本文以研究300mm晶圓在快速熱處理爐內的晶圓有效放射率為目的，考慮中山科學研究院正在發展中的快速熱處理機台腔體內的熱傳，本文以蒙地卡羅法（MCM）計算加熱燈、腔體及晶圓之間的熱輻射交換，其結果再結合晶圓有效放射率之定義，以求得快速熱處理過程中晶圓有效放射率隨晶圓徑向位置之分佈，然後以相關文獻及有效放射率的定義加以分析、探討。
　　我們由模擬結果得知：當反射盤放射率較小時，晶圓有效放射率與實際晶圓放射率之差距也較大。此時，反射盤反射率較大，亦即反射盤的反射增強晶圓放射率對於晶圓有效放射率的影響。當晶圓放射率較低時，由於被晶圓下表面反射之加熱燈入射通量與晶圓黑體放射功率之比率較大的原因，加熱燈入射通量的影響不僅明顯，且影響較大之徑向位置亦有往中心(r= 0m)移動的現象。同樣地，隨著晶圓與保護環間隙由0.003m~0.0001m逐漸減少時，在實際加熱過程中，所有表面入射通量對於晶圓有效放射率之影響較大的徑向位置，有往晶圓外緣靠近的趨勢。

　　The purpose of this research is to examine the effective emissivity of a 300mm wafer in rapid thermal processing (RTP). The heat transfer in the RTP furnace chamber under development at CSIST is considered. This study adopts the Monte Carlo Method (MCM) to calculate radiative heat exchange among the chamber, the lamps and the wafer. Then combining the above result into the definition of effective emissivity of wafer, we obtain the effective emissivity distribution versus radial positions on wafer. Other definitions of effective emissivity in the literatures are also investigated.
　　The simulation results show that as follow: when the emissivity of reflector is lower, the differences between the effective emissivity of wafer and the intrinsic emissivity of wafer is higher. At this time, the reflectivity of reflector is greater than the wafer, and it enhanced the influence of effective emissivity versus intrinsic emissivity of wafer. Otherwise, when the emissivity of wafer is lower, the reflected irradiation of heating lamps by the bottom surface of wafer is greater than blackbody emissive power of the wafer. The influence of the irradiation is not only obvious, but also the position to the range of higher influence in radial direction has the ambulatory phenomenon toward center (r= 0m). Similarly, by the gap between wafer and guard ring reduced from 0.003m to 0.0001m gradually, the position in radial direction to the effect of versus irradiation of all surfaces in the RTP enclosure has the trend of going toward outside wafer.

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