(Ti,Zr)O3材料必須以高溫1300℃之燒結溫度方能完成燒結，並且達到應有之特性。然而，在本實驗中為了讓(Ca,Sr)(Ti,Zr)O3材料得以和銅內電極(熔點1083℃)做共燒，因此必須降低其(Ca,Sr)(Ti,Zr)O3材料燒結溫度並且維持其原電性，因為銅電極除了導電性佳外，同時還可應用在高頻元件上以降低等效串連電阻ESR，最後，再針對能低溫燒結之(Ca,Sr)(Ti,Zr)O3材料配方製作成實際銅內電極之MLCC元件。
本實驗為了降低燒結溫度，分別以不同比例添加Li2CO3 0.25~0.75wt%與本實驗自行合成之4Zn-B-O燒結助劑0~2wt%，並且在1000~1050℃下燒結，其中以1050℃燒結下可以得到最高之密度4.73g/cm3和介電常數k = 29.7，但電性的介電損耗Tan δ值則無法降至10E-4以下。接著對其添加0~2 mole%之MnCO3來改善電性，其結果為添加之添加劑Li2CO3，4Zn-B-O和MnCO3可降低燒結溫度與改善電性，並且在1050℃燒結下有最低之介電損耗，Tan δ = 2E-4 (＜10E-4)，同時，亦有最穩定之溫度係數TCC = ±30ppm/℃。最後在以此配方實際投料製作尺寸為0603之NP0銅內電極MLCC，產品在實際燒結後，在1050℃燒結下可得到介電常數k = 30.1，介電損耗Tan δ = 2E-4，和溫度係數TCC = -2.8ppm/℃。

In recent years, with increasing transmission the frequency of device, the high frequency characteristics of the component becomes more important. (Ca,Sr)(Ti,Zr)O3 material is widely used as the main composition for making ceramic capacitors which satisfy NP0-type temperature coefficient. It has very low dielectric loss (＜10E-4), high quality factor in high frequencies, and its capacitance variation is almost zero (±30ppm/℃) in the temperature range of -55~125℃. However, (Ca,Sr)(Ti,Zr)O3 materials need a high sintering temperature (~1300℃) to achieve good properties. Then, in order to let (Ca,Sr)(Ti,Zr)O3 material be able to co-fire with Cu-inner electrode (melting point: 1083℃), this experiment has to lower the (Ca,Sr)(Ti,Zr)O3 material sintering temperature and keep its electric properties. The reason is that the copper has good conductivity, and at the same time it can lower the device’s ESR (equivalent series resistance) when operating in the high frequency. Lastly, this study will fabricate the NP0 Cu-MLCC by this “lowering sintering temperature” result.
In this study, in order to lower the sintering temperature, the 0.25~0.75wt% Li2CO3 and 0~2wt% 4Zn-B-O sintering aids powder will be added to (Ca,Sr)(Ti,Zr)O3 material to lower sintering temperature. The result is that the sintering aids can lower the sintering temperature, and the 1050℃ sintering can reach the highest density of 4.73g/cm3 and k value of 29.7 in this sintering temperature range between 1000~1050℃. But the dielectric loss still not below the standard (＜10E-4). So, the 0~2mole% MnCO3 will be added to improve the electric properties. The result is that the adding additive of Li2CO3, 4Zn-B-O and MnCO3 can lower the sintering temperature and improve electric properties. It has the lowest dielectric loss 2E-4 and almost zero capacitance variation. Finally, the 0603 size NP0 Cu-MLCC will be fabricated with this result. The device after sintering at 1050℃, it can get the electric properties with dielectric constant of 30.1, dielectric loss of 2E-4, and temperature coefficient of capacitance of -2.8ppm/℃.

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