目前全世界太陽能電池市場中，結晶矽太陽能佔約百分之九十，受限於目前上游矽晶原料的取得成本仍約在每公斤70-80美元，但終端電池價格已降至美金1元以下，以致近期多晶矽太陽能電池廠多處獲利不佳的狀況。薄膜太陽能電池由於係一貫式生產，終端產品極為太陽能模組系統，而非電池加上模組化兩段式生產，加上生產原料成本低(例如：半導體或面板廠常用的矽甲烷SiH4及玻璃基材)，具有較佳的成本競爭優勢，因此在近期也逐漸備受重視。目前薄膜太陽能電池技術中，除了銻化隔(CdTe)薄膜與銅銦鎵硒(CuInGaSe2)，矽薄膜電池具有原料取得容易，生產流程環保等優勢，是目前業界主要量產的方向之一，而其效率的提升，卻是另一個急待解決的重要課題。
為了提升矽薄膜太陽能電池效率，針對可以提升微晶矽(c-Si:H)層在長波長範圍弱吸光的特性是相當重要。目前工業界大多以摻氟的氧化錫(SnO2:F)玻璃作為矽薄膜電池的玻璃基材，由於其粗糙化光學結構在玻璃生產時即製作完成，無法進行後製加工改善其光學結構；由於近期利用濺鍍技術製作摻鋁氧化鋅導電薄膜(ZnO:Al)具有製作成本低、環境汙染低、可調變表面粗糙結構(texture surface)等優勢，目前受到薄膜太陽能電池廠的青睞。
本論文中，我們針對如何提昇透明導電層的光學特性以及其應用在矽薄膜太陽能電池效率提昇有助益的方向進行研究。首先，我們驗證了在摻鋁氧化鋅導電薄膜上利用化學液相沉積法成長氧化鋅奈米柱(ZnO nanorods)結構以提高其薄膜在波長400 nm至850 nm間的光穿透率及光散射性(light scattering)。藉由控制奈米柱在導電薄膜上的沉積密度及調變奈米柱直徑大小可明顯改變薄膜之光穿透率。該研究中，我們亦利用等效介質理論(effective medium approximation)計算不同直徑下的奈米柱結構層之反射率，以作為未來應用於不同光電元件的設計參考。
接著，我們利用化學濕式蝕刻法對摻鋁氧化鋅薄膜表面製作粗糙化結構並研究其表面形貌與光學特性。其中，我們使用了三種不同稀酸溶液，分別為鹽酸(HCl)、硝酸(HNO3)與磷酸(H3PO4)。經過酸液蝕刻後的摻鋁氧化鋅薄膜之平均穿透率皆為75-80%，而利用稀硝酸蝕刻後的薄膜霧度(Haze ratio)在波長550 nm時更可以達到43.0%。除此之外，利用稀硝酸所得到的表面粗糙化摻鋁氧化鋅薄膜其電特性分別為：電阻率為5.47×10-4 Ω-cm，載子濃度為 3.98×1020 cm-3 以及載子移動率為28.7 cm2/Vs。 相較於無表面粗糙化結構的摻鋁氧化鋅薄膜，將矽薄膜太陽能電池元件成長於粗糙化摻鋁氧化鋅薄膜上，其電流密度可有效提昇17.8%，於此更驗證了表面粗糙化結構有助於改善電池元件之光電特性。
同時，我們也利用PECVD成長摻氟之氧化矽(SiOF)薄膜並研究其薄膜與光電特性。其中，我們發現SiOF之薄膜成長特性會受到其成長溫度影響，隨著基板溫度升高，SiOF薄膜之折射率也會隨之增加，而在基板溫度350°C 時得到最高之折射率1.45。除此我們也利用原子力顯微鏡探討SiOF薄膜之表面形貌，發現隨著基板溫度由150°C升高350°C，其薄膜表面粗糙度由22.83 nm增加至41.79 nm。除此之外，利用低溫PECVD製程所製作出的SiOF薄膜，其折射率可調變，因此亦可以應用於矽薄膜或銅銦鎵硒薄膜太陽能電池之抗反射層結構。
最後，我們將摻鋁氧化鋅(ZnO:Al)薄膜成長於多孔性陽極氧化鋁(Porous anodic alumina; PAA)結構上並探討其光學特性。為了研究不同孔徑大小的多孔性結構，陽極氧化鋁結構製備於80V, 100V與120V三種不同的電壓。其中可發現，單層陽極氧化鋁結構之平均穿透率可達90%以上。有鑒於其高穿透率與孔洞化結構，提供了我們可以直接在多孔性結構上製作粗糙化透明導電層的模版(template)。從研究中我們更發現藉由改變陽極氧化鋁孔徑大小，可改變該多孔性結構層之折射率，進而有助於改變入射光之波長，於此可將該技術應用於目前矽薄膜太陽能電池中，除了可以製作不同孔洞大小調變其光學結構，更可以在該模板表面上製作粗糙化的透明導電層，並藉由該粗糙化表面提昇薄膜電池之光電流大小。

The world photovoltaic (PV) cell market is dominated by crystalline silicon solar cells, which account for nearly 90% of world PV cell and module production. Researchers and industry experts believe that thin film solar cells are candidates for significant production volume in the future because of their potential to reach the very low cost target of less than one US dollar per watt. Since silicon is an abundant material, low cost silicon thin-film solar cells have a good chance of gaining a significant market share. However, at present, the efficiency of silicon thin film solar cells is low. Thus, a significant increase in efficiency remains a crucial task in the development of silicon thin film solar cells.
To increase the efficiency of silicon thin film solar cells, optical enhancement of the intrinsically low absorbance for microcrystalline Si in the long wavelength range is critical. To date, large-area module manufacturing has no answer for the less favorable light trapping properties of traditional fluorine doped SnO2 glass substrate (SnO2:F). Therefore, sputtered Al-doped ZnO (ZnO:Al, AZO) films have attracted much attention as an alternative to SnO2:F in silicon-based thin film solar cell applications due to its low cost, low environmental toxicity, and excellent light trapping properties for long wavelengths.
In this thesis, we demonstrate several technologies applied to transparent conducting Al-doped ZnO thin films to efficiently enhance the optical transmittance and light scattering performance. First, the optical transmittance of AZO films can be improved by the use of ZnO nanorods grown by the aqueous chemical growth method (ACG). The transmittance of Al-doped ZnO films with post-grown ZnO nanorods is clearly improved at wavelengths between 400 nm to 850 nm by modulating the air volume ratio of the rod densities and by the variation in the diameter of the rods. Further, the resultant refractive index of ZnO nanorods with varied diameters is evaluated and designed using the effective medium approximation.
Second, the optical properties and morphologies of Al-doped ZnO films textured by the chemical wet-etching method are investigated. The film surface was textured by wet-etching using diluted HCl, HNO3 or H3PO4. The average transmittance of all the post-treated ZnO:Al films remains around 75-80%. Further, the HNO3 etchant gives the highest haze ratio of 49.3% at a wavelength of 550 nm. The textured ZnO:Al films with an electrical resistivity of 5.47×10-4 Ω-cm, carrier concentrations of 3.98×1020 cm-3, and mobility of 28.7 cm2/Vs, can be obtained when etched in diluted HNO3. Compared with solar cells deposited on non-textured ZnO:Al films, a significant enhancement in the short-circuit current density of 17.8% for the a-Si solar cells with textured ZnO:Al films was achieved.
Next, an investigation of a fluorine-doped silicon oxide (SiOF) films prepared using a mixture of SiH4, N2O and CF4 in a conventional PECVD system was performed. Deposition behaviors are determined by the deposition temperature. The refractive index of the SiOF film increases continuously with increasing substrate deposition temperature. At 350°C, the refractive index reaches a maximum value of 1.45. Surface topography is imaged by atomic force microscopy, showing that the surface roughness (root-mean-square) increases from 22.83 nm to 41.79 nm as the deposition temperature increases from 150°C to 350°C. The low-temperature deposition PECVD method produces SiOF films well-suited for use as anti-reflective layers on silicon solar cells or substrate-type thin film Cu(In,Ga)Se2 solar cells.
Finally, the optical and electrical properties of Al-doped ZnO thin films on porous anodic alumina (PAA) template were also investigated. PAA template was fabricated at 80V, 100V and 120V to obtain different pore sizes. It was found that the transmission of the single PAA film is up to 90% higher than the as-grown AZO film in the infrared wavelengths. Due to its high transmittance and periodic arrangement, the PAA film is suitable for use as a template for deposition of the textured Al-doped ZnO. Consequently, specific incident light can be effectively managed on silicon thin film solar cells using the porous anodic alumina method.

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