本論文主要以開發新型的氧化物系螢光材料並研究其特性為重點，在主體晶格選擇上以尖晶石結構的MgGa2O4為基礎，分別添加稀土金屬離子Eu3+與Tb3+作為活化劑發光中心，並將主體成份的改變與採用不同製程比較，可將本研究分為四大部分：(1)擬溶膠-凝膠法製備MgGa2O4:Eu3+、(2) 擬溶膠-凝膠法製備MgxZn1-xGa2O4:Eu3+、(3) 擬溶膠-凝膠法與固相反應法製備MgIn2-xGaxO4:Eu3+及(4) 擬溶膠-凝膠法製備MgGa2O4:Tb3+等系列螢光粉體，並針對其光致發光特性進行研究。
　　由實驗結果顯示，利用溶膠凝膠法製備的MgGa2O4:Eu3+螢光粉體，在600℃即形成MgGa2O4，並且在600~900℃之間皆為穩定的MgGa2O4單一相。而在394nm光源的激發下，MgGa2O4:Eu3+ 發出612nm的紅光屬於Eu3+離子的電偶極躍遷(5D07F2)，顯示Eu3+離子在晶格中佔據非對稱中心位置，而光譜亦有濃度消淬的現象發生。此外，以900℃煆燒5小時的MgGa2O4:5%Eu3+粉體則具有最佳的發光強度。
將Zn離子的導入MgGa2O4結構中以取代Mg離子，對粉體結晶性有顯著的提升作用，但發光強度卻隨之下降。在MgxZn1-xGa2O4:Eu3+中，其激發光譜明顯受到晶格場影響而變化，但發光特性則與MgGa2O4:Eu3+相似。分別在394與464nm光源下激發，均發現MgGa2O4:5%Eu3+具有較好的發光強度，顯示出在高Mg含量之下，螢光粉體具有較高的發光效率。
　　在第三部份，藉由將In離子導入MgGa2O4之結構中以取代Ga離子，發現使用擬溶膠凝膠法或固相反應法均要在1300℃才有尖晶石結構之MgIn2-xGaxO4形成。在發光特性方面，MgIn2-xGaxO4:Eu3+的激發光譜顯示出異常現象，完全沒有Eu3+-O2-交互作用而產生的電荷轉移吸收帶的出現，僅在467nm附近有Eu3+離子的內層軌域吸收峰。在467nm光源激發下MgIn2-xGaxO4:Eu3+則發出615nm的亮紅光，同樣屬於5D07F2電偶極躍遷，但其強度則遠較MgxZn1-xGa2O4:Eu3+來的高。在此系列中發現以MgIn1.8Ga0.2O4:5%Eu3+之成份，具有最佳發光強度。
　　而在最後部份，則不同於Eu3+活化的螢光粉體以屬於4f內軌域直接激發的方式發光；MgGa2O4:Tb3+螢光粉體由於Tb3+離子之4f-5d躍遷吸收與晶格吸收波長的重疊，導致主體晶格與發光離子間發生能量轉移，而使Tb3+離子以間接激發方式發光，在晶格吸收帶附近251nm光源激發下，MgGa2O4:Tb3+螢光粉體只發出550nm的綠光，屬於Tb3+的5D47F5的電子躍遷。
　　在本研究中所製備的不同螢光粉體，以MgGa2O4:5%Eu3+具有最佳的發光顏色，非常接近National Television System Committee（NTSC）標準紅光，而MgIn1.8Ga0.2O4:5%Eu3+螢光粉體則具有最大之發光強度。

　The object of this study is to search new oxide based phosphors. The spinel crystallite, MgGa2O4, was selected as the host material and two rare earth ions, Eu3+ and Tb3+, were introduced as activators. With the substitution of matrix components and 2 kinds of synthesis processes employed, this study could be devided into four parts:(1)MgGa2O4:Eu3+ synthesized by sol-gel process, (2)MgxZn1-xGa2O4:Eu3+ synthesized by sol-gel process, (3) MgIn2-xGaxO4:Eu3+ synthesized bt sol-gel and solid-state reaction processes, (4) MgGa2O4:Tb3+ synthesized by sol-gel process. By using Thermal Analysis, XRD, SEM, TEM and PL spectra, the characterization and photo-luminescent properties of prepared phosphors were well investigated.
　The experimental results demonstrated that the MgGa2O4:Eu3+ begins to crystallize around 600℃ and forms stable spinel phase in the range of 600-900℃.Under the excitation of 394 nm, the calcined powders revealed red-emitting at 612nm (5D07F2) , and the powders prepared at 900℃ exhibited the best luminescence intensity. The MgGa2O4:Eu3+ phosphor also shows concentration quenching at about 5~6mol%.
　With the addition of Zn into MgGa2O4 crystallite, the crystallinity of MgxZn1-xGa2O4:Eu3+ powders gradually increased, but the luminescence intensity decreased. Under any wavelength excitation, the MgxZn1-x Ga2O4:5%Eu3+ exhibited similar emission behavior as MgGa2O4 and also emitted red light at 612nm.
　For MgIn2-xGaxO4:Eu3+ crystallites, by using the sol-gel process or solid-stste reaction to stnthesize the phosphors,the spinel phase only could form at above 1300℃. Distinct from typical Eu3+-activated phosphors, the extraordinary excitation spectrum shows only intense f-f transition of Eu3+ ions around 467nm without a charge transfer band. Under excitation, the obtained powders emitted bright red light at 615nm. The sample MgIn1.8Ga0.2O4:5%Eu3+ was found to have the best emission intensity.
　In the last section, there existed energy transfer effect between host and activators, and resulted in the in-direct excitation of Tb3+ ions. Under the excitation of host absorption band at 251 nm, the MgGa2O4:Tb3+ revealed only green emission of Tb3+ ions at 550nm without any emission of host.
　Among the all synthesized phosphor powders in this study, the MgGa2O4:5% Eu3+ phosphor revealed excellent color performance which is almost near to NTSC red color, but the MgIn1.8Ga0.2O4:5%Eu3+ phosphor was found to have the best emission intensity.

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