本論文之主要目的在於探討氮砷化銦鎵化合物半導體之基本特性，並研究發展此種與鍺或砷化鎵晶格匹配且能隙接近1 eV的材料，因其具有相當大的潛力可望作為下一個世代高效率太陽能電池的第三個接面，以提升整體轉換效率。
　　從在砷化鎵基板上成長氮砷化銦鎵磊晶層開始，我們利用高解析X射線繞射儀與紫外光/可見光分光光譜儀等量測設備分析成長材料之銦與氮的含量組成與能隙大小。為了使氮砷化銦鎵之吸收波長達到1 eV並同時降低晶格常數的不匹配，必須經由TMIn/III與DMHy/VT比例的調整精確控制銦與氮含量之組成。藉由降低磊晶溫度、適當的成長速率與相當高的DMHy/VT比例可以使得不易溶入的氮原子組成提升。其次，我們利用TMGa成長氮砷化銦鎵磊晶層，除了從量測結果顯示其具有較佳的結晶品質外，也可避免因TEGa與DMHy之間強烈的共裂解效應而有大幅降低成長速率的問題。在經由一系列磊晶參數的調整後，我們成功地在600°C、575°C、550°C與525°C等不同磊晶溫度下於砷化鎵基板上成長晶格匹配且能隙分別為1.037 eV、1.022 eV、0.967 eV以及1.039 eV的氮砷化銦鎵半導體。但值得注意的是，在525°C這樣低溫的成長條件下，將大幅降低磊晶成長速率，且樣品同時會有較為粗糙的表面。
　　於是，我們利用各個不同溫度下成長的氮砷化銦鎵作為本質層以吸收太陽能頻譜長波長的區段，製作雙異質接面p-GaAs/i-InGaAsN/n-GaAs太陽能電池。量測元件效率顯示，以550°C所成長的氮砷化銦鎵磊晶層具有較佳的光電特性，使得太陽能電池之短路電流密度與轉換效率分別可到達11.56 mA/cm2與1.79%。由於氮砷化銦鎵材料本身的特性限制轉換效率的提升，因此我們更進一步地嘗試增加吸收層厚度或減少其含氮量以最佳化元件結構。當吸收層含氮量由3.3%減少至2.8%時，元件短路電流密度將有34.9%的增加幅度並使轉換效率提升至2.47%。另一方面，將吸收層厚度從600 nm增加至1.5 μm時，太陽能電池之短路電流密度更有高達46.9%的提升並增加至16.98 mA/cm2，轉換效率可達2.69%。
　　在未來，我們可以嘗試著將所成長的氮砷化銦鎵太陽能電池作為第三個接面應用在InGaP/GaAs/1 eV/Ge多接面太陽能電池元件結構中，更進一步地提升整體的效率。

　　The main purpose of this thesis is to investigate the dilute-nitride alloys and develop the InGaAsN materials lattice-matched to GaAs or Ge with near 1 eV bandgap for the use as a third-junction in the next generation of ultrahigh-efficiency four-junction solar cells.
　　In the study of growing InGaAsN layers on GaAs substrates by MOVPE, high resolution X-ray diffraction and UV-VIS-NIR spectrophotometer were performed to characterize the epitaxial layers including the In, N composition and the material bandgap. To extend the absorption wavelength to 1 eV and reduce the lattice constant mismatch, the In and N content must be accurately controlled by TMIn/III ratio and DMHy/VT ratio. Using low temperature, moderate growth rate and high DMHy/VT ratio would enhance N incorporation. In addition, the use of TMGa instead of TEGa as gallium source revealed the better crystal quality and it could avoid the strong co-pyrolysis effect dramatically decreasing the growth rate. Then, the InGaAsN bulk layers were successfully grown on GaAs substrates within less than 800 ppm lattice mismatch under various growth temperature of 600°C, 575°C, 550°C and 525°C with the bandgap of 1.037 eV, 1.022 eV, 0.967 eV and 1.039 eV respectively. Especially, epitaxial temperature of 525°C was too low to be used for the device application due to the quite slow growth rate and relatively rough surface.
　　Double heterojunction p-GaAs/i-InGaAsN/n-GaAs solar cells were also fabricated by introducing the InGaAsN intrinsic layer grown at different epitaxial temperatures to absorb the long wavelength region. In particular, the better optoelectronic properties of near 1 eV InGaAsN epilayer lattice-matched to GaAs could be obtained under the optimized growth temperature of 550°C, thus the short-circuit current density and conversion efficiency could reach 11.56 mA/cm2 and 1.79% respectively. Furthermore, we tried to optimize the device structure by increasing the absorption layer thickness to 1.5 μm and lowering the N content to 2.8% in the InGaAsN layer, the short-circuit current density could dramatically increase to 16.98 mA/cm2 and 15.59 mA/cm2 with the relative enhancement of 46.9% and 34.9% respectively, thus the energy conversion efficiency could be further improved to 2.69% and 2.47%.
　　In the future, our long-term goal is to develop the InGaP/GaAs/1 eV/Ge tandem solar cells and apply the InGaAsN-based solar cells fabricated in this thesis as the third-junction to further improve the energy conversion efficiency.

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