研究生: |
管家翎 Kuan, Chia-Ling |
---|---|
論文名稱: |
探討提升氧化鋅薄膜之直流輸出擦伏奈米發電機效率與機制 Enhancement Mechanism of ZnO thin-film-based Direct Current Tribovoltaic Nanogenerator |
指導教授: |
劉全璞
Liu, Chuan-Pu |
學位類別: |
碩士 Master |
系所名稱: |
智慧半導體及永續製造學院 - 半導體封測學位學程 Program on Semiconductor Packaging and Testing |
論文出版年: | 2025 |
畢業學年度: | 113 |
語文別: | 中文 |
論文頁數: | 85 |
中文關鍵詞: | 摩擦伏特效應 、直流型摩擦奈米發電機 、氧化鋅鎂薄膜 、銅摻雜氧化鋅 |
外文關鍵詞: | Tribovoltaic effect, ZnO thin film, MgZnO thin film, Cu-doped ZnO, DC-TVNG |
相關次數: | 點閱:53 下載:0 |
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摩擦奈米發電機(TENG)是一種新型發電技術,透過材料的微觀結構,在機械運動的過程中產生靜電效應,進而將機械能轉換為電能。與傳統發電機不同,TENG具有體型小巧輕便、易於集成和低成本生產等優勢,並且不需外部能源輸入,在現今能源短缺的時代中,摩擦奈米發電機可以作為一項綠色能源的選擇,並且特別適用於穿戴式設備、智能感測器與自動控制系統等應用領域。
傳統交流電摩擦奈米發電機(AC-TENG)雖然具備高輸出電壓與低輸出電流的優點,但由於其工作電阻非常高,限制了其實際應用,因此,近年來直流型摩擦奈米發電機(DC-TENG)成為研究熱點,其核心基制式基於摩擦伏特效應(Tribovoltaic effect),透過半導體與半導體(S-S)或者是半導體和金屬(M-S)接觸的摩擦滑動,利用對擦材料的費米能階差異產生內建電場,進一步分離摩擦所激發的電子電洞對,進而實現直流輸出。
本研究將藉由使用金屬-半導體接觸與半導體-半導體接觸兩種摩擦滑動形式,半導體材料選擇有N/P型矽基板、氧化鋅薄膜、銅摻雜氧化鋅摩擦在氧化鋅鎂,每種材料各自的功函數與費米能階大小不盡相同,因此會藉由直流型摩擦奈米發電機之輸出電壓電流大小,並探討不同材料之間摩擦後,影響電性輸出之因素,分析材料間的電子傳輸型為,以及不同對擦元件的材料性質如何影響摩擦伏特效應之機制理論分析。
A triboelectric nanogenerator (TENG) is an innovative technology that converts mechanical energy into electrical energy through friction-induced charge transfer. Based on the microstructural properties of materials, TENG utilizes surface interactions during mechanical motion to generate electrostatic charges, ultimately transforming kinetic energy into electrical energy. The working principle of TENGs is based on the triboelectric effect, where materials with different electron affinities exchange charges upon contact and separation. These triboelectric charges create a potential difference, driving an electrical current through an external circuit. Unlike conventional power generators, TENGs offer significant advantages, including compact size, lightweight design, easy integration, and low production costs. Additionally, they do not require an external power source, making them a promising alternative in the current era of energy shortages, TENGs are ideal for self-powered systems in wearable devices, intelligent sensors, biomedical devices and autonomous control systems. Their ability to generate electricity from small mechanical movements makes them an attractive solution in an era where sustainable and green energy sources are in high demand.
Traditional alternating current (AC) triboelectric nanogenerators exhibit notable advantages, such as high output voltage and low output current. However, a significant drawback of AC-TENGs is their high output impedance, which imposes considerable limitations on their practical applications, particularly in energy harvesting and storage. Additionally, AC-TENGs require rectification circuits to convert their AC output into DC, which adds complexity and energy loss to the system. To overcome this challenges, direct current (DC) triboelectric nanogenerators(DC-TENGs) have been developed, which provide a more direct and stable energy output. The working mechanism of DC-TENGs is fundamentally different from that of AC-TENGs, as it leverages the tribovoltaic effect, a newly discovered charge generation process that occurs at the interface of two materials with differing Fermi levels.
The core mechanism of DC-TENG is based on the tribovoltaic effect, which occurs when a semiconductor-to-semiconductor (S-S) or metal-to-semiconductor (M-S) contact is subjected to frictional motion. The key principle relies on the difference in Fermi levels between the two triboelectric materials. During the friction process, the energy transfer between the materials induces electron-hole pair generation, and the built-in electric field at the interface facilitates charge separation, thereby producing a continuous DC output. This process differs significantly from conventional TENGs, which rely solely on electrostatic induction. Instead, the tribovoltaic effect directly generates a flow of charge carriers, making it a promising approach for improving energy conversion efficiency in triboelectric nanogenerators.
This study aims to explore the electrical output characteristics of DC-TENGs by employing two types of triboelectric sliding configurations: Metal-Semiconductor (M-S) Contact and Semiconductor-Semiconductor (S-S) Contact, and for the semiconductor materials, the following components are selected : N-type and P-type silicon substrates, Zinc oxide thin films, Copper-doped zinc oxide and Magnesium-doped zinc oxide thin films. Since each of these materials has a distinct work function and Fermi level, their triboelectric interactions are expected to exhibit different electrical behaviors. To comprehensively analyze the tribovoltaic effect, this research focuses on the output voltage and current characteristic of DC-TENGs under different triboelectric material pairings.
There are several key factors that influence the efficiency and effectiveness of DC-TENGs. First is Work function Fermi level differences, the difference in work function between two materials determines the strength of the built-in electric field, which affects the charge separation efficiency, a larger Fermi level mismatch generally results in a higher output voltage. Second is Charge carrier generation and transport, materials with higher electron mobility allow faster charge transport, leading to improved current output, semiconductor doping can alter carrier concentration, impacting charge separation efficiency. Third one is Interface and Surface states, the presence of interface states and surface roughness can impact charge transfer, a smooth interface enhances carrier separation, while a rough interface increases charge trapping, affecting efficiency. The last is Contact force and sliding speed, higher contact pressure increases the effective contact area, enhancing charge transfer, faster sliding speed induce more frequent charge generation cycles, boosting power output.
The key research objectives include investigating how friction-induced charge transfer caries based on material properties, examining the impact of different triboelectric material combinations on the magnitude of electrical output and understanding how semiconductor doping influences charge generation and separation in triboelectric interfaces. The findings from this study will contribute to a deeper theoretical understanding of DC-TENGs and their dependence on material properties. Moreover, practical advancements in energy harvesting technologies can be achieved, enabling improved energy storage integration through stable DC output, development of self-powered electronic systems, reducing reliance on conventional batteries, enhanced performance of wearable and flexible electronics, providing a sustainable energy solution.
By optimizing, the tribovoltaic effect represents a significant breakthrough in triboelectric nanogenerator technology, enabling direct DC power generation with improved efficiency. By selecting optimal semiconductor materials and understanding the fundamental mechanisms of charge transfer, researchers can further enhance DC-TENG performance for real-world applications. Future research can focus on developing advanced material engineering strategies to optimize charge transport and carrier mobility, exploring novel semiconductor heterojunctions to increase Fermi level differences and improve power output, integrating DC-TENGs with energy storage systems such as super capacitors and batteries to create more robust energy solutions. With continuous advancements in material science and device engineering, DC-TENGs have the potential to revolutionize self-powered electronics, contributing to a sustainable and energy efficient future.
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