本研究成長單晶之氧化鋅奈米柱陣列(ZnO nanorod array)作為電子受體，提供電子一直接傳導路徑，再利用旋轉塗佈法填入聚(3-己基噻吩)[poly(3-hexylthiophene-2,5-diyl), P3HT]做為電子施體，組裝反轉型P3HT/氧化鋅奈米柱陣列異質接面太陽能電池。進一步以室溫化學浴法處理氧化鋅奈米柱陣列，使其應用於太陽能電池時能有更良好的電子傳導性質。此外，利用有機染料D149與SQ2修飾氧化鋅奈米柱陣列表面，藉以改善有機/無機介面不相容問題，並探討有機染料之偶極矩對於太陽能電池之影響。另一方面，將P3HT與富勒烯衍生物[(6,6)-phenyl-C61-butyric acid methyl ester, PC61BM]混合薄膜導入氧化鋅奈米柱陣列中，組裝有機/無機異質接面太陽能電池，藉由P3HT與PCBM之間的龐大界面面積提供激子解離，供光電流提升電池效率。本研究並分別利用電化學交流阻抗分析(electrochemical impedance spectroscopic, EIS)、光強度調制光電流分析儀(intensity modulated photocurrent spectroscopy, IMPS)與時間解析光激螢光光譜(time-resolved photoluminescence, TRPL)分析太陽能電池之載子再結合、電子傳輸與激子解離行為。經室溫化學浴法處理與D149染料修飾之P3HT/氧化鋅奈米柱陣列太陽能電池的電池效率可達1.16%，而P3HT:PCBM/氧化鋅奈米柱陣列太陽能電池效率可達1.55%。

ZnO nanorod (NR) array/poly(3-hexylthiophene) (P3HT) heterojunction hybrid solar cells have been successfully fabricated in this study. The vertically aligned single crystal ZnO nanorod array was synthesized by chemical bath deposition (CBD) on ITO substrate. A novel room-temperature chemical bath deposition was employed to alter the surface of ZnO nanorod arrays for a short duration. The RT-modified ZnO nanorod arrays in ZnO NR/P3HT hybrid solars possess superior carrier transport property and interfacial recombination resistance with P3HT. Moreover, significant enhancement of the cell efficiency is achieved by further surface modification of ZnO nanorod array using organic dyes of D149 and SQ2. The open-circuit voltages of the solar cells are influenced by the adsorbed dye molecules, which is ascribed to energy band shift of the dye-modified ZnO. A efficiency of 1.16% is achieved in the D149 modified ZnO NR/P3HT solar cell. Electrochemical impedance spectroscopic (EIS) , intensity modulated photocurrent and spectroscopy (IMPS) and time-resolved photoluminescence (TRPL) are employed to investigate the interfacial recombination, carrier transport and exciton dissociation in the ZnO NR/P3HT solar cells, respectively. On the other hand, in the thesis, the P3HT:PCBM blend film was also infiltrated into ZnO NR to fabricate the hybrid solar cells. A lot amount of P3HT and PCBM interface is expected to increase large short-circuit current density and then improve the cell efficiency. A efficiency of 1.55% is achieved in the P3HT:PCBM/ZnO NR solar cell.

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