有機薄膜電晶體被提出已有30餘年，在這近年來被大家廣為重視及研究，主要是他有著需多比無機半導體的優點，例如低溫、低成本的製程，可大面積製作以及可撓式等等優點。本篇利用有機界認定較穩定受歡迎的材料五環素做為有機電晶體的主動層，並使用鈣鈦礦、鐵、鈷、鎳、吉利丁等化合材料利用溶液式製程手法開發配製出許多高介電係數材料，然後應用在薄膜電晶體與電阻式記憶體上。以溶液式製程配製出高介電常數材料主要優點為:低成本的製程、低溫製成、可應用在大面積及可撓性基板、以及在有機電晶體上有良好的壓電材料特性可降低電晶體的操作電壓；使用溶膠凝膠法合成出鋯鎳酸鋇、硝酸鈷吉利丁、硝酸鐵吉利丁，我們將這些材料使用一般玻璃基板、氧化銦錫玻璃基板、可撓性基板、紙基板等製作成薄膜電晶體與電阻式記憶體元件 ，更進而使用降低環境污染的紙基板製作出薄膜電晶體；在鋯鎳酸鋇當介電層材料的薄膜電晶體中有良好的電特分別為: 起始電壓 -1.1 V、載子移動率 5.2 〖cm〗^2/Vs、次臨界擺幅 0.4 V/decade、電流開關比〖10〗^4，而使用硝酸鈷吉利丁當氧化層材料的電阻式記憶體中也有不錯的電阻式記憶體特性表現，最後將硝酸鐵吉利丁當介電層材料配合使用對環境友善的紙基板製作出薄膜電晶體，在本身使用溶液式製程並在紙基板上製作出元件這頗為困難的實驗組合我們也將其克服並有不錯良好的電晶體特性為: 起始電壓 -1.4 V、載子移動率 8 〖cm〗^2/Vs、次臨界擺幅 0.6 V/decade、電流開關比〖10〗^3，這些在純紙的基板上的電特性是相當不錯的結果。

我們使用的這些化合材料配製出不同新穎材料不僅是對薄膜電晶體及電阻式記憶體突顯出良好特性，加上又使用紙基板與一般的無機製程相比更是對環境有較低的汙染，隨著近年來環保意識的抬頭各界都越來越重視，因此本篇的研究是非常有利於環境更對日後的有機元件發展很高度的延展性。

Organic thin film transistors have been proposed for more than 30 years. In recent years, they have been widely considered and studied by people. Mainly, it has many advantages over inorganic semiconductors, such as low temperature and low cost processes, huge production, good flexibility and so on. This article uses pentacycline that the organic community has identified as a more stable material as the active layer of organic transistors, and uses the compound materials such as perovskite, iron, cobalt, nickel, and gelatin to develop and formulate many solutions by solution process. Then the high dielectric constant material is applied to the thin film transistor and the resistive memory.
The main advantages of formulating high dielectric constant materials in a solution process are: low cost process, low temperature fabrication, application in large area and flexible substrates, and reduced operating voltage by good piezoelectric material properties on organic transistors. The sol-gel method is used to synthesize zirconium lanthanum zirconate, cobalt nitrate, and iron nitrate. These materials are formed into a thin film transistor and Resistive random-access memory element using a general glass substrate, an indium tin oxide glass substrate, a flexible substrate, a paper substrate etc., and further a thin film transistor is formed using a paper substrate which reduces environmental pollution. When zirconium lanthanum hydride is used as a thin film transistor of a dielectric layer material, a good electrical characteristic is: starting voltage -1.1 V, carrier mobility 5.2 〖cm〗^2/Vs, sub-threshold swing 0.4 V/decade, current switching ratio 〖10〗^4. Also using cobalt nitrate gelatin as the oxide material in the resistive memory also has a good resistive memory characteristic. Finally, with a solution process, the iron nitrate gelatin is used as a dielectric layer material to produce a thin film transistor on an environmentally friendly paper substrate. It is a very difficult experimental for components combination on the substrate. The difficulty has been overcame and good transistor characteristics are: Starting voltage -1.4 V, carrier mobility 8 〖cm〗^2/Vs, sub-critical pendulum 0.6 V/decade and the current-to-switch ratio are 〖10〗^3. These electrical characteristics on the substrate of pure paper are quite good.
The different materials we used to formulate different novel materials not only highlight the good characteristics of the thin film transistor and the resistive memory, but also have lower environmental pollution than the general non-mechanical process using the paper substrate. With the increasing awareness of environmental protection in recent years, this study is very beneficial to the environment and is highly scalable to the future development of organic components.

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