本論文係探討碘摻雜之後有機薄膜的電容–電壓及電流–電壓特性變化。實驗結果中吾人發現，碘的摻雜使利用有機材料為介電質的有機類金氧半(MOS-like)二極體之電容–電壓曲線，相較於未摻雜者，TPD、Alq3及五環素往正閘極電壓軸方向產生偏移，但CuPC則往負閘極電壓軸方向偏移。此結果顯示出碘的摻雜可以在有機薄膜中產生陷阱電荷，且其極性會因有機材料之不同而異。
　　此外吾人亦發現碘的摻雜會明顯改善利用TPD、Alq3及五環素所製作之MSM二極體的電流–電壓特性，但利用CuPC製作的有機MSM二極體則無此發現。吾人認為此改善與摻雜後產生的陷阱電荷有關，並於本論文中提出了一個模式來解釋其改善機制。

　In this thesis, we investigated the variation of C–V (capacitance-voltage) and I–V (current-voltage) characteristics of iodine doped organic thin films. Experimental results show that the C–V curves of the iodine doped organic MOS-like diodes made of TPD, Alq3 and Pentacene shift along the positive axis of the gate voltage as compared with non-doping one, but the C–V characteristics of CuPC are opposite. These results indicate that some quantity of trap states is existed in the organic dielectric layer after doping iodine. Also the electric characteristics of the generated trap states are different for various organic materials.
　We also discover that the I–V curves of the iodine doped organic MSM diodes made of TPD, Alq3 and Pentacene have better performance than the MSM diode of non-doping. We suspect it is related to the trap states brought by doping iodine. A comprehensive model has been proposed to explain the improvement mechanism.

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