本論文利用濺鍍的方式製作銅銦鋁先驅層，先驅層的堆疊方式及成份比會影響表面形貌是否能夠形成大晶粒，在實驗中，我已先後嘗試三種不同的製作方法，最後採用先濺鍍鋁，再共濺鍍銅銦的製備方法，以此法形成的先驅層能夠在接下來的高溫硒化形成具有大晶粒的表面形貌，完成硒化製程後，再經由高溫硫化的方式，形成銅銦鋁二硫，此為元件結構中P型區的材料。實驗中可發現，硫不僅容易取代硒，而且硫化製程又不會破壞原有的表面形貌。銅銦鋁二硒的能隙範圍從1 eV到2.7 eV，而銅銦鋁二硫的能隙範圍擴大到1.5 eV到3.5 eV，擴大能隙的範圍是硫化製程重要的目的之一，藉由調整鋁的含量多寡，可以有更大的範圍去改變能隙大小，進而改變發光波段。
接著利用化學水浴法製備硫化鋅層，並退火讓鋅原子擴散進入CuInAlS2表面，使表面轉換為N型CuInAlS2，以形成同質P-N接面，並利用I-V量測確認二極體曲線的產生。最後濺鍍氧化鋁鋅及銀電極，完成同質pn接面二極體之製作。在濺鍍先驅層、化學水浴法製備硫化鋅及濺鍍掺鋁之氧化鋅時，會使用金屬光罩（shadow mask）將元件規範成圓形區域，此目的在於讓電流的分佈更加均勻。
本實驗並以掃描式電子顯微鏡（SEM）、能量分散光譜儀（EDS）、X光繞射儀（XRD）、I-V量測及螢光光譜儀（PL）等分析儀器，量測薄膜的表面形貌、成分比例、結構特性、二極體特性曲線及發光波段等資料。
最後，由電壓-電流特性曲線可看出，此元件具有二極體之特性，並在無光害的環境下，進行發光測試可看到光的產生。

In this thesis, the CuInAl metallic precursors were deposited by sputtering. The composition ratio of the precursors and how the layers were stacked will influence the grain size and morphology of the post-selenized film. In my experiment, three different stacking methods were tried to deposit the precursors. Among them, sputtering Al first and then co-sputtering Cu-In is the best to form CuInAlSe2 (CIASe) film with large grain size after a selenization process. The CIASe film can be transformed to a CuIn1-xAlxS2 (CIAS) film after a high temperature sulfurization process. The formulated CIAS film is a p-type material. In the experiments, the sulfur can replace selenium easily and the original morphology can be kept after the sulfurization. The band gap of a CIASe film is from 1 eV to 2.7 eV. The band gap of a CIAS film is from 1.5 eV to 3.5 eV. Sulfurization and composition of aluminum are keys to modulate the CIAS film’s band gap which is suitable for tuning the emitting wavelength of the light for light emitting diode (LED) applications.
After formulated the p-type CIAS film, ZnS film was deposited by chemical bath deposition method, and then Zn atoms diffused into the skin surface of the CIAS film during an annealing process. The skin surface of p-type CIAS can be transformed to a n-type CIAS. Therefore a pn-homojunction can be formed. Finally, the AZO and Ag electrode were deposited by sputtering and a pn-homojunction diode was fabricated.
During the deposition of precursors, ZnS and AZO layer, shadow masks were used for forming a circle active area for the purpose of spreading current evenly.
Scanning electron microscopy, energy dispersive X-ray spectroscopy, and X-ray diffraction were used to observe the surface morphology, composition and phase identification of thin films, respectively. Photoluminescence measurement was to identify the bandgap of the CIAS film. Finally, the diodes were tested with forward bias. From the I-V curves, some devices showed obvious diode characteristics and a flash of lighting from the fabricated diodes can be observed without light pollution.

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