自日人Nakamura先生於1990年成功研製出高亮度氮化鎵系列 LED以來，世人逐漸在些小小的亮點身上，看到未來世界光明的希望。於是投入大量的人力心血以及時間，在這種節能的科技之中，憑藉著前輩們的努力，成果亦十分豐碩。然則發展至今，我們不得不面對的問題除了持續的提升LED之外部量子效率之外，點亮過程中產生的廢熱，亦是影響其壽命及效率的關鍵。
因此發展出各式各樣的散熱製程模式，一般而言，對於GaN LED來說，散熱效率最好的製程，莫過於雷射剝離製程，其後不論是以bonding或是以electroplating接合金屬，其導熱率，將遠勝於本身Sapphire基板。而綜論前人論述，垂直結構LED在增加光取出效率之上，亦有其優點，位於底部的全面金屬反射鏡，將反射由多重量子井所發出，而方向向下的光，這是相對於傳統LED的ㄧ大優點，然則在ㄧ般LED製造過程中，不論是製程或者是封裝，往往伴隨著熱衝擊。高反射率的金屬反射鏡在經過熱處理的高溫衝擊之下，往往會發生反射率的下降，在此實驗中將以緩衝層Ni來解決熱衝擊下反射率下降的問題，以期提升出光效率，另外為配合Novel package的封裝方式，實驗中亦將探討高速電鍍銅的參數以及製程方式，透過田口法的實驗設計，可利用較簡單的實驗設計得到較佳的參數，進而幫助實驗Novel package的量產進程。最後將探討垂直式結構LED，以電鍍銅的方式製造其基板，而用三種不同的方式嘗試將其切分，最後得到以光阻遮擋，於掛鍍的過程中先行將銅分離乃為最佳之製作方式。

Since Nakamura succeeded in developing high power GaN based LED in 1990s, people around the world see the hope of bright future on these tiny spots day by day. Then large amount of resource and researchers are devoted into such kind of energy-conserving science and technology. By the efforts of the elders, the achievement is also very rich. Until today the challenge we get is not only increasing the external efficiency of LEDs but also need to solve the problem that excess heat damage LED chips during high power operation which also affect the life time and efficiency of LEDs a lot.
So there are plenty of process focus on heat dissipation were successfully developed, generally speaking, as for GaN LED , there is nothing better than LLO in heat dissipation process hereafter no matter with bonding or electroplating, the heat conduction of metal will be better than Sapphire originally. According to the papers presented before, vertical structures LEDs take advantages in light extraction. Due to the full surface metal reflector, the light emitted downward generated by multi-quantum well would be reflected and escaped from the crystal at the top surface. However, no matter in the conventional or LLO processes the annealing processes are always accompany with thermal impacts and the reflectivity of metal reflector would drop down with these processes. In the experiment, Ni layer was used as a buffer layer to stop the diffusion of metal during annealing process, and increase the light extraction efficiency at the same time. Second part is about high deposition rate of copper electroplating, by the help of Taguchi method use the fewest number of experiments and get the best recipe to realize the mass production of Novel packages. Finally the singulation of LLO LEDs with copper substrates has been discuss, after try three different methods define each chip by photo-resistance before rack plating is the best choice to separate each chip with copper substrates without damage their crystal quality.

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