由於極佳之高速表現、高電子移動率特性及高電流驅動能力，使得III-V族材料為基礎之異質接面雙極性電晶體在微波及積體電路應用上極具發展潛力。本論文中，我們提出以有機金屬化學汽相沉積法(MOCVD)研製以磷化銦(InP)與砷化鎵(GaAs)系列之異質接面雙極性電晶體。本文之主要重點在於元件結構之改良與創新設計，其中包括:(i)以步階式砷化銦鋁鎵為集極之雙異質接面雙極性電晶體 (DHBT) 之集極層，(ii)不同射極突出部厚度對磷化銦鎵/砷化鎵異質接面雙極性電晶體特性之影響，(iii)探討不同表面處理之磷化銦鎵/砷化鎵異質接面雙極性電晶體的特性比較。
首先，提出一具有步階式砷化銦鋁鎵集極結構之磷化銦/砷化銦鋁鎵雙異質接面雙極性電晶體。此元件結構之特徵主要係於基極層與集極層間導入一由四元化合物砷化銦鋁鎵材料所構成之步階式集極層結構，使基-集極接面位障尖峰減緩；再者，此四元化合物砷化銦鋁鎵所構成之步階式集極層結構係由不同大小能隙之複數步階層所組合而成，而此複數步階層之排列係自基極層往集極層方向逐漸增加其能隙值，且些複數步階層之能隙係值係大於基極層之能隙值且小於集極層之能隙值，因此，預期其具較佳之崩潰特性。
其次，探討與比較不同溫度環境下對單異質接面與雙異質接面雙極性電晶體元件特性所造成的影響。由實驗結果得知，相較於單異質接面雙極性電晶體，雙異質接面雙極性電晶體元件擁有較低的衝擊游離率，不易提供電子撞擊游離的機會，以及較低的輸出電導，所以呈現較佳之崩潰特性。此外，常見於傳統雙異質接面雙極性電晶體的電流阻擋效應、遲滯現象已不復見。因此，該雙異質接面雙極性電晶體元件極適合應用於高功率消耗與高溫電子電路。
再則，我們探討不同射極突出部厚度對磷化銦鎵/砷化鎵異質接面雙極性電晶體效能之影響。透過詳盡之理論探討，不適當的突出部厚度將於突出部側壁與基極金屬電極層介面間造成嚴重的表面復合現象。所以適當之突出部厚度對於抑制表面復合現象是一個值得探討的問題。從實驗結果中發現，磷化銦鎵/砷化鎵異質接面雙極性電晶體之最佳射極突出部厚度介於100-200 Å之間。當突出部厚度介於100-200 Å之間，元件具有最好的電晶體特性、較小的基極電流、較大的電流增益、較佳的熱穩定性與可靠度等優點。
最後，探討不同表面處理對異質接面雙極性電晶體特性所造成之影響。經由實驗分析比較，經硫化處理後之元件呈現較低之偏移電壓，但具厚度為0.02 m射極突出部之元件具有較佳電晶體行為，包括：電流增益、基極表面電流密度JSR及基極電流理想因子nB，且亦呈現較佳之可靠度特性。因此，根據實驗結果得知，適當的基極表面處理可改善異質接面雙極性電晶體元件之特性，諸如：硫化處理與射極突出部結構。

Heterojunction bipolar transistors (HBTs) based on III-V compound semiconductor material systems have attracted great attention for digital and microwave applications due to the excellent high-speed and high-mobility performances combined with high current driving capability. In this dissertation, we present the HBT’s based on the InP- and GaAs-based material systems grown by low pressure-metal organic chemical vapor deposition (LP-MOCVD). We focus on the improved designs of conventional device structures, including (i) the use of double HBTs (DHBTs) with step-graded InAlGaAs collector, (ii) the influence of various emitter ledge thicknesses on characteristics of InGaP/GaAs HBTs, (iii) the comparative study of InGaP/GaAs HBTs with different base surface treatments.
First, an interesting InP/InGaAs HBT with a step-graded InAlGaAs collector structure is presented and studied. The step-graded collector uses a quaternary InAlGaAs material between base and collector layer. In addition, the potential spike between base and collector layer can be effectively reduced due to the presence of this inserted quaternary InAlGaAs material. The quaternary InAlGaAs step-graded collector structure is composed of several graded layers with different energy band gaps. This variable band lineup is increased from base to collector layer. Therefore, a better breakdown performance can be expected.
Second, the temperature-dependent characteristics of InP/InGaAs-based single- and double-heterojunction bipolar transistor (SHBT and DHBT) devices are compared and studied. Experimentally, as compared with the studied SHBT, the studied DHBT shows a lower electron ionization rate and better breakdown performance. Moreover, the undesired current-blocking effect, switching, hysteresis phenomenon usually found in an InP/InGaAs conventional DHBT are not observed in our DHBT device. Therefore, it is known that, based on experimental results, the studied DHBT device provides the promise for power circuit and high temperature applications.
Third, the influences of various emitter-ledge thicknesses on the InGaP/GaAs heterojunction bipolar transistors performance are investigated. The improper thickness of emitter-ledge passivations should cause serious surface recombination at the edge of emitter ledge. Therefore, the thickness of emitter ledge is a critical issue and should be carefully considered. From experimental results, the optimum emitter-ledge thickness of InGaP/GaAs heterojunction bipolar transistor is 100-200 Å. The device with 100-200 Å emitter ledge thickness exhibits the best performance such as the relatively lower base surface recombination current, larger DC current gain, thermal stability and reliability.
Finally, the InGaP/InGaAs HBTs with different surface passivations on the base surface are fabricated and studied. Experimentally, the device with sulfur treatment passivation exhibits the lowest offset voltage. Nevertheless, the device with a 0.02 m-thick emitter ledge structure shows better transistor behavior such as DC current gain, base surface recombination density JSR, and base current ideality factor nB. In addition, it also exhibits improved thermal stability and reliability. Therefore, from experimental results, the HBT device performance could be improved by appropriate base surface treatments, e.g., sulfur passivation and emitter ledge structure.

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