本論文針對互補式金氧半電晶體之射頻特性進行分析‚MOSFET的射頻特性如截止頻率、最大震盪頻率被詳加討論。由於元件尺寸不斷的微縮‚外部的寄生元素對本質元件的影響越顯得異常重要。所以‚外部的寄生元素需要被仔細的考慮‚尤其是當工作頻率上升到射頻的範圍。在本論文中‚為了使MOSFET有較好的射頻特性‚我們設計一些不同的元件佈局試著去減少寄生元素的大小。藉由此研究可發現‚最佳化的佈局方式將使得0.13微米MOSFET的截止頻率大大的提升了十幾GHz。
另外‚為了能有效的分析元件的高頻特性‚量測的準確性必須被嚴格的要求‚所以‚在高頻量測中‚合適的De-Embedding結構是非常基本且迫切的。於是‚為了得到最佳的De-Embedding效果‚在本論文中‚我們亦設計了數種De-Embedding的佈局結構。

In the thesis, the effects of external parasitic elements on the radio frequency (RF) characteristics of CMOSFET, such as cut-off frequency (fT) and maximum oscillation frequency (f max) were studied in detail. As the device size is scaling down continuously, the effect of external parasitic elements is more severe, especially when the working frequency is up to the range of RF. For promotion the RF characteristics of MOSFET, various devices’ layouts were designed to reduce the influence of the parasitic elements. The experimental results show that the optimum layout can promote about fifteen GHz frequencies for 0.13um MOSFET.
Next, for analyzing the exact high frequency characteristics of a CMOSFET, the measurement should be very accuracy. Thus, in RF measuring, a suitable de-embedding structure is necessary and important. In this work, we also designed spilt layouts of de-embedding to get the best function of structure, and found the structure with ground shielding is the best one to analyze the RF characteristics.

[1] Tajinder Manku, “Microwave COMS-Dvice Physics and Design,” IEEE Journal of Solid-State Circuits, Vol. 34, No. 3, March 1999, pp.177-285.
[2] Hiroshi Iwai, “COMS Technology for RF Application,” PROC.22nd International Conference on Microelectronice,Vol. 1, NIS, SERBIA, 4-17 May, 2000, pp.27-33.
[3] Paulius Sakalas, Herbert G, Andrej Litwin, Michael Schroter, and Arvydas Matulionis, “Impact of Pad and Gate Parasitics on Small-Signal and Noise Moeling 0.35μm Gate Length MOS Transistors,” IEEE Transactions on Electron Devices, Vol. 49, NO. 5, May 2002, pp.871-880.
[4] Trocls Email Kolding, “On-Wafer Calbration Techniques for Giga-Hertz COMS Measurements,” IEEE Int. Conf. On Microelectronic Test Strucures, Vol 12, March 1999, pp.105-110.
[5] Steve Hung-Min Jen, Christian C. Enz, David R. Pehlke, Michael Schroter, and Bing J. Sheu, “Accurate Modeling and Parameter Extraction for MOS Transistors Valid up to 10 GHz,” IEEE Transactions on Electron Devices, Vol. 46, NO. 11, November 1999, pp.2217-2227.
[6] Christian Enz, “An MOS Transistor Model for RF IC Design Valid in All Regions of Operation,” IEEE Transactions On Microwae Theory and Techniques, Vol. 50, No. 1, January 2002, pp.342-359.
[7] Ewout P. Vandamme, M. M. –P. Schreurs, and Cees van Dinther, “Improved Three-Step De-Embedding Method to Accuratey Account for the Influence of Pad Parasitics in Silicon On-Wafer RF Test- Structures,” IEEE Transactions on Electron Devices,Vol. 48, No. 4, April 2001, pp.737-742.
[8] Troels Emil Kolding, “A Four-Step Method for De-Embedding Gigahertz On-Wafer COMS Measurements,” IEEE Transactions on Electron Devices, Vol. 49, NO. 4, April 2000, pp.734-740.
[9] E. McShane and K. Shenai, “RF De-Embedding Technique for Extracting Power NOSFET Package Parasitics,” IEEE, 2000, pp.55-59.
[10] Luuk F. Tiemeijer and Ramon J. Havens, “A Calibrated Lumped-Element De-Embedding Technique On-Wafer RF Characterizaion of High-Quality Inductors and High-Speed Transistors ,” IEEE Transactions on Electron Devices. 2003, pp.1-8.
[11] Guillermo Gonzalez, Microwave Transistor Amplifiers Analysis and Design, Prentice-Hall, second edition, 1997.
[12] Trocls Email Kolding, Ole Kiel Jensen, and Torben Larsen, “Ground-Shielded Measuring Technique for Accurate On-Wafer Characterizaion of RF CMOS Devices,” IEEE ICMTS. 2000, pp.246-251.
[13] M. Jamal Deen and Chih-Hung Chen, “The Impact of Noise Paramter De-Embedding on the High-Frequency Noise Modeling of MOSFETs,” IEEE Int. Conf. On Microelectronic Test Strucures, Vol 12, March 1999, pp.34-39.
[14] Adem Aktas and Mohammed Ismail, “Pad De-Embedding in RF CMOS,” IEEE Circuits ＆ Devices, MAY 2001, pp.8-11.
[15] Elmar Gondro, Oskar Kowarik, Gerhard Knoblinger, and Peter Klein, “When do we need Non-Quasistatic CMOS RF-Models？,” IEEE Custom Integrated Circuits Conference, 2001, pp.377-380.
[16] Y. Tsivids, Operation and modeling of the MOS transistor, McGraw-Hill Co., second edition, Singapore, 1999.
[17] Ickjin Kwon, Minkyu Je, Kwyro Lee, and Hyungcheol Shin, “A Simple and Analytical Parameter-Extraction Method of a Microwave MOSFET,” IEEE Transactions On Microwae Theory and Techniques, Vol. 50, No. 6, June 2002, pp.1503-1509.
[18] Christian C. Enz, and Yuhua Cheng, “MOS Transistor Modeling for RF IC Design,” IEEE Transactions on Solid-State Circuits, Vol. 35, No. 2, FEBRUARY 2000, pp.186-201.
[19] E. Morifuji, H. S. Momose, T. Ohguro, T. Yoshitomi, H.Kimijima, F. Matsuoka, M. Kinugawa, Y.Katsumata, and H.Iwai, “Future Perspective and Scaling Down Roadmap for RF COMS,” Symposium on VLSI Circuits Digest of Technical Papers, 1999, pp.165-166.
[20] Behzad razavi, Ran-Hong, and Kwing F. Lee, “Impact of Distributed Gate Resistance on the Performance of MOS Devices,” Transactions on Circuits and Systems-I:Fundamental Theory and Applications,Vol. 41, NO. 11, November 1994,pp.750-754.
[21] Joacim N. Burghartz, “Tailoring Logic COMS for RF Applicatons,” IEEE 2001, pp.150-153.
[22] Jaime PL’a, Wayne Struble, and Francois Colomb, “On-Wafer Calibration Techniques for Measurement of Microwave Circuits and Devices on Thin Substrates,” IEEE MTT-S Imernational Microwave Symposium Digest, Orlando, Florida, USA, MAY 1995 ,VOL. 3, pp.1045-1048.
[23] Davd Lovelace, Julio Ccosta and Natalino Camilleri, “Extracting Small-Signal Model Parameters of Silicon Mosefet Transistors,” IEEE MTT-S Digest, 1994, pp.865-868.
[24] Tero Kaija and Eero Ristolainen, “Scalable Ground-Shielded Open Fixture Applied to De-Embedding Techniques,” IEEE ICMTS. 2003, pp.85-90.
[25] Roberto Sung, Peter Bendix, and Mukunda B. Das, “Extraction of High-Frequency Equivalent Circuit Parameters of Submicron Gate-Length MOSFT’s,” IEEE Transactions on Electron Devices, Vol. 45, NO. 8, August 1998, pp.1769-1775.
[26] Yuhua Cheng, Chih-Hung Chen, Mishel Matloubian, and M. Jamal Deen, “High-Frequency Small Signal AC and Noise Modeling of MOSFETSs for RF IC Design,” IEEE Transactions on Electron Devices, Vol. 49, NO. 3, March 2002, pp.400-408.
[27] W.Liu, R. Gharpurey, M. C. Chang, U. Erdogan, R. Aggaral, and J. P. Mattia, Texas Instruments, “RF MOSFET Modeling Accouting for Distributed Substrate and Channel Resistaces with Emphasis on the BSIM3v3 SPICE Model,” IEEE IEDM, 1997, pp.309-312.
[28] Xiaodong Jin, Jia-Jiunn Ou, Chih-Hung Chen, Weidong Liu, M.Jamal Deen, Paul R. Gray, and Chenming, “An Effective Gate Resistance Model for COMS RF and Noise Modeling” IEEE IEDM, 1998, pp.961-964.
[29] Timothy c. Kuo, “RFCMOS Extensio Model Accurate Up to 40 GHz with Distributed Juncton Diode,” IEEE Custom Integrated Circuits Conference, 2000, pp.205-208.
[30] M. Jamal Deen and Chih-Hung Chen,Yuhua Cheng, “MOSFET Modeling for Low Noise, RF Circuie Design,” IEEE Custom Integrated Circuits Conference, 2002, pp.201-208.
[31] Shey-Shi Lu, Chinchun Meng, To-Wei Chen, and Hsiao-Chin Chen, “The Origin of the Kink Phenomenon of Transisor Scattering Pasameter S22,” IEEE Transactions On Microwae Theory and Techniques, Vol. 49, No. 2, February 2001, pp.333-340.
[32] Volker Sommer, “A New Method to Determine the Source Resistance of FET form Measured S-Parameters Under Actve-Bias Conditions,” IEEE Transactions On Microwae Theory and Techniques, Vol. 43, No. 3, March 1995, pp.504-510.
[33] R.Anholt and S.Swirhun, “Equivalent-Circuit Parameter Extraction for Cold GaAs MESFET’s, ” IEEE Transactions On Microwave Theory and Techniques, Vol. 39, No. 7, July 1991, pp.1243-1247.
[34] Yuhua Cheng, and Mishel Matloubian, “High Frequency Characterization of Gate Resistance in RF MOSFETs,” IEEE Electron Device Letters,Vol. 22, NO. 2, February 2001,pp.98-100.
[35] Yuhua Cheng, and Mishel Matloubian, “Frequency-Dependent Resistive and Capacitive Components in RF MOSFETs,” IEEE Electron Device Letters,Vol. 22, NO. 7, July 2001,pp.333-335.
[36] Yo-Sheng Lin, Shey-Shi Lu, Tai-Hsing Lee and Hsiao-Bin Liang, “Characterization ad Modeling of Small-Signal Substrate Resistance Effect in RF COMS,” IEEE Radio Frequency Integrated Circuits Symposium, 2002, pp. 315-318.
[37] Seonghearn Lee, Hyun Kyu Yu, Cheon Soo Kin,Jin Gun Koo, and Kee Soo Nam, “A Novel Approach to Extracting Small-Signal Model Parameters of Silicon MOSFET’s,” IEEE Microwave and Gided Wave Letters, Vol. 7, NO. 3, March 1997,pp.75-77.