本論文中，利用奈米球鏡微影術搭配傾角旋轉曝光、傾角旋轉蒸鍍等製程來製作特殊奈米結構，同時可以利用Free-Standing技術將製作出的金屬奈米網狀膜轉移到其他元件上，並尋找更多元的應用。此外我們還利用奈米球微影術搭配氧電漿輔助製作金屬奈米網，藉由氧電漿蝕刻技術使奈米球球徑縮小，增加球與球間的間距，再蒸鍍上鉻(Cr)金屬後，即可成功製作出大面積的鉻金屬奈米網狀陣列，鉻金屬奈米網狀陣列可作為後續矽奈米網的蝕刻遮罩。
首先，奈米球鏡微影術是利用奈米球作為聚焦透鏡聚焦入射之紫外光對光阻曝光，搭配非對稱線性光源曝光，可以製作出橢圓形光阻洞，藉由旋轉斜向蒸鍍製作出橢圓金屬網狀陣列，利用Free-Standing技術可使金屬網狀膜轉移至其他基板上作為元件導電層。此外利用非對稱光源結合平移、傾角及旋轉的方式進行多次曝光，可以製作出長軸約200nm短軸約100nm之三次錯位橢圓金屬陣列。
氧電漿處理奈米球微影術搭配黃光微影製程，可以成功製作出矽奈米網場效應電晶體。利用奈米球微影術搭配氧電漿輔助在離子佈植進行硼(B)離子摻雜的絕緣體上層矽(SOI)基板上製作出鉻金屬奈米網，奈米網的最小間距為103nm，藉由黃光微影術定義大小為15μm*15μm的感測區，進行二次鉻金屬蒸鍍，並定義電極區乾蝕刻阻擋層，利用ICP乾蝕刻至二氧化矽絕緣層，除去鉻金屬後，蒸鍍上鈦(Ti)金屬電極即可完成元件製作，另外利用黃光微影改變感測區的長寬比，並去比較不同長寬比感測區及不同最小間距的電特性分析。
綜上所論，本研究利用奈米球鏡微影術搭配非對稱線性光源曝光，可以製作出橢圓形光阻洞，藉由旋轉斜向蒸鍍製作出橢圓金屬網狀陣列，另外利用氧電漿處理奈米球微影術製作出金屬奈米網及矽半導體奈米網搭配黃光微影製程製作出矽奈米網場效應電晶體，未來在水相下進行生醫感測方面的應用。

In this dissertation, we will demonstrate how to fabricate metallic metamaterials and Silicon nanonet Field-Effect Transistors (FETs) using Nanosphere-related lithography techniques. To fabricate metallic metamaterials, we have included techniques such as angled-exposure and angled deposition in Nanospheircal-Lens Lithography (NLL). Planar metamaterials consisting of nanoparticles or nanoholes can be successfully fabricated in large-scale. Plasma-treated Nanosphere Lithography is used to fabricate the etching mask for Silicon nanonet FETs. The patterning of the nanonet FETs is achieved by dry etch method. The minimum width of the nanonet can be as small as 103 nm. Silicon nanonet covering an area of 15μm x 15μm with connecting electrodes can be successfully fabricated using standard semiconductor fabrication procedures. Preliminary results from the electrical measurements of these devices are also presented. Various parameters, including the width and length of the nanonet, and their effects on the electrical properties of the devices are also studied. In the future, we will test how these devices can work in the liquid environment for biosensing applications.

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