本篇論文以1:2的比例混合氯化膽鹼(choline chloride, ChCl)與乙二醇(ethylene glycol, EG)合成深共熔溶劑(deep eutectic solvent, DES)，並且藉由電化學的方法探討砷與銦在此溶劑中的電化學行為，接著進一步地電沉積砷以及砷化銦在金屬基材上。
本實驗主要可分成二部分。第一部分是只含As2O3的溶液，分別透過循環伏安法(CV)、旋轉電極伏安法(RDE)、成核實驗等方式探討As(III)在1:2 ChCl-EG中的氧化還原反應、擴散係數、成核機制等電化學行為。接著使用定電位法、定電流法、脈衝電位法，調整電位、電流、時間、電量、溫度等實驗條件嘗試將砷電沉積在銅片上，並且透過掃描式電子顯微鏡(SEM)、能量分散光譜儀(EDS)、X射線繞射分析儀(XRD)等設備來觀察、比較不同實驗條件下所得的鍍層形貌與元素分布。
第二部分則是在溶液中添加As2O3與InCl3，藉由改變濃度配置、折返電位的方式觀察CV圖的變化來探討As(III)與In(III)在此溶劑中的電化學行為。接著同樣以定電位的方法，調整濃度配置、電位、基材等實驗條件嘗試電沉積InAs合金，並且找出在何種條件下可以得到具有晶相的InAs。
實驗的結果顯示在DES中電沉積砷是可行的。使用DES不僅可以避免水溶液的產氫反應，且不會有AsH3毒性氣體的產生，而DES同時也是更環保的溶劑。第二部分的實驗成功電沉積具晶相的InAs合金半導體，也擴展了此方法的應用性。

The electrochemical behavior of arsenic(III) is investigated in the ethaline deep eutectic solvent (DES) that is obtained by mixing 1 mol eq. of choline chloride and 2 mol eq. of ethylene glycol using As2O3 as the As(III) source. Cyclic voltammetry and rotating disc voltammetry experivments indicate that the reduction of As(III) to As is a single step three electron transfer process with slow kinetics. The result of nucleation experiment shows that the nucleation/growth process of As on glassy carbon electrode is three-dimentional instantaneous. Amorphous arsenic coatings are obtained with constant potential, constant current, and pulse potential electrolysis methods.
When the arsenic(III) and indium(III) coexist in 1:2 ChCl-EG, cyclic voltammetry shows that As shields the redox of indium. Single-step electrodeposition of InAs was conducted with constant potential, and the deposits were characterized by scanning electro microscopy (SEM), energy dispersive spectrometer (EDS), and X-ray diffraction (XRD). Crystalline InAs alloy film on Cu or Ni substrate can be obtained when the deposit composition of As and In is about 1:1.

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