本研究以奈米鋁金屬誘發結晶矽的方法，探討非晶矽薄膜緻密性與介面原生氧化層對薄膜之效應。
透過不同速率沉積的非晶矽薄膜，了解誘發不同非晶矽結晶的條件，並利用連續濺鍍方式去除介面原生氧化層，討論誘發後結晶型態、薄膜結構與薄膜電性。
薄膜沉積速率快速所製作的非晶矽薄膜，堆疊緻密性較低，導致薄膜結構鬆散，僅需較低能量就可打斷非晶矽鍵結，使鋁/矽開始互相擴散產生共晶，誘發出結晶矽。薄膜製作過程中，矽膜表面生長的原生氧化層，阻礙了鋁/矽相互擴散，需提高能量才能誘發。亦造成薄膜表面出現山丘(Hillocks)狀特徵形貌，誘發後鋁原子擴散不均與矽膜內鋁元素的濃度提高，使得載子移動率無法提高。使用連續濺鍍方式沉積薄膜，與低濃度鋁誘發結晶矽，得到鋁原子在矽膜中有一定的擴散深度，但不均勻擴散於矽膜之中，造成載子濃度過高。創新運用矽/鋁/矽三明治結構，發現鋁/矽薄膜厚度差異越大，誘發後薄膜產生的孔洞越少。鋁金屬誘發結晶矽研究中，證實鋁晶粒移動造成推擠，應力誘發矽結晶。並得到80.1cm2/Vs載子移動率與1.5×1018cm-3載子濃度，確實有效提升誘發後薄膜的性質。

This research use the method of nano aluminum induced crystallizations to discuss the effects of the compactness of amorphous silicon thin film and the interface native oxide layer on thin film.
Through different rates of deposition of amorphous silicon thin film to understand the crystallization of amorphous silicon induced by different conditions and using a continuous sputtering to remove native oxide interface for discussing the state of induced crystallization, thin film structure and electrical properties of thin films.
The amorphous silicon thin film which manufactured from high deposition rate makes the compactness low and causes the membrane structure loose only need the low energy can be possible to break the bonds of amorphous silicon. It promotes the diffusion mutually between Al/Si and then produces eutectic induces the crystallization silicon.
The native oxide layer which grows onto the a-Si thin film surface within the thin film manufacture process can be the hindrance of Al/Si inter-diffusion. It must enhance the energy while inducing and after causing the thin film surface presents the hillock dome-shaped characteristic appearance. It also makes the Al atomic diffusion to be uneven and high concentration in thin film. These cause to carrier mobility can’t be enhance.
From using a continuous sputtering and low Al concentration induces the crystallizations know that the Al atom has certain diffusion depth in Si thin film. But it usually doesn’t diffuse uniformly so that carrier mobility is excessively high.
By using the innovative Si/Al/Si sandwich structure, discovered the bigger thickness difference between Al/Si film is, the less voids produced after induces crystallizations are. In aluminum induced crystallization, we confirmed that the stress induced crystallization is because of the movement of aluminum grain cause to squeeze Si.
Finally I promote the thin film’s quality effectively which has carrier mobility 80.1cm2/Vs and concentration 1.5×1018cm-3.

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