本論文研究從水溶液中以電化學法製備多孔性鎳電極材料並將其應用於錳氧化物型超高電容器。在ITO基材上以電化學法電沈積鎳銅合金後，再於同一鍍液中選擇性溶解鎳銅合金中的銅製備多孔性鎳電極。
較正的電位下析鍍合金表面呈多顆粒狀分布，合金中含銅量越高，越負的電位合金表面顆粒越少，合金中含鎳量越高。以不同電位析鍍銅鎳合金時會得到不同成分比例的銅鎳合金。在部分條件下會有明顯偏析的現象產生，且合金以顆粒狀堆疊形成管柱狀結構，管柱中心為富銅合金相外圍包圍富鎳合金相的結構。
簡單利用在同一反應槽中以電化學法進行共鍍與選擇性溶解即可製作多孔性電極。對銅鎳合金進行選擇性溶解後，有多孔性結構形成，孔洞狀形為短中空管結構直徑約150 nm。推論孔洞的形成機制主要在於銅鎳還原時分佈不平均，造成銅鎳合金成分比例不同，影響選擇性溶解時銅鎳合金的溶解差異性。當銅鎳合金選擇性溶解時，富銅合金會被溶解，而富鎳合金則不易溶解，因此殘留下富銅合金形成多孔性結構。
將多孔性鎳電極以陽極沈積法沈積錳氧化物應用於超高電容器上。錳氧化物以奈米纖維狀覆蓋於多孔性鎳電極上，以循環伏安法測試其電容性質可得到電流曲線相當接近矩形，且陰陽極反應相當對稱，顯示電極有理想的擬電容特性與電化學可逆性。在掃描速率5mV/s時比電容值為501F/g值，比電容值相較於以同樣方法製作之平面電容器高出1.8倍，且長時間的比電容值維持率達9成以上。

This thesis studies the electrochemical preparation of porous Ni electrode from aqueous plating bath and its application for manganese oxide capacitors.
The porous Ni was prepared be electrodeposition of Ni-Cu alloy on the indium-tin-oxide (ITO) substrate followed by anodic dissolution of the Cu of the Ni-Cu alloy. During the deposition step granular deposits rich in Cu were obtained at more positive deposition potentials. The Ni content in the Ni-Cu increased as the deposition potential became more negative. Under certain conditions columnar structure was formed by stacking of the granular deposits. The Cu and Ni distributed non-uniformally in the columnar deposits; the Cu is rich in the central part and surrounded by Ni-rich alloy. After the deposition, electrochemical dealloying was performed in the same cell used for deposition. Porous surface containing hollow Ni tubes with diameter if about 150nm were produced because the Cu-rich alloys in the central part of the columnar deposits were selectively dissolved.
The porous Ni electrodes was tested for manganese oxide nano-fibers was coated electrochemically onto the porous Ni electrode. At a scan rate of 5mV/s. Cyclic voltammetry experiments indicate that the capacitance available from the porous Ni electrode was 501F/g which is 1.8 times higher than that obtained from planar Ni electrode.

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