本論文為氧化釩懸浮式熱敏電阻式微感測器的特性研究，使用磁控式射頻濺鍍系統以不同製程條件製備氧化釩薄膜作為懸浮式熱敏電阻式微感測器的感測層，並為了改善熱由矽基板散逸的問題，因此以體型微加工蝕刻技術蝕刻矽基板，用以製作高性能之懸浮式微感測器感測器元件。
以射頻磁控式濺鍍系統沉積氧化釩薄膜，其中探討以不同的製程條件如氬氣與氧氣流量比、射頻功率及腔體壓力對氧化釩薄膜之特性影響，並對薄膜進行不同的溫度及環境下熱處理，利用可變溫之四點探針量測其片電阻並計算電阻溫度係數(Temperature coefficient of resistivity, TCR)，並以原子力顯微鏡(AFM)觀察薄膜表面結構，藉由X光繞射分析儀(XRD)分析薄膜的結晶相與結晶品質，提出氧化釩薄膜於氧氣中400oC熱處理10分鐘可以獲得最大的電阻溫度係數值為2.36 %K-1，且室溫電阻率為8.25 -cm，作為我們後續應用在懸浮式熱敏電阻式微感測器之感測膜。在體型微加工蝕刻部份我們以氫氧化四甲基銨(Tetramethylammonium Hydroxide, TMAH)蝕刻(100)P型矽晶圓，其中探討以不同的蝕刻條件如濃度、溫度及蝕刻時間對矽晶圓影響。最後完成氧化釩懸浮式熱敏電阻式微感測器製作，量測微感測器的電阻溫度係數為-2.36 %K-1，且通入定電流0.03 μA時可得到元件在常壓下熱時間常數、響應度及熱導分別為38.8 ms、635 KV/W及2.07 × 10−8 W/K。

In this thesis, the performance of the vanadium oxide (VOx) floating-type microbolometers was investigated. The VOx thin films were deposited using magnetron radio frequency (RF) sputtering system with various deposition conditions as the sensing layer of the microbolometers. To solve the question of the thermal loss from the Si substrates and improve the performance of the VOx floating-type microbolometers, the bulk micromachining technique was utilized to etch the Si substrate.
The performances of the VOx films deposited using magnetron RF sputtering system at various deposition conditions were analyzed. The relationship between the performance and the deposition conditions, such as various gas flow ratio of Ar and O2, RF powers, and chamber pressure was investigated. such as. The thermal treatments with various temperatures and ambiences were also utilized to improve the performance of the VOx films. The sheet resistance of the VOx films was carried out using the four point probe, which could estimate the temperature coefficient of resistivity (TCR). The atomic force microscope (AFM) and X-ray diffraction (XRD) were used to measure the morphology and the crystallization of the VOx films, respectively. The maximum TCR of 2.36 %K-1 and the resistivity of 8.25 -cm at room temperature for the VOx films with thermal annealed at 400 ˚C in O2 ambience for 10 min were obtained. The resulted VOx films were applied in the microbolometers as the sensing layer.
In the bulk micromachining etching process, the tetramethylammonium hydroxide (TMAH) solutions were utilized to etch the (100) p-type Si substrate, which form the floating structure on the Si substrate. Otherwise, the relationship between the performance and the etching conditions, such as various concentrations of TMAH, etching temperature, and etching time was also investigated.
Finally, the resulted VOx films and the optimize etching condition were applied in the fabricating of the floating-type microbolometers. The TCR of the floating-type microbolometers was -2.36 %K-1. At fixed injection current of 0.03 μA, the thermal time constant 、responsivity and thermal conductivity of the resulted VOx floating-type microbolometers were 38.8ms、635 KV/W and 2.07 × 10−8 W/K, respectively.

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