本篇論文期望利用薄膜式陽極氧化鋁模板製備出核殼結構單晶二硒化銅銦奈米柱的元件。期望改善塊材式陽極氧化鋁易碎良率低的問題，並且以低成本且低溫的電化學沉積技術，製備大面積的奈米柱陣列，利用奈米柱結構相較於平面式結構其高比表面積的優勢，配合核殼結構的改善，達到更佳的光電效果，爾後應用於各項光感測器的元件當中。
本篇論文成功製備出單晶二硒化銅銦奈米柱，以電鍍液pH1.7、電鍍電壓-1.2V為最佳參數，其製備完成之CIS晶粒大小為43.4nm，並且以(112)晶相為優選的單晶結構，所製備完成的CIS/n-Si二極體具備整流特性在2V為22.2mA/cm2，在-2V為-1.72x10-4 mA/cm2，再經過核殼結構的改善過後，在2V的電流提升到1270 mA/cm2。而最佳電鍍條件的CIS二極體，應用於光感測方面，其光響應度為1.57A/W，再經過核殼結構的改善後提升到12.76A/W，有確實改善光響應度且達到光感測的效果。

In recent years, one noticeable concept of automobile electronics is autopilot. LiDAR is the main technique of autopilot for sensing obstacles around the automobiles which consists of laser, photodetector, and images processing.
In this study, we utilize nanorod structure to fabricate a highly sensitive photodetector to achieve the multi-point detection like LiDAR. We realize the photodetector by electrochemical deposition assisted with a thin film anodic aluminum oxide(AAO) template made by anodic polarization process. The pore of the AAO template is further widen and smooth with the step down voltage anodization and KCl cathodic polarization. CuInSe2(CIS) is a prominent material for optical absorption, therefore we modulate the pH value of plating solution and plating voltage for manufacturing high quality single crystal CIS nanorod through the AAO template.
The best plating pH value and plating voltage for CIS nanorod in this study is 1.7 and -1.2V which results in a single crystal structure CIS nanorod with grain size 43.4nm after rapid thermal annealing(RTA) process.
CIS/n-silicon diode exhibits a tremendous rectifying characteristic of forward current density 22.2 mA/cm2 and reverse current density -1.72x10-4 mA/cm2. CIS/n-silicon diode photoresponsivity enhances from 1.57 to 12.76A/W with ITO core-shell structure.
This work demonstrates a low cost method to fabricate a nanorod structure photodetector with highly photosensitivity.

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