本論文的工作第一部分是利用分子束磊晶系統成長單晶[ZnO(20Å)/Mn (1Å)]25多層膜，經過RHEED、XRD、XAS以及SQUID和霍爾效應的量測，確定此多層膜為單一晶相的本質性稀磁性半導體。
第二部份對[ZnO (20Å)/Mn (1Å)]25多層膜作後置處理，以中真空、通大量氮氣和通大量氧氣三種不同環境下去做低溫退火處理，我們發現經過以上的條件退火後樣品的磁性皆減少，但是剛沉積與退火後樣品其磁性與電性變化趨勢卻沒有直接相關。藉由個別分析退火系列樣品的電性與局部結構結果進一步討論影響磁性下降的原因。

In the first part of the study, [ZnO (20Å)/Mn (1 Å)]25 multilayers were deposited on Al2O3(11-20) by molecular beam expitaxy. RHEED and XRD measurements revealed that the multilayers had single-phase wurtzite structure. XAS, SQUID, and hall effect measurements indicated that the multilayers were intrinsic dilute magnetic semiconductors.

In the second part, the multilayers were annealed at 350ºC for one hour in three kinds of different environments: medium vacuum, N2 and O2. The magnetic moment for all samples reduced after annealing From XAS and hall effect measurements, we further found that the downside ferromagnetism for annealing samples depended on the disorder of the Mn localized structure and the carrier concentration.

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