在本研究中，我們使用新型紅色磷光材料(5-fnapy)2Ir(acac) （R-72），以共蒸著的方式摻雜在發光層中，首先我們利用不同的電洞阻擋層材料BCP與BAlq3，設計出較合適的元件結構，得較好之發光效率，使元件發出紅色光。其次，在此結構下進行摻雜濃度及發光層厚度之調變，發現在低摻雜濃度時可製作出不受電壓影響之白光元件；而在高濃度摻雜下可可獲得紅光元件。另外，可發現在發光層較薄時可以得到較好元件特性。

　　最後，本研究比較在不同主發光體下之元件特性在摻雜的時候，發現R-72濃度的控制對所做出來的元件特性的影響是很大的。並且將R-72摻雜在CBP中，藉由調變摻雜濃度成功製作出CIE座標為(0.32,0.33)的近純白光與(0.65,0.35)的純紅光。另外，我們也試著將R-72摻雜在Alq3中，來觀察跟摻雜在CBP中的差異之處。

　　本研究可獲得之白光元件特性數據有：最大輝度(5080cd/ m2) 最大元件效率(1.21cd/A)；紅光元件特性數據有:最大輝度值（7240cd/m2）最大元件效率(1.78cd/A)，本研究可提供OLED應用一基礎之研究。

　In this reserch, we use the novel red phosphorescence dopant, (5-fnapy)2Ir(acac)（R-72）,to dopant to emission layer by co-dopant. The first, we design the superior structure to obtain the better luminescence efficiency and red emission by selecting different hole blacking layers. .The next, by adjusting the concentration and the thickness of the emission layer, we detect the white emission device independent on voltage can be attained in low concentration and red one but in high concentration. Beside, we obtain better characteristic device in thinner emission layer.

　Finally, the research show clearly the control of the R-72 dopant concentration is very important and sensitivity to characteristic device. We obtain the nearly pure white emission with CIE(0.32,0.33) and pure red emission with CIE(0.65,0.35) in the CBP:R-72 dopant system. We observe the difference between CBP and Alq3 in addition.

　The research attains the characteristic data, the maxima luminescence(5080cd/ m2) and maxima device efficiency(1.21cd/A),in white emission device and attains the maxima luminescence(7240cd/ m2) and maxima device efficiency(1.78cd/A) in red one.

參考文獻
[1] M. Pope, H. Kallmann, P. Magnante, J. Chem. Phys. 38 , 2042
(1963).
[2] W. Helfrich and W.G. Schneider, Phys. Rev. Lett. 14, 229
(1965).
[3] M. J. Flynn, J. Kanicki, A. Badano, and W. R. Eyler, Imaging & Therapeutic Technology, 19, 1653 (1999).
[4]J. H. Burroughes, D. D. C. Bradley, A. R. Brown, R. N. Marks, K. Mackay, R. H. Friend, P. L. Burns, and A. B. Holmes, Nature, 347, 539 (1990).
[5] J. H. Burroughes, D. D. C. Bradley, A. R. Brown, R. N. Marks,
K. Mackay, R. H. Friend, P. L. Burns, and A. B. Holmes, Nature,
347 ,539 (1990).
[6] Y. Ohmore, and K. YoShino, Jap. J. Appl. Phys. 30, L1938(1991).
[7] Y. Ohmore, and K. YoShino, Jap. J. Appl. Phys. 30, L1941(1991).
[8] G. Mueller, Electroluminescence I-Semiconductor and Semimetals Vol. 64, Academic Press, San Diego, CA USA, 209 (2000).
[9] N. J. Turro, Modern Molecular Photochemistry, University science books, Mill Valley, California, USA, 18 (1991).
[10]N. J. Turro, Modern Molecular Photochemistry, University science books, Mill Valley, California, USA, 18 (1991).
[11] C. W. Tang, S. A. VanSlyke, and C. H. Chen, J. Appl. Phys., 65, 3610 (1989).
[12] C.H. Chen, C.W. Tang, J. Shi, and K.P. Klubek, Thin Solid Films, 363, 327 (2000).
[13] Y. Hamada, H. Kanno, T. Tsujioka, H. Takahashi, and T. Usuki, Appl. Phys. Lett., 75, 1682 (1999).
[14] X. H. Zhang, B. J. Chen, X. Q. Lin, O. Y. Wong, C. S. Lee, H. L. Kwong, S. T. Lee, and S. K. Wu, Chem. Mater., 13, 1565 (2001).
[15] K. R. J. Thomas, J. T. Lin, Y. T. Tao, C. H. Chuen, Adv. Mater., 14, 822 (2002).
[16] C. H. Chen, J. Shi, Coord. Chem. Rev., 171, 161 (19989).
[17] C. H. Chen, C. W. Tang, Appl. Phys. Lett., 79, 3711 (2001).
[18] Y. Kijima, N. Asai, and S. I. Tamura, Jpn. J. Appl. Phys., 38, 5274 (1999).
[19] C. Hosokawa, H. Higashi, H. Nakamura, and T. Kusumoto, Appl. Phys. Lett., 67, 3853 (1995).
[20] Y. Li, M. K. Fung, Z. Xie, S. T. Lee, L. S. Hung, and J. Shi, Adv. Mater., 14, 1317 (2002).
[21] X. Y. Jiang, Z. L. Zhang, X. Y. Zheng, Y. Z. Wu, and S. H. Xu, Thin Solid Films, 401, 251 (2001).
[22] L. M. Leung, W. Y. Lo, S. K. So, K. M. Lee, and W. K. Choi, J. Am. Chem. Soc., 122, 5640 (2000).
[23] Y. Liu, J. Guo, J. Feng, H. Zhang, Y. Li, and Y. Wang, Appl. Phys. Lett., 78, 1200 (2001).
[24] Y. Kim, J. G. Lee, and S. Kim, Adv. Mater., 11, 1463 (1999).
[25] Z. Gao, C. S. Lee, I. Bello, S. T. Lee, R. M. Chen, T. Y. Luh, J. Shi and C. W. Tang, Appl. Phys. Lett., 74, 865 (1999).
[26] H. T. Shih, C. H. Lin, H. H. Shih, and C. H. Cheng, Adv. Mater., 14, 1409 (2002).
[27] C. C. Wu, Y. T. Lin, H. H. Chiang, T. Y. Cho, C. W. Chen, K. T. Wong, Y. L. Liao, G. H. Lee, and S. M. Peng, Appl. Phys. Lett., 81, 577 (2002).
[28] P. K. H. HO, J. S. Kim, J. H. Burroughes, H. Becker, S. F. Y. Li, T. M. Brown, F. Cacialli, and R. H. Friend, Nature, 404, 481 (2000).
[29] Y. Cao, I. D. Parker, G. Yu, C. Zhang, and A. J. Heeger, Nature, 397, 414 (1999).
[30] M. A. Baldo, D. F. O’Brien, Y. You, A. Shoustikov, S. Sibley, M. E. Thompson, and S. R. Forrest, Nature, 395, 151 (1998).
[31] D. F. O’Brien, M. A. Baldo, M. E. Thompson, and S. R. Forrest, Appl. Phys. Lett., 74, 442 (1999). 64
[32] M. A. Baldo, S. Lamansky, P. E. Burrows, M. E. Thompson, and S. R. Forrest, Appl. Phys. Lett., 75, 4 (1999).
[33] C. Adachi, M. A. Baldo, M. E. Thompson, and S. R. Forrest, J. Appl. Phys., 90, 5048 (2001).
[34] A. A. Shoustikov, Y. You, and M. E. Thompson, IEEE Journal on Selected Topics in Quantum Electronics. 4, 3, (1998).
[35]顧鴻壽著，光電有機電激發光顯示器，新文京開發出版社，台北，中華民國93年2月20日
[36]Hideyuki Murata, Charles D. Merritt, and Zakya H. Kafafi, IEEE Journal on Selected Topics in Quantum Electronics. Vol. 4, NO 1,119 (1998)