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研究生: 陳建志
Chen, Chien-Chih
論文名稱: 利用網版印刷製程CuInGaSe2薄膜太陽能電池之研究
Fabrication of CuInGaSe2 solar cells by screen printing technique
指導教授: 洪茂峰
Houng, Mau-Phon
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics
論文出版年: 2013
畢業學年度: 101
語文別: 中文
論文頁數: 94
中文關鍵詞: CIGS網版印刷
外文關鍵詞: CIGS, screen priting
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  • 本研究使用自購的CIGS奈米合金粉體,利用KD1分散劑與乙基纖維素膠體,將CIGS奈米粉體配製成均勻的漿料,接著利用網版印刷的方式印出CIGS薄膜,最後經由兩階段熱處理方式完成p-type CIGS薄膜製作。網版印刷的優點在製程簡單、成本低、材料利用率高且適合大面積製造,缺點為碳殘留問題和厚度較難控制。在CdS部分則是利用化學水域法製作,利用硫酸鎘與氯化鎘兩種不同的鎘來源製作出n-type的CdS薄膜。最後再利用SEM、EDS、拉曼光譜分析、XRD、霍爾電性量測、UV-VIS穿透率量測與能隙換算對熱處理後的p-type CIGS薄膜與n-type CdS薄膜進行探討分析。
    最後初步製備CIGS太陽能電池如下結構: SLG/Mo/CIGS/CdS/ZnO/ AZO/ Al ,元件面積大小為0.25 cm2,目前利用硫酸鎘沉積CdS薄膜的CIGS太陽能電池轉換效率最高可達1.39%;而利用氯化鎘沉積CdS薄膜的CIGS太陽能電池轉換效率則為0.99%。

    In this study , using the CuInGaSe2 nano powder , KD1 dispersant and ethyl cellulose formulated into uniform slurry. Using the slurry fabricated CuInGaSe2 thin films by screen priting and Two-stage heat treatment completed p-CuInGaSe2.Advantages of screen printing are low equipment cost , easy fabrication , negligible waste of chemicals and possibility to deposit over large area. The disadvantages of the film are difficult to control the thickness and easy have carbon residue.The CdS thin film is fabricated by CBD method and use different sources of cadmium. The thin films of p-CIGS and n-CdS analysis by SEM, EDS, Raman spectroscopy, XRD, Hall electrical measurements, UV-VIS transmittance measurement and energy gap conversion.
    Finally, the optimal CIGS film was applied as the absorber layer for device configuration: SLG/Mo/CIGS/CdS/ZnO/AZO/ Al.Measuring the CIGS device with area of 0.25cm2, CdS fabricated by cadmium sulfate has conversion efficiency of 1.39% and CdS fabricated by cadmium chloride has conversion efficiency of 0.99%.

    摘要............................. I Abstrate....................II 誌謝............................IV 目錄............................VI 圖目錄........................IX 表目錄........................XI 第一章續論..........................1 1.1前言...................1 1.2太陽能電池簡介..................2 1.2.1矽晶太陽能電池…......................3 1.2.2化合物半導體太陽能電池..........4 1.2.3高分子有機物半導體太陽能電.....................5 1.3太陽能電池結構..................7 1.3.1 背電極Mo玻璃基板...............7 1.3.2 CIS/CIGS吸收層.....................7 1.3.3 CdS緩衝層............8 1.3.4 i-ZnO與AZO........8 1.3.5 Al前電極..................8 1.4研究動機....................10 第二章 理論基礎........12 2.1 太陽光能與光譜介紹..........................12 2.2太陽能電池原理................14 2.3 CIGS吸收層不同製程方式介紹.........20 2.3.1 蒸鍍(Evaporation) ..................20 2.3.2 濺鍍(Sputtering) .....................20 2.3.3電鍍(Electrodeposition) ...........21 2.3.4網版印刷(Screen priting) ........21 2.3.5噴霧熱解法(Spray pyrolysis) .....................22 2.3.6旋轉塗佈(Spin coating) ............22 2.4硫化鎘薄膜不同鎘來源比較...............24 2.5化學水浴法........................25 2.5.1 化學水浴法介紹.......................25 2.5.2 基版放置方式........27 2.5.3 CdS化學反應式........................28 第三章實驗方法與量測儀器介紹......................30 3.1實驗流程............................30 3.1.1 CIGS奈米粉體分散..................32 3.1.2 網印漿料配置........33 3.1.3網印CIGS薄膜.........................34 3.1.4 薄膜熱處理............35 3.1.5 硫化鎘實驗步驟.......................36 3.2實驗藥品與材料................37 3.2.1沉積CuInGaS2藥品..................37 3.2.2沉積CdS藥品.........37 3.3實驗參數............................38 3.3.1 CuInGaS2薄膜製程調變參數.....................38 3.3.2CdS參數..................38 3.3.3鍍膜i-ZnO參數.........................39 3.3.4鍍膜AZO參數........39 3.4量測儀器介紹....................40 3.4.1 動態光散射儀(DLS) ...............40 3.4.2 場發射掃描式電子顯微鏡(FE-SEM) .......40 3.4.3 能量分析光譜儀(EDS) ...........41 3.4.4 X光繞射儀(XRD) .......................42 3.4.拉曼光譜儀(Raman)...................44 3.4.6霍爾效應量測(Hall effect measurement)....45 3.4.7 紫外光-可見光光譜儀(UV-VIS) ...............47 第四章 結果與討論....................49 4.1 CIGS合金奈米粉體分散.....................49 4.1.1 CIGS合金奈米粉體分析..........49 4.1.2 CIGS粉末分散量測..................52 4.2網印CIGS吸收層..............57 4.2.1網印漿料配製.........57 4.2.2第一階段熱處理........................60 4.2.3第二階段高溫硒化....................63 4.2.4 CIGS薄膜電性量測..................69 4.2.5 CIGS薄膜光性量測..................71 4.3 化學水浴法製作CdS..........................73 4.3.1不同鎘來源製作CdS(SEM)(XRD) ............73 4.3.2 CdS光性量測.........77 4.3.3 CdS電性量測.........79 4.4 元件製作...........................80 4.4.1 I-V量測...................81 4.4.2 元件問題改善........83 4.4.3元件製作(二) ..........86 第五章 結論.....................89 參考文獻............90

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