本研究使用偏氟-三氟乙烯共聚物/鋯鈦酸鋇絕緣層於五環素有機薄膜電晶體，結合鐵電性及高介電常數的優點展現出良好的電晶體特性及記憶體特性，如: 低操作偏壓(±10V) 、高場效載子遷移率(4.65 cm2V-1s-1)以及大記憶視窗(6.7V)。透過極化量測、XRD分析來確認鐵電層在分層狀況下能有效表現出鐵電特性。並且藉由漏電流量測、AFM分析能有效抑制漏電流，改善表面接面。而藉由分層結構的改變可以發現記憶體整體臨界電壓的偏移，甚至影響整體元件的操作模式，透過模型的探討可以更進一步分析分層介面操作機制。

Pentacene-based organic thin-film transistors with ferroelectric P(VDF-TrFE)/BZT as gate dielectrics were demonstrated. By combining the advantages of ferroelectric material and high-κ dielectric, the devices show the good performances of both transistor and memory characteristics. Electrical properties of pentacene-based thin-film transistors show low operation voltage of ±10 V, high field-effect mobility of 4.65 cm2V-1s-1, and large memory window of 6.7V in ±10V.
The ferroelectricity can be confirmed by polarization and X-ray diffraction measurements. Moreover, the leakage current and the interface of pentacene are effectively improved by the structure of hybrid P(VDF-TrFE)/BZT. Finally, the shift of the threshold voltage can be observed by the variety of insulator structure from sandwich to hybrid structure. The role of interface between P(VDF-TrFE) and BZT was discussed by the proposed mechanisms.

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