高溫金屬矽化物擁有許多良好的物理及化學性質，如高熔點、高抗氧化性、高強度與抗高溫潛變性。而在電子元件的應用上，高溫金屬矽化物可降低界面接觸電阻與閘極電阻，進而提升整個元件的驅動電流與電路操作速度，降低反應時間。其中Cr-Si在薄膜電阻上被廣泛使用，也因此其靶材的製作亦變得更為重要。
由於傳統鑄造冶金(Ingot Metallurgy, IM)的限制，不能針對熔點差異過大的元素進行鑄造。且鑄錠在緩慢的凝固後，會有成份偏析、氧化、多孔性、及微結構不均勻等缺陷出現，而後續的熱處理及熱加工雖可改善這些現象，但卻無法完全消除；如以粉末冶金則可得到高密度、細密的晶粒尺寸、均勻的微結構及等方向性之等優良的機械性質。
本研究利用熱壓(HP)、熱均壓(HIP)及真空燒結(Vacuum Sintering)等三種方法製作Cr-Si靶材，其化學組成分別為Cr35-Si65 (Cr-65 mass%Si) 與 Cr50-Si50 (Cr-50mass%Si)，並藉進行一系列的測試以探討不同粉末冶金法對其特性之影響。
由實驗結果顯示，以封罐(Canning)先行製作生坯再以熱均壓製作的Cr-Si靶材，其性質遠比其他方法所製作者來得卓越許多。而且在工業生產上，亦可進行大量製造。

Many silicides of refractory metal offer desirable properties for physical and chemical properties such as high melting point, good oxidation resistance, high strength, and excellent creep resistance at elevated temperatures. For sputtering the silicides as thin films, they are usually made by targets.

Some target material can be made by casting, but the refractory materials such as Cr-Si alloy used for target material can not be fabricated by casting for the chemical composition segregation of the casting structures.

The Cr-Si target materials with chemical composition Cr35-Si65 (Cr-65mass%Si) and Cr50-Si50 (Cr-50mass%Si) provided by vacuum sintering, hot pressing (HP) and Hot Isostatic Pressing (HIP) to produce the targets. And taking a series of testing to discuss the difference among the powder metallurgy methods.

The experimental results show that the least porosity and the purest targets are made by the canning-HIP method. They are better than the ones made by vacuum sintering, HP, and HP-HIP.

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