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研究生：	林憲章 Lin, Sian-Jhang
論文名稱：	以化學氣相沉積法於LiAlO2基板上成長具鐵磁特性之非極性Zn1-xCoxO磊晶薄膜 Growth of ferromagnetic and non-polar Zn1-xCoxO epitaxial films on LiAlO2 substrates using chemical vapor deposition
指導教授：	吳季珍 Wu, Ji-jen
學位類別：	碩士 Master
系所名稱：	工學院 - 化學工程學系 Department of Chemical Engineering
論文出版年：	2008
畢業學年度：	96
語文別：	中文
論文頁數：	130
中文關鍵詞：	稀釋型磁性半導體、鐵磁性、非極性氧化鋅
外文關鍵詞：	Diluted Magnetic Semiconductor(DMS), non-polar Zn1-xCoxO, Ferromagnetism
相關次數：	點閱：73 下載：1
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本研究採用thermal CVD法成功於LiAlO2(LAO)基板上成長非極性Zn1-xCoxO磊晶薄膜。Zn1-xCoxO薄膜之鈷含量可以藉由改變盛裝鈷有機金屬化合物器皿大小與反應物加熱溫度來調整。由XRD分析得知成長於LAO基板之Zn1-xCoxO薄膜具有沿m軸方向優勢成長。由XRD分析亦得知Zn1-xCoxO晶體之a軸長隨著鈷含量的增加而增加。而Raman光譜與XPS Co 2P3/2與2P1/2能譜分析則發現當Zn1-xCoxO薄膜之鈷含量(x)低於0.18時，薄膜中未有任何氧化鈷或鈷分離相之產生，顯示鈷於薄膜中乃取代氧化鋅結構中之鋅原子。另外，經吸收光譜分析得知Zn1-xCoxO薄膜具鈷離子於四面體晶格場的特性吸收峰，證實鈷的確取代氧化鋅結構中之鋅原子，且光學能隙隨鈷含量增加有紅位移現象。最後以超導量子干涉儀量測Zn0.89Co0.11O薄膜，得知測Zn0.89Co0.11O薄膜在室溫下具有鐵磁特性，且居禮溫度大於350K。

Non-polor (m-plane) Zn1-xCoxO epitaxial films have been successfully deposited on LAO substrate using thermal chemical vapor deposition. Co contents can be varied by the flux of the Co organo-metallic precursor through adjusting the diameter and the temperature of the Co source container. XRD analyses reveal the Zn1-xCoxO films grown on LAO substrates are preferentially oriented in the m-axis direction (non-polar plane). In addition, the a-axis length in the lattice of Zn1-xCoxO films increases with Co contents increases. Raman and XPS analyzes show there is no Co and cobalt oxide structures appearing in the m-plane Zn1-xCoxO films at low Co contents (x<0.18). The absorption spectra of the Zn1-xCoxO films show the appearance of the Co2+ characteristic absorption bands in the tetrahedral crystal field, confirming that Co2+ substitutes for Zn2+ in ZnO lattice. A redshift in the absorption edge of the m-plane Zn1-xCoxO film with Co content increasing is observed as well. Room temperature ferromagnetism in Zn0.89Co0.11O film is observed and its Curie temperature is higher than 350K.

總目錄
中文摘要	.................................................I
英文摘要.................................................II
致謝....................................................III
總目錄....................................................V
圖目錄....................................................X
表目錄................................................XVIII

第一章緒論................................................1
1-1 前言..................................................4
1-2 自旋電子學(Spintronics)...............................4
1-3 非極性氧化鋅特性......................................9
1-4 研究動機.............................................10

第二章基礎理論與文獻回顧.................................12
2-1 氧化鋅(ZnO)基本結構與特性............................12
2-2 成長非極性m-plane氧化鋅之基板........................16
2-3 化學沉積法(CVD method)...............................19
2-4 磁性來源與理論.......................................22
2-4.1 磁性的來源.........................................22
2-4.2 平均場理論(Mean Field Theory)......................23
2-5 磁性來源機制.........................................25
2-5.1交互巡迴式鐵磁性(Itinerant Ferromagnetism ).........25
2-5.2侷限載子式鐵磁性(Localized Carrier).................26
2-5.3雙交換耦合機制(Double Exchange).....................27
2-5.4束縛極化子模型(Bound Magnetic Polaron Model)........28
2-6 磁性總類.............................................30
2-6.1 磁滯曲線...........................................35
2-7 文獻回顧-氧化鋅為主之稀磁性半導體....................37
2-7.1 氧化鋅為主之摻雜Co元素之稀磁性半導體...............38
2-7.1-1氧空缺對鈷摻雜氧化鋅鐵磁性質的影響................42
2-7.1-2 載子濃度對n型ZnCoAlO薄膜鐵磁性質之影響...........44
2-7.1-3 Co 3d的價帶狀態對Zn1-xCoxO薄膜鐵磁性質之影響.....46

第三章 實驗參數與研究方法................................48
3-1 實驗流程.............................................48
3-2 系統設計.............................................48
3-2.1 反應氣體輸送裝置...................................49
3-2.2 Thermal CVD反應器..................................49
3-3 實驗材料.............................................50
3-3.1 反應物.............................................50
3-3.2 基板材料...........................................50
3-4 基板反應前處理.......................................50
3-5 實驗操作步...........................................51
3-6 分析與鑑定...........................................52
3-6.1 掃描式電子顯微鏡分析(SEM)..........................52
3-6.2電子背向繞射分析 (EBSD).............................52
3-6.3 X光繞射分析儀 (XRD)................................54
3-6.4拉曼光譜分析儀(Raman Spectroscopy)..................55
3-6.5 穿透式電子顯微鏡 (TEM).............................57
3-6.6紫外光-可見光吸收光譜儀(UV-Visible Absorption   
     Spectrometer)....................................	57
3-6.7 歐傑電子能譜儀(AES)................................59
3-6.8 X光光電子能譜儀(XPS)...............................60
3-6.9超導量子干涉磁量儀(Superconducting Quantum Interference Device SQUID)...............................62

第四章 結果與討論........................................64
4-1 成長純ZnO薄膜........................................65
4-2 DCo對成長Zn1-xCoxO薄膜的影響.........................66
4-2.1 AES組成分析與SEM表面型態分析.......................66
4-2.2 XRD分析............................................72
4-2.3 Raman 分析.........................................73
4-2.4.吸收光譜分析.......................................74
4-3鈷反應物溫度對Zn1-xCoxO薄膜的影響.....................80
4-3.1 XRD分析............................................80
4-3.2 Raman分析..........................................81
4-3.3吸收光譜分析........................................81
4-4成長溫度對成長Zn1-xCoxO薄膜的影響.....................87
4-5 TEM分析..............................................90
4-6 XPS化學組態分析......................................92
4-7 Zn1-xCoxO薄膜之磁性分析..............................96

第五章 總結論............................................98

第六章 參考文獻.........................................100
附錄....................................................106
                                    

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