本論文主要探討利用濺鍍系統成長非晶氧化銦鋅之薄膜，並在製程中調整不同濃度的氧氣濃氣比例來得到不同特性之薄膜。在元件的部分，首先我們應用非晶氧化銦鋅薄膜做為主動層，並利用二氧化矽做為閘極介電層來製做薄膜電晶體，實驗結果得到最佳參數之薄模電晶體，其場效遷移率為8.71cm2/Vs，臨界電壓0 V，次臨界擺幅0.25 V/decade，6.8E4電流開關比。此外，我們發現不同的含氧量會對元件的光電特性造成影響，我們得到10%含氧量為最佳之參數結果。
在實驗的第一部分，我們使用二氧化矽做為非晶氧化銦鋅薄膜電晶體的閘極介電層，在實驗第二部份我們使用多氮化矽對二氧化矽閘極介電層做了改善。在室溫下得到場效遷移率為13.67cm2/Vs，臨界電壓1.27V，次臨界擺0.261V/decade，1.57E6電流開關比。與一般的二氧化矽介電層比較，經由多氮化矽改善之介電層可以達到更高電流開關比，此外，我們也使用高介電常數的氧化鋁取代二氧化矽做為閘極介電層，在室溫下得到場效遷移率為34.15 cm2/Vs，臨界電壓2.51，次臨界擺幅0.2，7.46E6電流開關比。最後我們也對介電層的可靠度做探討。
在非晶氧化銦鋅薄膜光電應用的部分，我們利用10%含氧量的非晶氧化銦鋅薄膜分別製作出光檢測器以及光電晶體並比較其優孰。在光檢測器部分，其在5V的偏壓下光暗電流比可達到 7.21E2,響應拒斥比達到 325。在光電晶體部分，其在-5V的偏壓下光暗電流比可達到2.54E4,響應拒斥比達到1.2E6, 其結果顯示光電晶體具有較良好的光電性。
氧化銦鋅材料本身很容易形成氧空缺,對元件來說,會有一個漏電路徑,造成漏電流的上升。我們提出一個簡單的辦法來修飾氧化銦鋅表面的氧空缺, 利用自主装單層磨生長在氧化鋅銦光檢測器並鈍化之，經過 APTMS的修飾後, 我們發現光檢測器的漏電流下降了近一個準位且響應拒斥比從325提升到728。

In this thesis, we use RF sputtering system to fabricate a-IZO thin film and vary the oxygen flow to obtain IZO thin films of different electrical characteristics. In terms of electrical device, we first fabricate the TFT applying the a-IZO thin film as active layer and SiO2 as gate dielectric layer. We obtain the optimized TFT having the mobility of 8.71 cm2/Vs, threshold voltage of 0V, subthreshold swing of 0.25 V/decade and Ion/Ioff ratio of 6.8×104. In addition, we find that the devices have different electrical characteristic with different oxygen ratio. And we obtain the optimized IZO thin film under 10% oxygen ratio.
In the first part of the experiment, we fabricate the a-IZO thin film transistor using SiO2 as gate dielectric. In second part, we make an improvement on the SiO2 dielectric with SiN buffer layer. The TFT using SiN/SiO2 gate dielectric has the mobility of 13.67 cm2/Vs, threshold voltage of 1.27 V, subthreshold swing of 0.216 V/decade and Ion/Ioff ratio of 1.57E6 . Compared with normal SiO2 dielectric layer, we obtain higher Ion/Ioff ratio after impact SiN improvement. In addition, we also replace SiO2 with high κ material Al2O3 as gate dielectric. The Al2O3 TFT has the mobility of 34.15 cm2/Vs, threshold voltage of 2.51V, subthreshold swing of 0.2 V/decade and Ion/Ioff ratio of 7.36E6. At last, we also investigate the reliability of these dielectric
In the part of a-IZO thin film photoelectrical application, we fabricate the IZO MSM photodetector and IZO thin film phototransistor with IZO thin film of 10% oxygen ratio. The photodetector has Ion/Ioff ratio of 7.21E2 and rejection ratio of 325 under 5V bias. The phototransistor has the Ion/Ioff ratio of 2.54E4, rejection ratio of 1.2E6 under -5V bias. The result indicates that the phototransistor has the better photoelectrical characteristic than photodetector.
As we know, IZO is easy to form oxygen vacancy, which could yield a leakage current path for IZO device. Therefore, a simple surface treatment process is reported for improving its surface defects. We deposit 3-aminopropyltrimethoxysilane (APTMS) onto the IZO MSM photodetector to passivate its surface. After APTMS modification, the dark current of IZO phtodetector has decrease nearly an order and the rejection ratio increase from 325 to 728.

Chapter 1

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Chapter 2

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Chapter 3

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Chapter 4

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Chapter 5

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