自從2004年石墨烯(Graphene)被發現以來，是近幾年發展迅速的新興材料，由於其獨特的材料特性，石墨烯在機械性質、化學穩定度、熱傳導及高載子遷移率等方面都有相當出色的表現。
本研究利用酒精催化化學氣相沉積(Alcohol Catalytic Chemical Vapor Deposition , ACCVD)的方式在鎳箔上成長數層石墨烯，並探討通入碳源氣體的時間及快速降溫的效果，對於層數上的影響，並且利用溼蝕刻的方式，將數層石墨烯從鎳箔轉移到其他基板上，以利後續的元件製作。
實驗結果顯示，在最佳化的參數下，可以在鎳箔上成長出高覆蓋率及大面積(公分等級)的數層石墨烯。所製備之石墨烯壓力感測器，當薄膜材料受到壓力變化而變形時，其電阻值也會因而改變，電阻值與壓力呈線性的關係，並顯示不同成長時間的軟板薄膜材料之壓阻特性。

Graphene was discovered since 2004, Graphene material which was developed quickly in recent years, due to its unique material characteristics, graphene such as in mechanical properties, chemical stability, thermal conductivity and high carrier mobility has excellent performance.
In this study, using alcohol catalytic chemical vapor deposition method (ACCVD) to grow of few layer graphene on Ni foil, and the layers effects of carborn source time and rapid cooling will be discussed, and few layer graphene from Ni foil will be transferred to other substrate by wet etching method, in order to manufacture devices.
According to the results, in the optimization of parameters we can grow high coverage and large area (Centimeter scale). Fabrication of graphene thin-film pressure sensor when thin-film material is deformed by pressure changes, and therefore its resistance changed, showing a linear variation between the pressure and the resistance with piezoresistive characteristics of different Growth time flexible thin-film materials.

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