在本論文中，吾人將利用不同結構與材料並搭配熱退火去改善光檢測器特性。實驗分為三個部分，首先，成功製作以Ir/Ru/Au為電極的氮化鎵光檢測器，在氧氣退火處理後，元件特性將有效的被改善。Ir/Ru/Au光檢測器在750度氧氣退火處理後具有低暗電流1.2 × 10-11 (A)、低偏壓效應等優點，因此，Ir/Ru/Au光檢測器在750度氧氣退火處理後於節能與可靠度方面具有優勢。
第二，成功製作Ni/Au電極含LT-AlN:Mg覆蓋層的氮化鎵光檢測器，元件特性在750度氧氣退火處理後較佳。相較於無覆蓋層的光檢測器，LT-AlN:Mg光檢測器在750度氧氣退火處理後具有低暗電流 4.2 × 10-12 (A)、高光暗電流比 2.5 × 105以及優異的拒斥比 8.6 × 103等優點，因而，LT-AlN:Mg光檢測器在750度氧氣退火處理後是一省電、高靈敏度、抗可見光的優良光檢測器。
最後，成功製作ZITO電極含HfO2絕緣層的氮化鎵光檢測器，退火處理能有效改善其元件特性。ZITO含HfO2光檢測器在550度氧氣退火具有低暗電流 8.4 × 10-12 (A)、高光暗電流比 1.2 × 105以及優異的拒斥比 2.4 × 103等優點，因而，ZITO含HfO2光檢測器在550度氧氣退火後是一省電、高靈敏度、抗可見光的優良光檢測器。

In this thesis, we use different structure and material with thermal annealing treatment to improve the characteristics of PDs. The experiment is divided into three parts. First, the GaN PDs with Ir/Ru/Au electrodes are successful fabricated. After the O2 annealing process, the device characters will be effectively improved. The Ir/Ru/Au PD after O2 annealing treatment at 750 ℃ has the advantages such as low dark current 1.2 × 10-11 (A) and low bias effect. Thus, the Ir/Ru/Au PD after O2 annealing treatment at 750 ℃ is good at power saving and excellent reliability.
Second, the GaN PDs of Ni/Au electrodes with LT-AlN:Mg cap layer are successful fabricated. The device characters will be better after O2 annealing treatment at 750 ℃. Compared with the no cap layer PD, the LT-AlN:Mg PD after O2 annealing treatment at 750 ℃ has the advantages like low dark current 4.2 × 10-12 (A), high photo-to-dark current ratio 2.5 × 105 and good rejection ratio 8.6 × 103. So the LT-AlN:Mg PD after O2 annealing treatment at 750 ℃ is a good power saving, sensitivity and visible light rejection PD.
Finally, the GaN PDs of ZITO electrodes with HfO2 insulator layer are successful fabricated. The annealing treatment can effectively improve the device characters. The ZITO electrodes with HfO2 PD after the O2 annealing treatment at 550 ℃ has the advantages such as low dark current 8.4 × 10-12 (A), high photo-to-dark current ratio 1.2 × 105 and good rejection ratio 2.4 × 103. Hence, the ZITO with HfO2 PD after O2 annealing treatment at 550 ℃ is a good power saving, sensitivity and visible light rejection PD.

Chapter 1
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