本研究利用射頻濺鍍系統來沈積氧化鋅於無電鍍銅被覆之矽基板上，濺鍍條件中固定濺鍍功率及工作距離，藉由改變基板製備條件、氧化鋅濺鍍時間、濺鍍壓力、O2/Ar流量比、基板溫度，探討不同基板製備條件、氧化鋅濺鍍時間、濺鍍壓力、O2/Ar流量比、基板溫度對成長氧化鋅奈米線生長特性之影響，進而探討氧化鋅奈米線成長機制與控制因子。經由X-ray、SEM、TEM等儀器分析結果顯示，氧化鋅奈米線為多晶結構，並以VLS成長機制生長。氧化鋅奈米線直徑隨無電鍍銅晶粒增加而增加，氧化鋅奈米線長度隨氧化鋅濺鍍時間增加而增加，由於無電鍍銅之晶粒大小影響氧化鋅膜之晶粒大小，而氧化鋅膜之晶粒大小影響無電鍍銅擴散到氧化鋅膜表面後的催化劑大小，進而影響氧化鋅奈米線之直徑。

ZnO was deposited on electroless plating copper metallized Si substrate using RF sputter deposition technique. The sputtering time, the working pressure, the O2/Ar ratio, the substrate treatment, and substrate temperature were varied during the deposition of ZnO. The microstructure and properties of resulting ZnO nanowires were examined using scanning electron microscopy, transmission electron microscopy, X-ray diffractometry, energy dispersive spectrometry, and cathodoluminescence spectrometry.
The growth mechanism of ZnO films was followed vapor- liquid-solid method. The diameter of ZnO nanowires were depended on the grain size of electroless Cu. The length of ZnO nanowires were depended on the sputtering time for ZnO. The luminescent properties were depended on the O/Zn ratio. The other processing factors of ZnO sputter deposition, including the working pressure, the O2/Ar ratio, the substrate treatment, and substrate temperature were also investaged.

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