在本研究中，使用電漿增強式化學氣相沉積系統製作具圖案化奈米結構之非晶矽太陽能電池，其中奈米結構是採用水熱法成長氧化鋅奈米柱方式製作，而水滴模板法則是用來定義奈米結構之圖案，在傳統的非晶矽太陽能電池中，為使其有較高之短路電流密度，光生載子的吸收厚度與其傳輸距離必須匹配，因此吸收厚度將會受到侷限，而圖案化奈米結構之非晶矽太陽能電池其奈米結構之側壁比起傳統的非晶矽太陽能電池具有較大的吸收面積，並且奈米結構側壁光生載子的傳輸方向垂直入射光之方向，因此它可以同時取得較大的吸收面積和較低的傳輸路徑，此外，圖案化的奈米結構之非晶矽太陽能電池比起傳統的非晶矽太陽能電池有較低的反射率，由於入射光吸收的增加，使得短路電流密度從11.31 mA/cm2增加至18.34 mA/cm2，傳統的非晶矽太陽能電池的轉換效率為5.78%，而圖案化奈米結構之非晶矽太陽能電池的轉換效率將被改善至8.10%，顯著改善太陽能電池元件的轉換效率。

In this study, the amorphous Si solar cells with patterned nanostructure were fabricated using Plasma-Enhanced Chemical Vapor Deposition system (PECVD). The nanostructure is the ZnO nanorods grown using the hydrothermal method. The water droplets template method was used to define the growth pattern of nanostructure. In order to make the higher short-circuit current density for the conventional amorphous Si solar cells, absorption thickness is match with the transport distance of the photo-generated carriers. Thus, the absorption thickness was limited. The amorphous Si solar cells with patterned nanostructure have a larger absorption region in the nanostructure sidewall than the conventional amorphous Si solar cells. The transport direction of the photo-generated carriers in the nanostructure sidewall was vertical to the direction of the incident light, thus it could be obtained the larger absorption area and the lower transport path at the same time. Besides, the reflectance of the amorphous Si solar cells with patterned nanostructure could be decreased in comparison with that of the conventional amorphous Si solar cells. The associated short-circuit current density was increased from 11.31 mA/cm2 to 18.34 mA/cm2 when the absorption of the incident light increases. The conversion efficiency of the solar cells was significantly improved from 5.78% of the conventional amorphous Si solar cells to 8.10% of the amorphous Si solar cells with patterned nanostructure.

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