目前的照明設備，多數會產生熱及污染等的問題，因此開發具無水銀污染、發光效率高等優點之半導體發光二極體為必然趨勢。本研究構想製作量子點型的發光二極體，利用量子點本身高效能的發光，期待可藉由量子侷限效應在可見光譜的發光波長內調控發光顏色。
本論文分成兩部分，首先以微波法製備出硫化鎘量子點，再利用旋轉塗佈法鍍出光學薄膜，期望經回火處理後能達到P-N Junction 效果。
第二部分使用熱蒸鍍法鍍膜，並對薄膜做光譜、成分、表面形態、載子濃度，再利用熱擴散將銅摻雜進入硫化鎘薄膜內形成P-Type，並直接形成P-N Junction，並與第一部分製備之薄膜比較電性。本研究結果顯示使用旋轉塗佈法製備出元件，雖然可以形成P-N Junction，但元件具有很大漏電流與電阻，其發光程度太低以致於無法偵測到光源。從實驗結果可看出利用熱蒸鍍法製備元件能有效的改善漏電流與降低電阻，並使電流注入量上升，可能是真空系統真空度的影響使元件中存在許多非輻射覆合中心，造成非輻射機率大增，導致元件無法發光。
比較兩種鍍膜方法所得知結果，旋轉塗佈法之製程較簡便，但其P-N接面處會存在較多漏電路徑而產生相當大之漏電流，相反的利用熱蒸鍍法能有效的改善漏電問題，但其製程要求及設備費較高。

Light-emitting diodes (LEDs) have the advantages of no mercury pollution and high emission efficiency. Developments of LEDs not only serve to improve the disadvantages of traditional illuminants but also save the energy and protect the environment of the world. This research is aimed at manufacturing QD LED, making to use of the high performance luminescence and the quantum confinement effect to control the luminescence color of QD.
In this study, CdS quantum dots are synthesized by sol-gel method assisted with microwave heating Spin-coating was method was used to prepare membranes expected to be able to form P-N Junction after sinterins.
In the second part, thermal evaporation method was used to prepare thin. Film The optical properties were analyzed by PL and UV, the surface morphology was observed by SEM, and the carrier concentration mobility was meassured by Hall effect And then thermal diffusion of copper into the CdS film was applied to transform CdS into P-Type Cu-CdS film to form P-N junction. Its electricity was compared with spin-coating method.
The experimental results show that spin-coating method though can form P-N Junction, the device has very large leaking current and high resistance. The emitting intensity is too low to detect.
From experimental we can find out that using thermal evaporation system to prepare device can effective improve the leak of electric current and the resistance it will increase the electric current, Maybe degree of vacuum is so low that the device has a lot of non-recombination center and decrease the radiation probability, make its component not emit the light.
Comparing these two methods, Spin-coating is simple and convenient, but P-N contact surface has more leaking channel than using the thermal evaporation method, The thermal evaporation method can effective improve leak electricity issue, but the process procedure is complicated and the equipment cost is high.

[1]孫培真，”新世代節能環保照明” ，生活科技教育月刊 (2005)38.
[2] M. George Craford,“High efficiency CSS CdTe solar cell” MRS bulletin, 25(10) (2000) 27.
[3] N. Holonyak Jr. and S. F. Bevaqua,“Effects of CdCl2 treatment on the properties of CdS film prepared by r.f. magnetron sputtering”Appl. Phys. Lett., 1(4) (1962) 82.
[4] M. George Craford,“Characterisation of thin CdS/CdTe solar cells using electron and optical beam induced current” Circuits and Devices-IEEE, 8(5), (1992)24.
[5] N. Savage,“Light emitting CdS quantum dots in PMMA Synthesis and optical studies” Technology Review, 103(5) (2000) 38.
[6]陳澤澎，“發光二極體的發展及¬¬¬¬¬¬新應用”，工業材料123 (1997) 74.
[7] N. Holonyak, Jr., S. F. Bevacque, C. V. Bielan, and J. Lubowski,“A comparison of the emission characteristics of UV-LEDs and fluorescents lamps for polymerization applications” Appl. Phys. Lett., 3(3) (1963) 1.
[8] D. G. Thomas, J. J. Hopfield, and C. J. Frosch, “Recent progress in transparent oxide semiconductors: Material and device application” Phys. Rev. Lett., 15(22) (1965) 857.
[9] M. J. Chou, D. C. Tsui, and G. Weimann, “Crystal phase transformation in sol-gel films of nanocrystalline CdSe and CdS ”Appl. Phys. Lett., 47(6)(1985)609.
[10] M. A. Haase, J. Qiu, J. M. Depuyde, and H. Cheng, “Formation of CdS nanoparticles by gas-diffusion method in sol–gel derived ureasilicate matrix“Appl. Phys. Lett., 59(11) (1991) 1272.
[11] Nakamura, Kitamura, H. Umeya, A. Jia, M. Kobayashi, A. Yoshikawa, M. Shimotomai, Y. Kato, and K. Takahashi, “Crystal phase transformation in sol-gel films of nanocrystalline CdSe and CdS”Electronics Lett., 34(25)(1998) 2435¬¬¬.
[12] A. Ishibashi, J. Crys. “Architectural Control Syntheses of CdS and CdSe Nanoflowers, Branched Nanowires, and Nanotrees via a Solvothermal Approach in a Mixed Solution and Their Photocatalytic
Property “grow., 159 (1996) 555.
[13] S.M.Sze,”Physics of Semiconductor Device,” Wiley Interscience Publication,New York,(1981).
[14] Landholt-Boernstein (1982).
[15] J. E. Macintyre(executive editor), F. M. Daniel, V. M. Stirling(assistant editors), Dictionary of Inorganic Compounds-Chemical Database ,1st Editions, Published by Charpman and Hall(1992).
[16] A. N. Goldstein, C. M. Echer, A. P. Alivisatos,“ Optical characterization of bare CdSe and CdSe/CdS core/shell”Science, 256 (1992) 1425.
[17] K. P. Jain,“ Physics of Semiconducting Nanostructures”, Narosa Publication, (1997)25.
[18] J. Nanda, B. A. kuruvilla, K. V. P. Shafi, D. D. Sarma, “Improved performance of dense TiO2/CdSe coupled thin films by low temperature process “Phys. Rev. B, 59 (1999) 7473.
[19] A. D. Yoffe, “Synthesis and characterization of CdS nanoparticles in polystyrene microfibers ”Adv. Phys., 42 (1993) 173.
[20] M. E. Wozniak, and A. Sen, “Trilayer hybrid polymer-quantum dot light-emitting diodes ”Chem. Mater., 4 (1992) 753.
[21] Y. Wang and N. Herron, “Microcavity Light-Emitting Devices Based on Colloidal Semiconductor Nanocrystal Quantum Dots ”J. Phys. Chem., 91 (1987) 257.
[22] C. Petit, P. Lixon, and M. P. Pileni,“Electroluminescence and cathodoluminescence from inorganic CdSe nanocrystals embedded in thin films“J. Phys. Chem., 94 (1990) 1598.
[23] N. Herron, Y. Wang, H. Eckert,“ Red light emitting solid state hybrid quantum dot–near-UV GaN LED devices”J. Am. Chem. Soc., 112 (1990) 1322.
[24] T. Vossmeyer, L. Katsikas, M. Giersig, I. G. Popovic, K. Diesner, A. Chemseddine, A. Eychmuller, and H. Weller, “NiO as an Inorganic Hole-Transporting Layer in Quantum-Dot Light-Emitting Devices“
J. Phys. Chem., 98 (1994) 7665.
[25] M. L. Steigerwald, A. P. Alivisatos, J. M. Gibson, T. D.Harris, R. Kortan, A. J. Muller, A. M. Thayer, T. M. Duncan, D. C. Douglass, L. E. Brus, “Electroluminescence from heterojunctions of nanocrystalline CdS and ZnS with porous silicon ”J. Am. Chem. Soc., 110 (1988) 3046.
[26] R. Rossetti, J. L. Ellison, J. M. Gibson, L. E. Brus, “Photoluminescence of p-type CdS:Cu thin films” J. Chem. Phys., 80(9) (1984) 4464.
[27] T. Gacoin, K. Lahlil, P. Larregaray, and J-P. Boilot, “Recent progress in transparent oxide semiconductors Materials and device application”J. Phys. Chem. B, 105 (2001) 10228.
[28] R. Reisfeld, J. Alloys and Compounds, “Characteristics of nanocrystalline CdS films fabricated by sonochemical, microwave and
solution growth methods for solar cell applications“ 341 (2002) 56.
[29] C. B. Murray, D.J. Norris, M.G. Bawendi, “Green and red electroluminescence from CdS powder electrodes in aqueous solutions”J. Am. Chem. Soc., 115(1993)8706.
[30] Mike. Lazell, Paul O’Brien,“ Quantum Dot Activated All-inorganic Electroluminescent Device Fabricated Using Solution-Synthesized CdSe/ZnS Nanocrystals”J. Mater. Chem., 9 (1999) 1381.
[31] S. Komarneni, R. Roy, Q. H. Li, “A light-emitting sandwich filling”Mater. Res. Bull. 27(12), (1992)1393.
[32] Christopher. C. Landry, Jason Lockwood, and Andrew R. Barron, “Electroluminescent properties of device based on ZnS:Tb/CdS core-shell nanocrystals”Chem. Mater. 7, (1995)699.
[33] J. Zhu, O. Palchik, S. Chen, and A. Gedanken, “Heterogeneous integration of CdS filters with GaN LEDs for fluorescence detection Microsystems“J. Phys. Chem. B 104, (2000)7344.
[34] Y. Wada, H. Kuramoto, J. Anand, T. Kitamura, T. Sakata, H. Mori, and S. Yanagida, “Improvement in the light emission characteristics of
CdS:Cu/CdS diodes“J. Mater. Chem. 11, (2000)1936.
[35] J. J. Zhu, M. G. Zhou, J. Z. Xu, X. H. Liao, “Analysis of CdS/CdTe devices incorporating a ZnTe:Cu/Ti Contact”Mater. Lett. 47, (2000)25.
[36] X. H. Liao, J. J. Zhu, H. Y. Chen, “Emission of lights of various colors from p-CdS:Cu/n-CdS thin-film diodes”Mater. Sci. Eng. B 85, (2001)85.
[37] H. Uda, H. Yonezawa, Y. Ohtsubo, M. Kosaka, H. Sonomura, “Improvement in the efficiency of Cu-doped CdS/non-doped CdS photovoltaic cells fabricated by an all-vacuum process”Sol. Energy Mater. Sol. Cells, 75 (2003) 219.
[38] H. Uda, T. Hujii, S. Lkegami, and H. Sonomura, “Thin film CdTe-CdS heterojunction solar cells on lightweight metal substrates ”Proceedings of the 26th IEEE PVSC, (1997)523.
[39] K. Senthil, D. Mangalaraj, Sa. K. Narayandass, R. Kesavamoorthy, G. L. N. Reddy, Nucl. Instr. and Meth. “Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reductionin” Phys. Res. B., 173 (2001) 475.
[40] K.El Assali, M. Boustani, A. Khiara, T. Bekkay, A. Outzourhit, E. L. Ameziane, J. C. Bernede, and J. Pouzet, “Bright and Color-Saturated Emission from Blue Light-Emitting Diodes Based on Solution-Processed Colloidal Nanocrystal Quantum Dots”Phys. Stat. Sol., 178 (2000) 701.
[41] H. Ashour, K.El Assali, “Improvement of brightness with Al2O3 passivation layers on the surface of InGaN/GaN-based light-emitting diode chips” Phys. Stat. Sol., 184 (2001) 175.
[42] E. Cordoncillo, P. Escribano, G. Monros, M. A. Tena, V. Orera, and J. Carda, “CdS-nanoparticle light-emitting diode on Si”J. Solid State Chem., 118 (1995) 1.
[43] S. Gorer, G. Hodes, Y. Sorek, R. Reisfeld,“ Optical characterization of vacuum evaporated cadmium sulfide films”Mater. Lett., 31 (1997) 209.
[44] E. J. Dawnay, M. A. Fardad, Mino Green, and E. M. Yeatman, “Organic Light Emitting Diode (OLED) and its application to lighting devices”J. Mater. Res., 12 (1997) 3115.
[45] S. M. Song, S. Y. Choi, J. Non-Cryst. Structural dynamics in CdS±CdTe thin filmsSolids, 291 (2001) 50.
[46] S. Coe, W. K. Woo, M. Bawend, and V. Bulovic, “Highly efficient white organic light-emitting diode ”Nature, 420 (2002) 800.
[47] D. B. Mitzi, L. L. Kosbar, C. E. Murray, M. Copel, and A. Afzali, “Optimized indium tin oxide contact for organic light emitting
diode applications “Nature, 428 (2004) 299.
[48] Z. Y. Pan, X. G. Peng, T. J. Li, J. Z. Liu, “Raman scattering and XRD analysis in argon ion implanted CdS thin films prepared by vacuum evaporation”Appl. Sur. Sci., 108 (1997) 439.
[49] P. Facci, V. Erokhin, A. Tronin, and C. Nicolini, “Synthesis and characterization of PPV-based light-emitting copolymer with alkylsilylphenyloxy pendant group for light-emitting diode applications”J. Phys. Chem., 98(1994) 13323.
[50] Y. H. Ma and R. H. Bube, “Complexation of tauro- and
glyco-conjugated bile salts with three neutral B-CDs studied by ACE“J. Electrochemical Soc., 124 (1977) 1430.
[51] C. H. Chen, M. H. J. Emond, E. M. Kelder, B. Meester, and J. Schoonman, “Fast distributed dominating set based routing in large scale MANETs ”J. Aerosol Sci., 30 (1999) 959.
[52] S. Leeuwenburgh, J. Wolke, J. Schoonman, and J. Jansen, J. Biomedical“Nonaqueous electrokinetic chromatography–electrospray
ionization mass spectrometry using anionic cyclodextrins “Mater. Res. A, 66 (2003) 330.
[53] A. A. van Zomeren, E. M. Kelder, J. C. M. Marijnissen, and J. Schoonman, “Photoconductivity of n-type semiconductor nanoparticle-doped poly(N-vinylcarbazole) films”J. Aerosol Sci., 25 (1994) 1229.
[54] M. Danek, K. F. Jensen, C. B. Murry, and M. G. Bawendi, “Synthesis of high quality n-type CdS nanobelts and their applications
in nanodevices“ J. Crys. Grow., 145 (1994) 714.
[55] B. Su and K. L. Choy, “Diffusion length variation in photovoltaic cells with Bridgman-grown CuInSe2 substrates”Thin Solid Films, 361 (2000) 102.
[56]鄭士豪，“微波法製備CdS和CdSe量子點及電噴霧法製備P-N Type發光膜之研究”，國立成功大學碩士論文 民95.
[57] R. A. Pearman，陳世昌 譯，“固態工業電子學”，東華書局(1986).
[58] B. G. Streetman and S. Banerjee, Solid state electronic devices, 5th Editionm, NJ:Prenticce Hall(2000).
[59] M. V. Artemyev，S. V. Gaponenko, I. N. Germanenko, A. M. Kapitonov, “Nanocrystalline CdS MISFETs Fabricated by a Novel
Continuous Flow Microreactor“Chem. Phys. Lett., 243 (1995) 450.
[60] A.P.Alivisatos, “Peak splitting in the CE separation of
enantiomers caused by organic solvents in the sample“Science,271(1996)933.
[61] N. M. Park, T. S. Kim, and S. J. Park, “Synthesis of CdS nanowire networks and their optical and electrical properties”Appl. Phys. Lett., 78 (2001) 23.
[62] J. H. Davies, The physics of low-dimensional semiconductors, Published by the Press Syndicate of the University of Cambridge, p.1-3, 13, 46, 107 .(1998).
[63] R. Rossetti, R. Hull, J. M. Gabson, and L. E. Brus, “A simple route to synthesise nanodimensional CdSe–CdS core–shell structures
from single molecule precursors“J. Chem. Phys., 83 (1985) 1406.
[64] L. E. Brus,“ CIGS J–V distortion in the absence of blue photons”J. Chem. Phys., 79 (1983) 5566.
[65] L. E. Brus, “Electroluminescence from Hybrid Conjugated Polymer-CdS:Mn/ZnS Core/Shell Nanocrystals Devices”J. Chem. Phys., 80 (1984) 4403.
[66] L. Brus, “Improved efficiencies in light emitting diodes made with CdSe(CdS) core/shell type nanocrystals and a semiconducting polymer”J. Quantum Electronics, 22 (1986) 1909.
[67] H.M.Kingston,Stephen J.Haswrll, Microwave-Enhanced .Chemistry.,Chapter1,3-54,American Chemical Society,Washington(1997)
[68] J. C. Jansen, A. Arafat, A. K. Barakat, H. Van Bekkum, “Photoluminescent and electroluminescent properties of Mn-doped
ZnS nanocrystals“Synthesis of Microporous Materials, 1 (1992) 507.
[69] A. Arafat, J.C. Jansen, A.R. Ebaid, H.V. Bekkum, “Structural studies of thin films of semiconducting nanoparticles in polymer matrices”Zeolites, 13(1993)162.
[70] C. G. Wu, T. Bein, “Synthesis of CdSe/CdS with a simple non-TOP-based route”Chem. Commun., (1996) 925.
[71] S. Zijlstra, T. J. de Groot, L. P. Kok, G. M. Visser, W. Vaalburg, “Activation of CdS nanoparticles by metallic ions and their selective interactions with PAMAM dendrimers ”J. Org. Chem., 58 (1993) 1643.
[72] M. D. Taylor, A. D. Roberts, R. Nickels, “Effect of benzene derivatives bearing electron-releasing and/or electron-withdrawing groups on the fluorescence of CdS-Q clusters”J. Nucl. Med. Biol.,23 (1996)605.
[73] D. Patil, B. Mutsuddy, R. Grrard, “Electron beam prebunching in planar cold cathodes with surface current carrying thin films”J. Microwave Power Electromagn. Eng., 27 (1992) 49.
[74] C. C. Landry, A. R. Barron, “Molecular Adsorption-Mediated Control over the Electrical Characteristics of Polycrystalline
CdTe/CdS Solar Cells“Science, 260 (1993) 1653.
[75] S. Komarneni, R. K. Rajha, H. Katuki, “Self-assembled cadmium sulfide microspheres from nanorods and their
optical properties“ Mater. Chem. Phys., 61(1999) 50.
[76] R. Hicks, G. Majetich, “Synthesis and structural characterisation of CdS nanoparticles prepared in a four-components “water-in-oil” microemulsion”J. Microwave Power Electromagn. Eng., 30(1995)27.
[77] R. A. Abramovitch, “Water-soluble CdSe and CdSe/CdS nanocrystals: A greener synthetic route”Org. Prep. Proc. Int., 23 (1991) 283.
[78] R. N. Gedye, W. Rank, K. C. Westaway, “Comparative study of nano-structured CdS thin films prepared by CBD and spray pyrolysis: Annealing effect”Can. J. Chem., 69 (1991) 706.
[79] T. R. J. Dinesen, M.Y. Tse, M. C. Depew, J. K. S. Wan, Res. “Effect of swift heavy ion irradiation on spray deposited
CdX (X = S,Te) thin films“Chem. Intermed., 15 (1991) 113.
[80] J. R. J. Pare, J. M. R. Belanger, S. S. Stafford, Trends Anal. “Influence of CdS heat treatment on the microstructure of CdS and the performance of CdS/CdTe solar cells”Chem., 13 (1994) 176.
[81] G. Bond, R.S. Moyes, D. A. Whan, “Photoluminescence studies of CdTe films and junctions ”Catal. Today, 17 (1993) 429.
[82] A. G. Saskia, “Determination of the interdiffusion coefficient
for the CdS/CdTe heteroestructure by AES sputter depth profiling“Chem. Soc. Rev., 26 (1997) 233 .
[83] W. Yuji, K. Hiromitsu, S. Takao, M. Hirotaro, S. Takayuki, K. Takayuki, Y. Shozo,“ High efficiency CSS CdTe solar cells ”Chem. Lett., 7 (1999)607.
[84] D. L. Boxall, G. A. Deluga, E. A. Kenik, W. D. King, C. M. Lukehart, “Photoluminescence studies of CdS thin films
annealed in CdCl2 atmosphere“Chem. Mater., 13 (2001) 891.
[85] K. W. Gallis, C. C. Landry,“ InGaN/GaN Multi-Quantum Well and LED Growth on Wafer-Bonded Sapphireon-Polycrystalline AlN Substrates by Metalorganic Chemical Vapor Deposition ”Adv. Mater., 13 (2001) 23.
[86] A. Cirera, A. Vila, A. Dieguez, A. Cabot, A. Cornet, J.R. Morante, “Characterization of Ultrasmall CdS Nanoparticles Prepared by the Size-Selective Photoetching Technique Sensors“ Actuators B, 64 (2000) 65.
[87] D. L. Boxall, C. M. Lukehart, “Preparation of Transparent Particulate MoO3/TiO2 andWO3/TiO2 Films and Their Photocatalytic Properties “Chem. Mater., 13 (2001) 806.
[88] (a) O. Palchik, J. J. Zhu, A. Gedanken, “Highly Conductive, Regioregular Alkoxy-Functionalized Polythiophenes: A New
Class of Stable, Low Band Gap Materials“J. Mater. Chem., 10 (2000) 1251; (b) O. Palchik, R. Kerner, J.J. Zhu, A. Gedanken, J. Solid State Chem., 154 (2000) 530; (c) O. Palchik, S. Avivi, D. Pinkert, A. Gedanken, Nanostruct. Mater., 11 (1999) 41; (d) J.J. Zhu, O. Palchik, S.G. Chen, A. Gedanken, J. Phys. Chem. B, 104 (2000) 7344.
[89] J. A. Ayllon, A. M. Peiro, L. Saadoun, E. Vigil, X. Domenech, J. Peral, “Synthesis of CdS and CdSe Nanocrystallites Using a
Novel Single-Molecule Precursors Approach“J. Mater. Chem., 10 (2000) 1911.
[90] (a) X. H. Liao, J. M. Zhu, J. J. Zhu, J. Z. Xu, H. Y. Chen, Chem. Commun., (2001) 937; (b) J. J. Zhu, J. M. Zhu, X. H. Liao, J. L. Fang, M. G. Zhou, H. Y. Chen, Mater. Lett., 53 (2002) 12; (c) X. H. Liao, J. J. Zhu, W. Zhong, H. Y. Chen, Mater. Lett., 50 (2001) 341.
[91] W. Tu, H. Liu, “Coupled and Decoupled Dual Quantum Systems in One Semiconductor Nanocrystal “J. Mater. Chem., 10 (2000) 2207.
[92] J. C. Jansen, A. Arafat, A. K. Barakat, H. Van Bekkum, “Surface Treatment to Enhance the Quantum Efficiency of Semiconductor Nanocrystals Synthesis of Microporous Materials”, 1 (1992) 507.
[93]張振昌，“化學水浴沈積法成長硫化鎘薄膜之研究”，國立中山大學碩士論文 民95.
[94]薛永浚，“不同升溫條件對真空蒸鍍熱氧化法製備氧化鎵薄膜形態及感測特性之研究”，國立成功大學碩士論文 民95.
[95]劉旂甫，“水及正丁醇蒸氣在TiO2(6-12nm)與甘露糖(8-25nm)带電與中性微粒上之非均勻相核凝”，國立成功大學碩士論文 民95.
[96]Moreau,W.M.,Semiconductor Lithography, Plenum Press, “Photovoltage Enhancement: Analysis of Polaron Formation and Charge Transport at the Junctions of Organic Polythiophene and Inorganic Semiconductors“New York(1988).
[97]A.G. Emslie, F.T. Bonner, L.G. Peck, Flow of a viscous liquid on a rotating disk, J. Appl. Phys. 29 (1958) 858–862.
[98]Bornside,D.E.,Macosko, C.W., and Scriven, L.E., 1987,"0n the Modeling of Spin Coating",J﹒Imaging Tech., Vol.13, pp.122-130﹒
[99]Daughton,W.J﹒and F.L. Givens，1979, "On the uniformity of films:a new technique applied to polyimides",J. Electrochem.Soc.,Vol.126,pp.269-276﹒
[100] ETEC 1120 Electro-Principles1”Solid State Principals-Atomic Theory”.
[101] M.G.Burt,”The Justification for Applying the Effective-mass .Approximation to Microstuctures “, J.Phy.Condens.Matter, 4, (1992)6651-6690.
[102] B. D. Cullity, “Elements of X-Ray Diffraction” 2th Edition, Published by Addison-Wesley(1978).
[103] H. Metin, R. Esen, “Annealing studies on CBDgrown CdS thin films”258(2003)141.
[104] A. Henglein, “Photoluminescence Resulting from
Semiconductor-Metal Solid Solution Observed in
One-Dimensional Semiconductor Nanostructures“Chem. Rev., 89 (1989) 1861.
[105] L. Spanhel, M. Haase, H. Weller, A. Henglein, “On the Growth of CdS Nanowires by the Evaporation of CdS Nanopowders”J. Am. Chem. Soc., 109 (1987) 5649.
[106] R. He et al., “Fabrication of Organic/Inorganic Hybrid Nanocomposite of 1,8-Naphthalimide and CdS in Self-Assembly Film “Colloids and Surfaces A: Physicochem. Eng. Aspects, 220 (2003) 151.
[107]林全雯，”微波法製備硫化鎘奈米微粒及電噴霧法製備硫化鎘薄膜及光電性質之研究”，國立成功大學碩士論文 民94.
[108]黃緯苓，”電噴霧法製備硫化鎘及光電性質之研究”，國立成功大學碩士論文 民93.
[109]Zahn, D. R. T.; Maierhofer, Ch.; Winter, A.; Reckzugel, M.; Srama, R.; Thomas, A.; Horn, K.; Richter, “Enhanced Mobility of Poly(3-hexylthiophene) Transistors by Spin-Coating from High-Boiling-Point Solvents”W. J. Vac. Sci. Technol. B, 9 (1991) 2206.
[110]V. Sivasubramanian, A. K. Arora, M. Premila, “Photonic Crystals from Core-Shell Colloids with Incorporated Highly Fluorescent Quantum Dots”Physical. E, 31(2006)93.
[111]Takashi Ogi , Luis Balam Modesto-Lopez , Ferry Iskandar , Kikuo Okuyama, “Aqueous Phase Self-Assembly of Nanoscale p-n Heterojunctions“Colloids and Surfaces A: Physicochem. Eng. Aspects,297(2007)71.
[112]A.G. Emslie, F.T. Bonner, L.G. Peck, Flow of a viscous liquid on a rotating disk, J. Appl. Phys. 29 (1958) 858–862.
[113]林子翔，”旋轉塗佈硫化鎘薄膜與回火條件對薄膜影響之探討“國立成功大學碩士論文 民 96.
[114]國家實驗研究院儀器科技研究中心出版，”真空技術與應用”民90
[115]Donald A. Neamen，“Semiconductor physics and Devices”2003
[116]Dieter K . Schroder， “Semiconductor material and device 　　
　　characterization” 2003
[117]E.Fred Schubert，“Light-Emitting Diodes ”2003