在本論文中，使用鍺基板作為光檢測器的吸收層。由於文獻說明鍺的表面缺陷非常大。這因素會造成我們所製作而成的鍺金半金光檢測器擁有相當高的暗電流。
為了抑制暗電流以提升鍺金半金光檢測器的表現，我們採用乾氧加上電漿輔助化學氣相沉積在鍺表面製作披覆氧化層。並以試片同時製作金氧半電容器和金氧半光檢測器。由金氧半電容器遲滯現象了解到乾氧方式有效的製作品質不錯的氧化層，也有效的抑制金半金光檢測器的暗電流。因此，熱氧化是一個適合於提升鍺金半金光檢測器功能的方法。而經由乾氧化加上披覆SiO2薄膜的方式所製作的N-type MIS光檢測器暗電流可降低至7.5x10-8A光暗電流比約可達435倍。

In this thesis, metal-semiconductor-metal (MSM) infrared photodetectors (PDs) with light absorption taken place in the Ge substrate were fabricated and tested. Due to its low bandgap, many defects are typically present in the surface, which is one of primary reasons for observing a much larger dark current from the fabricated Ge MSM photodetector as compared to other semiconductors-based PDs. In order to reduce the numbers of interfacial and bulk defects, the combined methods of dry oxidation and plasma-enhanced chemical vapor deposition (PECVD) were used to separately deposit different passivation films on the Ge substrates and the performance evaluations were followed thereafter as the metal-insulator-semiconductor (MIS) capacitors and photodetectors were fabricated. The measurement results including the hysteresis observed from the MIS capacitors would later demonstrate that the aforementioned passivation technique effectively suppresses the magnitude of dark current associated with the Ge MSM PDs. Quantitatively, the lowest dark current obtained was on the average of ~7.5x10-8A and the best photo to dark current ratio of 435 was achieved as result of passivating the foregoing PDs on N-type Ge substrates with the dry oxide and PECVD-deposited SiO2 multilayer films.

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