在本論文中，利用電漿增強式原子層沉積系統製備鎂摻雜之氧化鋅薄膜，其中主要是改變以往原子層沉積系統以堆疊方式摻雜元素，改以同時通入二乙基鋅及二茂鎂前驅物方式，使鎂摻雜元素均勻分布於氧化鋅薄膜中，以提升薄膜品質。其中藉由控制不同二茂鎂前驅物通入量，以改變氧化鎂鋅薄膜中的鎂摻雜量，並將其應用於製作金屬-半導體-金屬紫外光光檢測器。於論文中，亦利用二氧化矽奈米球塗佈於光檢測器上，作為抗反射層，可增加入射光量至元件中，以提升光檢測器元件效率。
本論文將分析不同鎂含量之氧化鎂鋅薄膜對於元件之特性。以分光光譜儀量測穿透率，並換算各薄膜之光學能隙為3.56 eV至3.71 eV，而鎂含量為0.10至0.19。由各元件之暗電流的結果指出，施予偏壓5 V時，隨著鎂含量的提升，暗電流由1.37 nA下降至297.13 pA。光響度之峰值也由348 nm調變至334 nm。此外，透過加入單層之二氧化矽奈米球作為抗反射層於表面後，各元件之響應度有明顯之提升。鎂含量為0.10之元件紫外光-可見光拒斥比也從無抗反射層之8.27×103提升至8.73×103，等效雜訊功率由原本的1.01×10-14 W下降至8.62×10-15 W，元件檢測度則由3.11×1013 cmHz1/2W−1上升至 3.65×1013 cmHz1/2W−1。

In this study, the high quality MgZnO was deposited on the sapphire substrate by using plasma-enhanced atomic layer deposition (PE-ALD) system with co-doping method. At the MgZnO deposition, the Mg precursor and the Zn precursor were injected into the chamber at the same time which can make Mg dope uniformly at the ZnO films. The SiO2 nanospheres were coated on the device to be the anti-reflection layer (AR layer) to enhance the performance of MgZnO-based photodetector. Therefore, there were more photons be absorbed at the active layer. At the bias voltage of 5V, the dark current of the MgxZn1-xO metal-semiconductor-metal photodetector (MSM-PD) substantially decreased from 1.37 nA to 297.13 pA and the peak position of photoresponsivity was also shifted from 348 nm to 334 nm with an increase in Mg content of 0.10 to 0.19. The UV-visible rejection ratio of the Mg0.1Zn0.9O MSM-PDs without and with AR layer was 8.27×103 and 8.73×103,respectively. The noise equivalent power (NEP) and the detectivity (D*) of the device with AR layer was increased to 8.62×10-15 W and 3.65×1013 cmHz1/2¬W-1 which compare with the device without AR layer.

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